• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.187-188
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• 2015

• ETRI Journal
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• v.10 no.2
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• pp.63-69
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• 1988

SIMS(Secondary Ion Mass Spectrometry) 분석 데이터의 정량화 방법으로 이온주입에 의한 실험적 접근법과 LTE(Local Thermal Equilibrium) 모델을 사용한 준이론적 접근법 2가지가 주로 논의되고 있다. 본 고에서는 LTE 모델을 사용, SIMS data를 정량화하는 방법에 대하여 기술하였으며 아울러 BASIC language로 된 간단한 LTE 프로그램을 제시하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.93-93
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• 2006

• Polymer Science and Technology
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• v.24 no.5
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• pp.528-534
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• 2013

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.113-114
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• 2013

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) imaging is a powerful technique for producing chemical images of small biomolecules (ex. metabolites, lipids, peptides) "as received" because of its high molecular specificity, high surface sensitivity, and submicron spatial resolution. In addition, matrix-assisted laser desorption and ionization time-of-flight (MALDI-TOF) imaging is an essential technique for producing chemical images of large biomolecules (ex. genes and proteins). For this talk, we will show that label-free mass imaging technique can be a platform technology for biomedical studies such as early detection/diagnostics, accurate histologic diagnosis, prediction of clinical outcome, stem cell therapy, biosensors, nanomedicine and drug screening [1-7].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.27-33
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• 2000

The selective chemical vapor deposition techniques for Cu metallization were studied. For enhancing the selectivity, furnace annealing and N$_{2}$ plasma were treated on patterned TiN/BPSG prior to the copper deposition. As a result, Cu did not deposited lead to suppressing the nucleation on BPSG singificantly. With the increasement the plasma treatment temperature, copper nucleation on BPSG was suppressed mote effectively, From TOF-SIMS(Time-of-Flight Secondary ion Mass Spectrometry), it is considered that annealing and N$_{2}$ plasma treatment remove hydroxyl(0-H) group so that eliminating the nucleation site for copper precursor enhance the selectivity.

• Nuclear Engineering and Technology
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• v.44 no.5
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• pp.491-500
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• 2012

The dissimilar metal joints welded between Ni-based alloy, Alloy 690 and low alloy steel, A533 Gr. B with Alloy 152 filler metal were characterized by using optical microscope, scanning electron microscope, transmission electron microscope, secondary ion mass spectrometry and 3-dimensional atom probe tomography. It was found that in the weld root region, the weld was divided into several regions including unmixed zone in Ni-base alloy, fusion boundary, and heat-affected zone in the low alloy steel. The result of nanostructural and nanochemical analyses in this study showed the non-homogeneous distribution of elements with higher Fe but lower Mn, Ni and Cr in A533 Gr. B compared with Alloy 152, and the precipitation of carbides near the fusion boundary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.951-954
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• 2004

본 논문에서는 DLC(Diamond-like Carbon) 박막과 기판 사이에 금속층을 포함하는 DLC 박막의 기계적 특성을 분석하였다. 금속층은 sputtering법을 사용하고, DLC 박막은 PECVD법을 사용하여 각각 중착하였다. 티타늄(Ti), 니켄(Ni), 크롬(Cr)을 각 중간 금속층으로 사용한 후 DLC 박막과 실리콘(Si) 기판 간의 기계적 특성을 분석하였다. 각 막의 두께는 FE-SEM으로 확인하였고, DLC 박막의 구조 평가는 Raman spectrometer를 사용하여 분석하였으며, 각 금속층과 DLC 박막의 표면 상태는 AFM을 이용하여 확인하였다. XRD 분석을 통하여 박막의 격자분석을 하였고, SIMS(secondary ion mass spectrometry) 분석을 통하여 DLC 박막의 depth Profile을 확인하였다.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3121-3125
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• 2023

Neutron conversion detectors that use ¹⁰B-enriched boron carbide are feasible alternatives to ³He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B₄C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the ¹⁰B-enriched B₄C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.