• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.211-211
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• 2011

Nanostructures, with a diversity of shapes, built on substrates have been developed within many research areas. Lithography is one powerful, but complex, technique to make structures at the nanometer scale, such as platinum nanowires for studying CO catalytic reactions [1], or aluminum nanodisks for studying the plasmon effect [2]. In this work, we approach a facile method to construct nanostructures using noble metals on a titania thin film by using self-assembled structures as a pattern. Here, a large-scale silica monolayer is transferred to the titania thin film substrates using a Langmuir-Blodgett trough, followed by the deposition of a thin transition metal layer. Owing to the hexagonal close-packed structure of the silica monolayer, we would obtain a metal nanostructure that includes separated metallic triangles (islands) after removing the patterning silica beads. This nanostructure can be employed to investigate the role of metal-oxide interfaces in CO catalytic reactions by changing the patterning silica particles with different sizes or by replacing the oxide support. The morphology and chemical composition of the structure can be characterized by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. In addition, we modify these islands to a connected island structure by reducing the silica size of the patterning monolayer, which is utilized to generating hot electron flow based on the localized surface plasmon resonance effect of the metal nanostructures.

• Journal of the Korean Chemical Society
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• v.59 no.1
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• pp.36-44
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• 2015

This article describes synthesis and electrochemical properties of layer-by-layer self-assembled multilayer film composed of polyaniline (PANi), graphene oxide (GO) and phytic acid (PA), whereby the GO was electrochemically reduced to ERGO, resulting in $(PANi/ERGO/PANi/PA)_{10}$ film electrode. Especially, we examined the possibility to improve the volumetric capacitive property of $(PANi/ERGO)_{20}$ film electrode via combining a spherical hexakisphosphate PA nanoparticle into the multilayer film that would dope PANi properly and also increase the porosity and surface area of the electrode. The electrochemical performances of the multilayer film electrodes were investigated using a three-electrode configuration in 1 M $H_2SO_4$ electrolyte. As a result, the $(PANi/ERGO)_{20}$ electrode showed the volumetric capacitance of $666F/cm^3$ at a current density of $1A/cm^3$, which was improved to the volumetric capacitance of $769F/cm^3$ for the $(PANi/ERGO/PANi/PA)_{10}$ electrode, in addition to the cycling stability maintained to 79.3% of initial capacitance after 1000 cycles. Thus, the electrochemical characteristics of the $(PANi/ERGO)_{20}$ electrode, which was densely packed by ${\pi}-{\pi}$ stacking between the electron-rich conjugate components, could have been improved through structural modification of the multilayer film via combining a spherical hexakisphosphate PA nanoparticle into the multilayer film.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.25-28
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• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.

• Applied Microscopy
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• v.36 no.spc1
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• pp.35-40
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• 2006

Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) techniques, The structure and the thermal stability of QDs have been studied by high resolution electron microscopy with in-situ heating experiment capability, The ALE and MBE QDs were found to form a hemispherical structure with side facets in the early stage of growth, Upon capping by GaAs layer, however, the apex of QDs changed to a flat one. The ALE QDs have larger size and more regular shape than those of MBE QDs. The QDs collapse due to elevated temperature was observed directly in atomic scale, In situ heating experiment within TEM revealed that the uncapped QDs remained stable up to $580^{\circ}C$, However, at temperature above $600^{\circ}C$, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs, The density of the QDs decreased abruptly by this collapse and most of them disappeared at above $600^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.213-218
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• 2001

Presented are the STM images of self-assembled monolayer of 2-mercaptoethanol on Au(111). Striped structures of ($6{\times}3_{\frac{1}{2}}$), ($5{\times}3_{\frac{1}{2}}$), ($4{\times}3_{\frac{1}{2}}$) and compact-($5{\times}3_{\frac{1}{2}}$) were observed after annealing at $80^{\circ}C.$ Analysis of the ordered structures revealed that the basic fundamental units of the ordered structures were three crystallographically non-equivalent ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies, and that the way of combination of the assemblies produced the four different structures. The($6{\times}3_{\frac{1}{2}}$) structure ( $\theta$ = 0.33) was composed of one ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$)$R30^{\circ}$ assembly, while the ($5{\times}3_{\frac{1}{2}}$) ( $\theta$ = 0.30) and ($4{\times}3_{\frac{1}{2}}$) ( $\theta$ = 0.38) structures were consisted of two ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies, separated by 5a and 4a, respectively. Furthermore, the compact-(5X 3½) structure ( $\theta$ = 0.50) was obtained by overlapping three ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies. In spite of the diversity in the adsorption structures, all the adsorption sites of 2-mercaptoethanol were fundamentally identical. On the other hand, the unannealed primitive SAM of 2-mercaptoethanol was characterized by two observations: a short-range order keeping the adsorbed molecules at approximately $3_{\frac{1}{2}}$ a and the small domains of the striped structures supporting that the observed surface structures on the annealed surface were the extension of the primitive layer of 2-mercaptoethanol. Comparing these observations with the already published structures of ethanthiol, it was concluded that the interaction between the hydroxyl groups of 2-mercaptoethanol might play a significant role in the adsorption step of 2-mercaptoethanol on Au(111) to organize the adsorption structures different from those of ethanthiol.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.611-611
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• 2013

In this study, iron oxide nanoclusters layer (Nc) was prepared onto functionalized silicon substrate by wet method. The amine-terminated SAM fabricated on silicon substrate (APTMS/Si) was carried out by UV-treatment and immersed into the FeCl3/HCl aqueous solution. Then, Nc were immobilized onto oxidized SAM silicon substrate (SAMs/Si) through electrostatic interaction between cationic Nc and anionic SAMs/Si. This catalytic layer (Nc/SAMs/Si) was used to grow carbon nanotubes (CNTs). The characterization results clearly show that the well-graphitized CNTs were synthesized by using functionalized silicon substrate as a template having appropriate density of catalyst. These consequences show that SAM containing template is important to achieve the effective layer of catalyst to synthesize CNTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.116-116
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• 2004

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.127-127
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• 2008

The replica of highly ordered nano-sphere array patterns were fabricated using hot embossing method. The polymer replica was coated with silcon dioxide layer and self-assembled monolayer. Using UV nanoimprint lithography with the template, highly ordered nano-sphere array patterns were clearly fabricated on curved substrate.

• The Journal of the Acoustical Society of Korea
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• v.23 no.1
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• pp.1-7
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• 2004

We developed SH-SAW sensors to detect protein molecules in liquid solutions applying a particular antibody thin film on the delay line of transverse SAW devices. The antibody investigated was human-immune-globulin G (HigG) to hold the antigens (anti-HigG) in the protein solution. We fabricated the sensor generating 100 MHz with the piezoelectric single crystal LiTaO₃. We measured the frequency change of the sensor by adding the anti-body concentration on SAM (self assembled monolayer) deposited on the Au layer. The sensor showed stable response to the mass loading effects of the anti-HigG molecules with the sensitivity up to 10.8 ng/ml/Hz at noise level 400 Hz below.