• 제목/요약/키워드: semiconductor

검색결과 10,261건 처리시간 0.038초

Integration Process and Reliability for $SrBi_2$ $Ta_2O_9$-based Ferroelectric Memories

  • Yang, B.;Lee, S.S.;Kang, Y.M.;Noh, K.H.;Hong, S.K.;Oh, S.H.;Kang, E.Y.;Lee, S.W.;Kim, J.G.;Shu, C.W.;Seong, J.W.;Lee, C.G.;Kang, N.S.;Park, Y.J.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권3호
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    • pp.141-157
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    • 2001
  • Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

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Three Dimensional Analysis of Device Cell Structure

  • Hyung-Ho ppark;Hyung-Mun Kim;Hee-Tae Lee;Sahn Nahm;Sang-Gi Kim;Joong-Whan Lee;Byong-Hwa Koak;Kyoung-Ik Cho;Young-Il Kang
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1993년도 제5회 학술발표회 논문개요집
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    • pp.89-90
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    • 1993
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Blazed $GxL^{TM}$ Device for Laser Dream Theater at the Aichi Expo 2005

  • Ito, Yasuyuki;Saruta, Kunihiko;Kasai, Hiroto;Nishida, Masato;Yamaguchi, Masanari;Yamashita, Keitaro;Taguchi, Ayumu;Oniki, Kazunao;Tamada, Hitoshi
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.556-559
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    • 2006
  • We successfully developed a high performance and highly reliable blazed GxL device with a high optical efficiency and a high contrast ratio. The device demonstrated superior resistance against a high power laser, which is suitable for a large-area laser projector. We operated the world's largest laser projection screen using this device at the 2005 World Exposition in Aichi, Japan, problem free.

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직접 확산 방식을 이용한 반도체 장비 통신 프로토콜 구현 (The Implementation of Communication Protocol for Semiconductor Equipments using Directed Diffusion)

  • 김두용;조현찬
    • 반도체디스플레이기술학회지
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    • 제12권2호
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    • pp.39-43
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    • 2013
  • The semiconductor equipments generate necessary data through communication networks for the effective manufacturing processes and automation of semiconductor equipments. For transferring data between semiconductor equipments and sending data to monitor equipments, several standards for communication protocols have been proposed. Communication networks in semiconductor manufacturing systems will transmit a lot of data traffic, which can be vulnerable in data delay and network failure. Therefore, it is required that data traffic need to be distributed. To accomplish this objective, we recommend the use of a redundant and valuable communication path which is constructed by a wireless sensor network. In this paper, the directed diffusion method for wireless sensor networking is suggested for networking semiconductor equipments. It is shown that how the directed diffusion is employed to connect semiconductor equipments. Also, we show how to implement the SECS of semiconductor equipments communication protocols based on the directed diffusion.

반도체 산업 노동자 암 발생 위험 논란과 과제 (Challenges and issues of cancer risk on workers in the semiconductor industry)

  • 박동욱
    • 한국산업보건학회지
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    • 제29권3호
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    • pp.278-288
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    • 2019
  • Objectives: The objectives of this study are to summary controversy over health risks among semiconductor workers, to review major cancer risk results conducted in semiconductor operation and to evaluate occupational health activities in Korea for controlling hazardous agents generated in semiconductor operations Methods: Major occupational health issues that has been social controversies among semiconductor workers since 2007 were reviewed through an extensive literature, report and article review. Results: Since a female semiconductor worker aged 22 died from leukemia in 2007, job-association of a number of former semiconductor workers with various types of cancer and rare diseases have been denied by the Korea Workers' Compensation and Welfare Service (KWCWS), but some of them were later awarded compensation as an occupational disease by the administrative court. Two epidemiologic cancer risk studies conducted in Korea found increased risks in leukemia and non-Hodgkin's lymphoma among semiconductor workers. Various legal occupational health activities taken in semiconductor industry were found to fail to assess a complex characteristics of semiconductor operations, such as drastic changes in chemical use, processes, and technology, multiple exposure. National compensation regulation also showed the limitation to evaluate job-association of semiconductor workers who had worked in semiconductor operation. Conclusions: National legal measures should be taken to improve several occupational health activities and duties for protecting workers. In addition, the KWCWS program should be revised so that all workers who meet minimal job or environment associations can be compensated.

Synthesis of High Purity Multiwalled and Singlewalled Carbon Nanotubes by Arc-discharge

  • Kim, Keun-Soo;Park, Young-Soo;An, Kay-Hyeok;Jeong, Hee-Jin;Kim, Won-Seok;Choi, Young-Chul;Lee, Seung-Mi;Moon, Jeong-Mi;Chung, Dong-Chul;Bae, Dong-Jae;Lim, Seong-Chu;Lee, Young-Seak;Lee, Young-Hee
    • Carbon letters
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    • 제1권2호
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    • pp.53-59
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    • 2000
  • The synthetic methods for high yield of multiwalled carbon nanotube (MWNT) and singlewalled carbon nanotube (SWNT) with high purity by arc discharge have been investigated. MWNTs were synthesized under different pressures of helium and the gas mixture of argon and hydrogen. Relatively high pressure of 300-400 torr was required for high yield MWNTs synthesis at low bias voltage of about 20 V and 55 A, whereas low pressure of about 100 torr was required for SWNTs. The introduction of hydrogen gases during the synthesis of MWNTs improved the yield and purity of the samples. The SWNTs were synthesized by the assistance of a small amount of mixture of transition metals, which played as a catalyst during the formation process. The purity and yield of SWNTs were higher at a lower pressure and enhanced by mixing more components of the transition metals.

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