• Korean Journal of Materials Research
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• v.32 no.8
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• pp.333-338
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• 2022

In this work, we developed silver nanowires and a silicon based Schottky junction and demonstrated ultrafast broadband photosensing behavior. The current device had a response speed that was ultrafast, with a rising time of 36 ㎲ and a falling time of 382 ㎲, and it had a high level of repeatability across a broad spectrum of wavelengths (λ = 365 to 940 nm). Furthermore, it exhibited excellent responsivity of 60 mA/W and a significant detectivity of 3.5 × 10¹² Jones at a λ = 940 nm with an intensity of 0.2 mW cm^-2 under zero bias operating voltage, which reflects a boost of 50 %, by using the AC PV effect. This excellent broadband performance was caused by the photon-induced alternative photocurrent effect, which changed the way the optoelectronics work. This innovative approach will open a second door to the potential design of a broadband ultrafast device for use in cutting-edge optoelectronics.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.281-285
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• 2011

We investigated the effects of tunneling current on scanning tunneling microscopy (STM) images of 1-octanethiol (OT) and 1-decanethiol (DT) self-assembled monolayers (SAMs). At a low tunneling current, the domain boundaries and ordered alkanethiol molecules were clearly resolved. As the tunneling current was increased at a constant bias voltage, however, the STM images showed disordered structures of the OT and DT SAMs. As the tunneling current was reduced back to low values, the ordered structures of the alkanethiol molecules reappeared. The reversibility of the process suggests that the sulfur head groups did not rearrange under any of the tunneling current conditions. On the basis of our observations, which are inconsistent with the standard model for STM imaging of molecules on metal surfaces, we consider the STM imaging mechanism in terms of a two-region tunneling junction model.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.151-158
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• 1997

Nitrogen incorporated diamond-like carbon films were deposited by r.f. glow discharge of mixtures of benzene and ammonia gases. Mechanical properties, composition and atomic bond structure were investigated when the fraction of ammonia increases from 0 to 0.79 and the negative self bias voltage of cathode from 100 to 900 V. Both the residual compressive stress and the hardness decrease from 1.7 to 1.0 GPa and from 2750Kgf/$\textrm{mm}^2$ to 1700Kgf/$\textrm{mm}^2$, respectively. In addition to hydrogen, triply bonded nitrogens also play a role of teminal sites of the three dimensional atomic bond network. By considering the hydrogen concentration and the nitrogen bond characteristics, it can be shown that the mechanical properties of the films are determined by the content of three dimensional inter-links of $sp^2$ clusters. Although the mechanical properties are affected by the nitrogen addition, its depedence on the negative bias voltage is qualitatively identical to that of pure diamond-like carbon films.

• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.1-5
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• 2003

Plasma generator based on non-self-sustained low-pressure arc discharge has been examined as a tool for deposition of highly-adhesive hydrogenated amorphous diamond-like carbon(DLC) films. Since the discharge is stable in wide range of gas pressures and currents, this plasma source makes possible to realize both plasma-immersion ion implantation(PIII) and plasma-immersion ion deposition(PIID) in a unified vacuum cycle. The plasma parameters were measured as functions of discharge current. Discharge and substrate bias voltage parameters have been determined for the PIII and PIID modes. For PIID it has been demonstrated that hard and well-adherent DLC coating are produced at 200-500 eV energies per deposited carbon atom. The growth rates of DLC films in this case are about 200-300 nm/h. It was also shown that short(∼60$\mu\textrm{s}$) high-voltage(> 1kV) substrate bias pulses are the most favorable for achieving high hardness and good adhesion of DLC, as well as for reducing of residual intrinsic stress are.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.550-555
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• 2001

A diamond-like carbon(DLC) films were deposited on the borosilicate glass substrate by radio frequency plasma enhanced chemical deposition(rf-PECVD). The $methane(CH_4)-hydrogen(H_2)$ gas mixture was used as precursor gas. The morphologies, the structure and the optical properties of the DLC films were investigated by SEM, Raman and UV spectrometer. The deposition rate was slightly increased with the hydrogen concentration in the gas mixture and it maintained constant at over 25 sccm of the gas flow rate. The optical band gap calculated by UV spectra decreased with increase of deposition time and DC self bias, but that were not effected by hydrogen content. Most effective parameter on the transmittance of film was bias voltage, especially in the range of ultra violet and visible light.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1730-1733
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• 2004

Device miniaturization and high integrated circuit design is of major interest for the development of electronic devices. Various studies have been conducted to develop new material and processing technique[1]. Negative Differential Resistance(NDR) is the defining behavior in several electronic components, including the Esaki diode and most notably, resonant tunneling diodes(RTD)[2]. We made a comparison of electrical properties between 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene and 4-[2,5-dimethoxy-4-(p henylethynyl)phenyl]ethynylphenylethanethioate, which have been well known as a conducting molecule having possible application to molecular level NDR devices. As a result, we measured current-voltage curves using Scanning Tunneling microscopy(STM), I-V curves also showed several current peaks between negative and positive bias region.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.20-24
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• 1998

Thin films of diamond-like carbon(DLC) can be successfully deposited by using a magnetron plasma chemical vapor deposition (CVD) method with an rf(13.56 MHz) plasma of $C_dH_8$. Plasma characteristics are analyzed as a function of the magnetic field. As the magnetic field increases, both electron temperature ($T_e$) and density ($n_e$)increase, but the negative dc self-bias voltage (-$V_{ab}$) decreases, irrespective of gas pressures in the range of 1~7 mTorr. High deposition rates have been obtained even at low gas pressures, which may be attributed to the increased mean free path of electrons in the magentron plasma. Effects of rf power and additive gas on the structural properties of DLC films aer also examined by using various technique namely, TED(transmissio electron diffraction) microanalysis, FTIR, and Raman spectroscopies.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.261-263
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• 1993

The effects of the magnetic field and gas pressure on the etching characteristics were investigated in the axial magnetic field enhanced RIE system. This system has many advantages compared with the conventional RIE system ; the capability of operating at low pressure, low self-bias voltage, high electron density and high etch rate in the low pressure, but also has disadvantages such as the nonconformity of plasma density which intensifies as the magnitude of magnetic field increases. To overcome this problem we made some grooved anode and tried to find the optimal pressure and B-field strength.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.227-231
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• 2020

Silver nanowire random networks are promising candidates for replacing indium tin oxide (ITO) as transparent and conductive electrodes. They can also be used as transparent heating films with self-cleaning and defogging properties. By virtue of the Joule heating effect, silver nanowire random networks can be heated when voltage bias is applied; however, they are unsuitable for long-term use. In this work, we study the Joule heating of silver nanowire random networks embedded in polymers. Silver nanowire random networks embedded in polymers exhibit breakdown under the application of electric current. Their surface morphological changes indicate that nanoparticle formation may be the main cause of this electrical breakdown. Numerical analyses are used to investigate the temperatures of the silver nanowire and substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.309-314
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• 1999

The magnetized helical resonator plasma etcher has been built. Electron density and temperature were measured as functions of rf source power, axial magnetic field, and pressure. The results show electron density increases as the magnetic field increases and reached $2\times1012cm^{-3}$,/TEX>. The oxide etch rate and selectivity to polysilicon were investigated as the above mentioned conditions and self-bias voltage. We can obtain the much improved oxide etch selectivity to polysilicon (60 : 1) by applying the external axial weak magnetic field in magnetized helical resonator plasma etcher.