• 대한전자공학회논문지SD
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• 제37권3호
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• pp.27-33
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• 2000

선택성을 향상시키기 위해서 BPSG(Borophosphosilicate glass) 위에 형성한 TiN 패턴을 로(furnace) 열처리와 질소 플라즈마 처리를 한 후 유기 화학 기상 증착법(MOCVD； Metal Organic Chemical Vapor Deposition)으로 구리 박막을 증착하였다. 먼저 650℃∼750℃에서 열처리한 후 150℃에서 구리 박막을 증착시켰을 때 750℃에서 열처리한 경우 TiN 표면 위에만 선택적으로 구리 증착이 일어났다. 질소 플라즈마 처리를 한 경우도 마찬가지로 BPSG 위에 구리 핵 형성이 억제됨을 알 수 있었다. 플라즈마 처리 온도를 증가시킬수록 BPSG 위의 구리 핵 형성이 더 효과적으로 억제되었다. 열처리와 플라즈마 처리 후 증착된 기판 표면을 TOF-SIMS(Time-of-Flight Secondary Ion Mass Spectrometry)로 분석하였을 때 플라즈마 처리가 BPSG 표면의 구리 증착 작용기인 0-H(hydroxyl)기를 제거하여 구리의 선택성이 향상되었다고 해석하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.91-95
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• 1998

Selectivity of SiC deposition on a Si substrate partially covered with a masking material was investigated by introducing HCl gas into hexamethyldisilane/H2 gas system during the deposition. the schedule of the precursor and HCl gas flows was modified so that the selectivity of SiC deposition between a Si substrate and a mask material should be improved. It was confirmed that the selectivity of SiC deposition was improved by introducing HCl gas. Also, the pulse gas flow technique was effective to enhance the selectivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제28회 학술발표회 초록집
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• pp.51-51
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• 2005

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.18-18
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• 1993

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.17.2-17.2
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• 2006

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.105.1-105
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• 1998

• Korean Membrane Journal
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• 제3권1호
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• pp.69-74
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• 2001

Films of TiO$_2$/SiO$_2$ were deposited on the inner surface of the porous glass support tubes by decomposition of tetraisopropyl titanate (TIPT) and tetraethyl orthosilicate (TEOS) at atmospheric pressure. Dense and hydrogen -permselective membranes were formed at 400-600$\^{C}$. The permeation rates of H$_2$ through the membrane at 600$\^{C}$ were 0.2-0.4 ㎤(STP)/min-㎠ atm and H$_2$:N$_2$permeation ratios were above 1000. The permeation properties of the membranes were investigated at various deposition temperatures and TIPT/TEOS concentrations. Decomposition of TIPT alone at temperatures above 400$\^{C}$ produced porous crystalline TiO$_2$ films and they were not H7-selective. Decomposition of TEOS produced H$_2$-permeable SiO$_2$ films at 400-600$\^{C}$ but film deposition rate was very low. Addition of TIFT to the TEOS stream significantly accelerated the deposition rate and produced highly H$_2$-selective films. Increasing the TIPT/TEOS concentration ratio increased the deposition rate. The TiO$_2$/SiO$_2$ membranes formed at 600 $\^{C}$ have the permeation properties comparable to those of SiO$_2$ membranes produced from TEOS.

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.61-65
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• 2012

In this study, for use of carbon nanotubes (CNTs) as a cold cathode of x-ray tubes, we examine the effects of selective growth of CNTs on their field emission properties and long-term stability. The selective growth of CNTs was performed by selectively etching the catalyst layer which was used for CNTs' nucleation. CNTs were grown on conical-type tungsten substrates using an inductively-coupled plasma chemical vapor deposition system. For all the grown CNTs, their morphologies and microstructures were analyzed by field-emission scanning electron microscope and Raman spectroscopy. The electron-emission properties of CNTs and the long-term stability of emission currents were measured and characterized according to the CNTs' growth position on the substrate.

• 한국기계가공학회지
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• 제20권8호
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• pp.42-51
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• 2021

Investigations of process parameters are essential when fabricating high-quality parts using additive manufacturing. This study investigates the change in the mechanical characteristics of a SUS316L specimen fabricated using selective laser melting based on the energy density and bead overlap ratio. The SUS316L powder particles were spherical and 35 ㎛ in size. Single-bead and hexahedral shape deposition experiments were performed sequentially. A single bead experiment was performed to obtain the bead overlap ratios for different laser parameters utilizing laser power and scan speed as experimental parameters. A hexahedral shape deposition experiment was also performed to observe the difference in mechanical properties, such as the internal porosity, surface roughness, and hardness, based on the energy density and bead overlap ratio of the three-dimensional printed part. Laser power, scan speed, overlap ratio, and layer thickness were chosen as parameters for the hexahedral shape deposition experiment. Accordingly, the energy density applied for three-dimensional printing, and the experimental parameters were calculated, and the energy density and bead overlap ratio for fabricating parts with good properties have been suggested.

• 한국재료학회지
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• 제31권12호
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• pp.727-731
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• 2021

In this study, we have investigated a selective emitter using a UV laser on BBr₃ diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr₃ diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al₂O₃ deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.