• Journal of Microbiology and Biotechnology
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• v.16 no.1
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• pp.141-144
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• 2006

An antibody layer was fabricated to detect Escherichia coli O157:H7. The micropattern of 16-mercaptohexadecanoic acid (16-MHDA) as alkylthiolate was formed on the gold surface by using the PDMS stamp with microcontact printing $({\mu}CP)$ techniques. In order to form antibody patterns on the template, protein G was chemically bound to the 16-MHDA patterns, and antibody was adsorbed on a self-assembled protein G layer. The formation of the 16-MHDA micropattern, self-assembled protein G layer and antibody pattern on Au substrate was confirmed by surface plasmon resonance (SPR) spectroscopy. Finally, the micropatterning method was applied to fabricate the antibody probe for detection of E. coli O157:H7, and monitoring of antigen by using this probe was successfully achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.314-315
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• 2008

We have studied a property change of organic light-emitting diodes (OLED)s due to a surface reformation of indium-tin-oxide(ITO) substrate. An ITO is widely used as a transparent electrode in light-emitting diodes, and the OLEDs device performance is sensitive to the surface properties of the ITO. The ITO surface reformation could reduce the Schottky barrier at the ITO/organic interface and increase the adhesion of the organic layer onto the electrode. We have studied the characteristics of OLEDs with a treatment by a wet processing of the ITO substrate. The self-assembled monolayer(SAM) was used for wet processing. The characteristics of OLEDs were improved by SAM treatment of an ITO in this work. The OLEDs with a structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using seneral characterization techniques. Self-assembled monolayer introduced at the anode/organic interface gave an improvement in turn-on voltage, luminance and external quantum efficiency compared to the device without the SAM layer. SAM-treatment time of the ITO substrate was made to be 0/10/15/20/25min. The current efficiency of the device with 15min. treated SAM layer was increased by 3 times and the external quantum efficiency by 2.6 times.

• Journal of Powder Materials
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• v.30 no.2
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• pp.156-168
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• 2023

The semiconductor industry faces physical limitations due to its top-down manufacturing processes. High cost of EUV equipment, time loss during tens or hundreds of photolithography steps, overlay, etch process errors, and contamination issues owing to photolithography still exist and may become more serious with the miniaturization of semiconductor devices. Therefore, a bottom-up approach is required to overcome these issues. The key technology that enables bottom-up semiconductor manufacturing is area-selective atomic layer deposition (ASALD). Here, various ASALD processes for elemental metals, such as Co, Cu, Ir, Ni, Pt, and Ru, are reviewed. Surface treatments using chemical species, such as self-assembled monolayers and small-molecule inhibitors, to control the hydrophilicity of the surface have been introduced. Finally, we discuss the future applications of metal ASALD processes.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.5
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• pp.362-368
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• 2021

A homeotropic liquid crystal (LC) alignment state on rubbed fluorinated self-assembled monolayers (FSAMs) is described according to alkyl chain length. A simple procedure, gas-phase method, for the preparation of FSAM was used. The average optical transmittance in the visible light range of FSAMs were 76.63% to 78.21%, which were superior to the conventional polyimide layer having a transmittance of 75.89%. In addition, the excellent homeotropic LC alignment characteristics of FSAMs were observed through pretilt angle measurement and polarized optical microscope images. By measuring the contact angles and the surface energies of FSAMs, it was confirmed that pretilt angles of LC molecules increased according to the alkyl chain length. High optical transparency and uniform homeotropic LC alignment characteristics of FSAMs showed the possibility of FSAMs as an LC alignment layers.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.569-574
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• 2014

Inverted bulk hetero-junction polymer solar cells (iPSC) composed of P3HT/PC61BM blends on the ZnO modified with benzoic acid derivatives-based self-assembled monolayers (SAM) are fabricated. Compared with the device using the pristine ZnO, the devices with ZnO surface modified SAMs derived from benzoic acid such as 4-(diphenylamino)benzoic acid (DPA-BA) and 4-(9H-carbazol-9-yl)benzoic acid (Cz-BA) as an electron transporting layer show improved the performances. It is mainly attributed to the favorable interface dipole at the interface between ZnO and the active layer, the eective passivation of the ZnO surface traps, decrease of the work function and facilitating transport of electron from PCBM to ITO electrode. The power conversion eciency (PCE) of iPSCs based on DPA-BA and Cz-BA treated ZnO reaches 2.78 and 2.88%, respectively, while the PCE of the device based on untreated ZnO is 2.49%. The open circuit voltage values ($V_{oc}$) of the devices with bare ZnO and SAM treated ZnO are not much different. Whereas, higher the fill factor (FF) and lower the series resistance ($R_s$) are obtained in the devices with SAMs modification.

• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2195-2196
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• 2009

• Macromolecular Research
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• v.13 no.3
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• pp.265-272
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• 2005

Polyelectrolyte membranes for humidity-sensing were fabricated using a layer-by-layer adsorption process based on the spontaneous self-assembly of alternating layers of cationic and anionic polymers on a silanized ITO patterned glass substrate. The substrate is dipped successively into dilute solutions of a polyanion and a polycation. The homopolymers and copoymers of diallyldimethylammonium chloride (DDA), allylamine hydrochloride (AA), 2-[(methacryloyloxy)ethyl]trimethyl ammonium chloride (METAC) and vinylbenzyl tributyl phosphonium chloride(VTBPC) were used as the polycations. In this experiment, it was found that the resistance varied according to the chemical structure of the polycation. The resistance varied from $10^7$ to $10^5$ $\Omega$, as the humidity was increased from 60 (relative humidity) to $95\%$RH, which is the range of RH values required for a dew sensor operating at high humidity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1044-1045
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• 2004

In this work, the characteristics of organic thin film transistors (OTFTs) with self-assembled monolayers (SAMs) on polymeric gate insulator have been investigated. The SAMs were formed using atomic layer deposition (ALD) method onto gate insulator. Upon the investigations, it was observed that SAMs modify the wettability of polymeric insulator and influence the growth of subsequent organic semiconductor, and thereby, electric conductivity and roughness of the pentacene film are improved.