• 한국전기전자재료학회논문지
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• 제19권2호
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• pp.153-157
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• 2006

In this work, the effects of plasma treatment on surface properties of semiconductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy (XPS) and contact angles, The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths, The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds(SiOx, x=3${\~}$4) increased, It is thought that semiconductive silicone rubber surfaces treated with plasma discharge led to an increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. However, the oxygen plama for 20 minute produces a damaged oxidized semiconductive silicone rubber layer, which acts as a weak layer producing a decrease in T-peel strength, These results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semiconductive silicone rubber.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.254-255
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• 2005

In this work, the effects of plasma treatment on surface properties of semi conductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, semiconductive silicone rubber surfaces treated with plasma discharge led to and increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. these results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semi conductive silicone rubber.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.623-624
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• 2007

This work examines the effects of swelling MI type HVDC cable oil on the semiconductive silicone rubber and silicone rubber as used in accessories for application on outdoor termination (EBA) slip on sleeve. The behavior of volume resistivity is monitored as a function of the amount of cable oil diffused into the material. Resistivities of semiconductive silicone samples up to the typical insulator range (${\sim}10^{10}{\Omega}-cm$) are observed as a consequence of swelling due to the presence of the diffused oil. The measured volume resistivities of the oil-impregnated semiconductive silicone rubber are compared to desired value as function of stress relief cone.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.147-148
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• 2005

In this work, recovery of semiconductive silicone rubber on oxygen plasma treatment was investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, surface methyl groups is removed and an oxidized layer containing Si atoms bound to 3 or 4 oxygens appears. The surface is later covered by a very thin layer due to migration of low-molecular-weight components from the bulk, resulting in decreasing the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber these results are probably due to reorientation of polar groups or migration of low-molecular-weight.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.696-701
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• 2005

This paper was investigated the changes of surface properties of high-temperature-vulcanized (HTV) semiconductive silicone rubber due to oxygen plasma discharge. The modifications produced on the silicone rubber surface by oxygen plasma were accessed using Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), contact angle and Surface Roughness Tester. The results of the chemical analysis Showed that C-H bonds were broken due to plasma discharge and Silica-like bonds (SiOx, x=$3\~4$) increased. It is thought that the above changes lead to the increase of surface energy of high-temperature-vulcanized (HTV) semiconductive silicone rubber also, Surface roughness was increased with cleavage of side-chains and oxidation process, it confirmed change as the SEM. The micromorphology of surface and hydrophobicity due to plasma discharge based on our results were discussed.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.450-456
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• 2005

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.78-81
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• 2004

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. Surface structure and adhesion of semiconductive silicon rubber by surface asperity was obtained from SEM and T-peel test. In addition, ac breakdown test was carried out for elucidating the change of electrical property by roughness treatment. From the results, Adhesive strength of semiconductive-insulation interface was increased with surface asperity. Dielectric breakdown strength by surface asperity decreased than initial Specimen, but increased from Sand Paper #1200. According to the adhesional strength data unevenness and void formed on the silicone rubber interface expand the surface area and result in improvement of adhesion. Before treatment Sand Paper #1200, dielectric breakdown strength was decreased by unevenness and void which are causing to have electric field mitigation small. After the treatment, the effect of adhesion increased dielectric breakdown strength. It is found that ac dielectric breakdown strength was increased with improving the adhesion between the semiconductive and insulating interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.25-28
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• 2005

This paper was investigated the changes of surface properties of high-temperature-vulcanized(HTV) semiconductive silicone rubber due to oxygen plasma discharge. The modifications produced on the silicone surface by oxygen plasma were accessed using x-ray photoelectron spectroscopy(XPS), contact angle and Scanning Electron Microscope(SEM). The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds (SiOx. x=3~4) increased. It is thought that the above changes lead to the increase of surface energy of high-temperature-vulcanized(HTV) semiconductive silicone rubber. The micromorphology of surface and hydrophobicity due to plasma discharge based on our results were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 방전 플라즈마 유기절연재료 초전도 자성체연구회
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• pp.11-14
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• 2004

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and AFM. Adhesion was obtained from T-peel tests of semiconductive layer having different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the the creation of O-H and C=O. It is observed that adhesion performance was determined by not surface energy but roughness level of silicone surface. It is found that ac dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.16-20
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• 2006

In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.