• Journal of Microbiology and Biotechnology
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• v.18 no.4
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• pp.663-669
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• 2008

The solvent-tolerant bacterium Enterobacter sp. VKGH12 is capable of utilizing n-butanol and contains an $NAD^+$-dependent n-butanol dehydrogenase (BDH). The BDH from n-butanol-grown Enterobacter sp. was purified from a cell-free extract (soluble fraction) to near homogeneity using a 3-step procedure. The BDH was purified 15.37-fold with a recovery of only 10.51, and the molecular mass estimated to be 38 kDa. The apparent Michaelis-Menten constant ($K_m$) for the BDH was found to be 4 mM with respect to n-butanol. The BDH also had a broad range of substrate specificity, including primary alcohols, secondary alcohols, and aromatic alcohols, and exhibited an optimal activity at pH 9.0 and $40^{\circ}C$. Among the metal ions studied, $Mg^{2+}$ and $Mn^{2+}$ had no effect, whereas $Cu^{2+},\;Zn^{2+}$, and $Fe^{2+}$ at 1 mM completely inhibited the BDH activity. The BDH activity was not inhibited by PMSF, suggesting that serine is not involved in the catalytic site. The known metal ion chelator EDTA had no effect on the BDH activity. Thus, in addition to its physiological significance, some features of the enzyme, such as its activity at an alkaline pH and broad range of substrate specificity, including primary and secondary alcohols, are attractive for application to the enzymatic conversion of alcohols.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.46 no.2
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• pp.1-7
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• 2014

Causticizing calcium carbonate (CCC) is produced as a by-product in the causticization step of the kraft pulping process. It is often calcined in a rotary lime kiln after being dewatered and reused in the causticizing process. But for the China mill, the conventional recycled way is difficult because the CCC is mainly obtained from non-wood pulping materials, which higher silicon content led to serious silicon obstacle. So it is often discarded as solid waste or used in landfill after dewatering and secondary pollution is brought. In order to prevent its secondary pollution, recent years, the CCC is used as a filler in China papermaking industry. In mill trials, the CCC can be used to replace an amount of precipitated calcium carbonate (PCC). Unfortunately, the application scope and dosage of CCC have been limited due to its lower sizing efficiency than PCC. In this study, the reason for the lower sizing efficiency of alkyl ketene dimer (AKD) when CCC was used as a filler was investigated. The results showed that the materials in green liquid, such as insoluble matter in green liquid, silicon and metal ions, were a little influence on the sizing efficiency of AKD. The higher BET and BJH pore volume of the CCC were the main reason for lower sizing efficiency of AKD when it was used as filler.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• Journal of Korean Society for Atmospheric Environment
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• v.25 no.1
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• pp.75-89
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• 2009

The purpose of this study was to identify $PM_{2.5}$ sources and to estimate their contributions to the border of Yongin-Suwon area, based on the analysis of the $PM_{2.5}$ mass concentration and the associated inorganic elements, ions and carbon components. The contribution of $PM_{2.5}$ sources were estimated by using a positive matrix factorization (PMF) model to identify air emission sources. For this study, $PM_{2.5}$ samples were collected from May, 2007 to April, 2008. The inorganic elements were analyzed by an ICP-AES. The ionic components in $PM_{2.5}$ were analyzed by an Ie. The carbon components were also analyzed by DRI/OGC analyzer. After performing PMF modeling, a total of 12 sources were identified and their contributions were quantitatively estimated. The contributions from each emission source were as follows: 11.3% from oil combustion source, 3.4% from bus/highway source, 5.8% from diesel vehicle source, 4.7% from gasoline vehicle source, 8.8% from biomass burning source, 15.1 % from secondary sulfate, 5.2% from secondary nitrate source, 13.4% from industrial related source, 4.1% from Cl-rich source, 19.6% from soil related source, 1.0% from aged sea salt, and 7.4% from coal combustion source, respectively. This study provides basic information on the major sources affecting air quality, and then it will help to effectively control $PM_{2.5}$ in this study area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.959-964
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• 2001

We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

• Journal of Korean Society for Atmospheric Environment
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• v.27 no.4
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• pp.395-404
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• 2011

Asian dust evens took place in Seoul on 27~28 March and 31 March~1 April 2007, during which the mass and chemical compositions of $PM_{10}$ were measured at urban area in Seoul, Korea. In conjunction with $PM_{10}$ compositions, the behaviors of gas precursors such as CO, $O_3$, $SO_2$, and $NO_2$ and meteorological parameters and air mass trajectories were thoroughly examined. The earlier case was a weak dust incidence which was characterized by elevated concentrations of CO, $SO_2$ and $NO_2$ as well as secondary aerosols. In contrast, the later showed the trait of the dust aerosols associated with high $PM_{10}$ mass and $Ca^{2+}$ concentrations. In general, the fractions of ionic species against mass decreased with increase in dust loading. The ratios of ${SO_4}^{2-}$ to ${NO_3}^-$ and $SO_2$ to $NO_2$ were similar in temporal variations, suggesting the concentrations of secondary aerosols were sensitive to the level of precursor gases. In this study, $Na^+$ and $Cl^-$ were also highly elevated during the heavy dust episode, which is thought to have originated from alkaline soils spreading through the northeast regions of China.

• Economic and Environmental Geology
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• v.37 no.3
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• pp.291-301
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• 2004

In order to charaterize weathering of chalcopyrite and behavior of dissolved metal ions in waste rocks from Manjang Cu mine, mineralogical studies such as refractive microscope, XRD and SEM/EDS analyses carried out. The weathering was mainly occurred in fractures and edge of the chalcopyrite within the mine waste rocks. The weathering process can be seen to reflect four stages based on the weathering degree of chalcopyrite. The main secondary minerals are goethite, covellite, azurite, malachite and brochantite. Dissolved Cu and As were mainly adsorbed Fe-hydroxide. Poorly crystalline Fe-oxide contains relatively high As contents. In oxdizing condition, the weathering of chalcopyrite mainly occurs along the fracture, while the replacement of chalcopyrite observed mainly in the grain and produced covellite and brochantite. The dissolved metals (Cu, Fe, As) in waste rocks from the abandoned Manjang mine area could attenuate naturally by precipitation, adsorption and replacement reaction.

• Korean Journal of Heritage: History & Science
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• v.46 no.3
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• pp.4-15
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• 2013

The study of corrosion products generated by archaeological bronzes that have been buried for a long time can provide certain evidence that enables us to understand the natural corrosion process of bronze and helps us develop conservation and preservation methods. In the present study, the specimens taken from two bronze mirrors and three bronze swords were used to study the corrosion morphology and the related phenomena such as selective corrosion of ${\alpha}$ or ${\alpha}+{\delta}$ phases, decuprification, destannification, and secondary copper. Furthermore, corrosion development was discussed based on the ions distributed throughout the corrosion layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.