• 제목/요약/키워드: screen-printed thick film

검색결과 44건 처리시간 0.026초

스크린 프린팅 공정에 의해 제조된 열전후막모듈의 전기저항에 미치는 금속코팅층의 영향 (Influence of Metal-Coating Layer on an Electrical Resistivity of Thick-Film-Type Thermoelectric Modules Fabricated by a Screen Printing Process)

  • 김경태;구혜영;하국현
    • 한국분말재료학회지
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    • 제18권5호
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    • pp.423-429
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    • 2011
  • Thermoelectric-thick films were fabricated by using a screen printing process of n and p-type bismuth-telluride-based pastes. The screen-printed thick films have approximately 30 ${\mu}m$ in thickness and show rough surfaces yielding an empty gap between an electrode and the thick film. The gap might result in an increase of an electrical resistivity of the fabricated thick-film-type thermoelectric module. In this study, we suggest a conductive metal coating onto the surfaces of the screen-printed paste in order to reduce the contact resistance in the module. As a result, the electrical resistivity of the thermoelectric module having a gold coating layer was significantly reduced up to 30% compared to that of a module without any metal coating. This result indicates that an introduction of conductive metal layers is effective to decrease the contact resistivity of a thick-film-typed thermoelectric module processed by screen printing.

인쇄 및 소결조건이 AlN 기판용 후막저항체의 특성에 미치는 영향 (Effect of Screen Printing and Sintering Conditions on Properties of Thick Film Resistor on AlN Substrate)

  • 구본급
    • 한국세라믹학회지
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    • 제51권4호
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    • pp.344-349
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    • 2014
  • $RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

Screen Printing법을 이용한 PMN-PZT 후막의 제조 및 특성 연구 (Fabrication and Characterization of PMN-PZT Thick Films Prepared by Screen Printing Method)

  • 김상종;최형욱;백동수;최지원;김태송;윤석진;김현재
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.921-925
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    • 2000
  • Characteristics of Pb(Mg, Nb)O$_3$-Pb(Zr, Ti)O$_3$system thick films fabricated by a screen printing method were investigated. The buffer layer were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited Pt as a electrode by sputtering on Ag-Pb layer. The printed thick films were burned out at 650$\^{C}$ and sintered at 950$\^{C}$ in O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20㎛ and Ag-Pb layer acted as a diffusion barrier above 3㎛ thickness. The PMN-PZT thick films were screen printed on Pt/Ag-Pb(6m) and sintered by 2nd step (650$\^{C}$/20min and 950$\^{C}$/1h) using paste mixed PMN-PZT and binder in the ratio of 70:30, and the remnant polarization of thick film was 9.1$\mu$C/㎠ in this conditions.

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졸-침투와 감광성 직접-패턴 기술을 이용하여 스크린인쇄된 Pb(Zr,Ti)O3 후막의 하이브리드 제작 (Hybrid Fabrication of Screen-printed Pb(Zr,Ti)O3 Thick Films Using a Sol-infiltration and Photosensitive Direct-patterning Technique)

  • 이진형;김태송;박형호
    • 마이크로전자및패키징학회지
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    • 제22권4호
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    • pp.83-89
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    • 2015
  • 본 논문에서는 졸-침투와 직접-패턴 공정을 이용하여 향상된 압전 후막의 전기적 특성과 우수한 패터닝 특성을 동시에 만족할 수 있는 제작 방법을 제시한다. 저온(< $850^{\circ}C$) 공정 후 후막의 고밀도 및 직접-패턴의 목적을 달성하기 위해서, 감광성 티탄산 지르콘산 연 ($Pb(Zr,Ti)O_3$, PZT) 졸을 스크린인쇄된 PZT 후막 내부로 침투시켰다. 직접-패턴된 PZT막은 포토크롬마스크와 UV 조사에 의해서 일정한 간격으로 인쇄된 후막 위에 성공적으로 형성되었다. 스크린인쇄된 후막은 분말형태의 기공성 구조를 갖고 있어 조사된 UV빛이 산란되기 때문에, 감광성 졸-침투 공정을 할 때 PZT 후막의 특성을 증가시키기 위한 공정의 최적화가 필요하다. 침투된 감광성 PZT 졸의 농도, 조사된 UV 시간 및 용매 현상 시간을 최적화한 결과, 0.35 M의 PZT 농도, 4 분의 UV 조사시간과 15 초의 용매 현상시간으로 졸-침투된 PZT 후막은 $800^{\circ}C$ 소결 온도에서 입자들의 성장에 의해 치밀화 정도가 증가되었다. 또한 PZT후막의 강유전 특성(잔류분극 및 항복 전압)도 향상되었다. 특히 잔류분극값은 스크린인쇄된 후막보다 약 4배정도 증가되었다. 이렇게 제작된 후막은 어레이타입의 압전형 마이크로미터크기의 센서 및 액츄에이터 등에 응용 가능성을 제시할 수 있었다.

세라믹 다이어프램을 이용한 후막 스트레인 게이지 압력센서 (Thick-Film Strain-gage Ceramic-Pressure Sensor)

  • 이성재;박하용;민남기
    • 한국전기전자재료학회논문지
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    • 제14권12호
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    • pp.987-993
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    • 2001
  • In this paper, we presents the construction details and output characteristics of a thick film piezoresistive strain gage. The thick film was printed on the ceramic diaphragm back side by screen printing and cured at 850$^{\circ}C$. The strain distribution and deflection on ceramic diaphragm were performed with finite-element method(FEM tool ANSYS-5.3). Various thick film strain gage characteristics were analysed, including nonlinearity, hysteresis, stability and sensitivity of thick film strain gages.

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Bi-계 고온초전도 선재의 제조 및 특성 연구 (A study on the fabrication and characterization of high temperature superconducting(HTS) tapes in Bi-System)

  • 정년호;성태현;한영희;한상철;이준성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.474-477
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    • 2002
  • We performed a continuous heat treatment experiment for long Si$_2$Sr$_2$CaCuO$_{x}$ (Bi2212) superconductor tapes on copper substrates. A precursor that contains a mixture of Bi$_2$O$_3$, SrCO$_3$, and CaCO$_3$ powders was prepared and screen-printed on Cu tapes. The screen- printed tapes were thermally treated by consecutive processes with various temperature settings using an air-filled tube furnace. The diffraction patterns and the microstructures of the high temperature superconductor thick films were analyzed by X-ray diffractometry (XRD) and optical Microscopy respectively, and the critical temperatures of the superconducting thick films were measured. The critical temperatures of the superconducting films were measured to be about 77K, and the films'crystallographic c-axes were confirmed to be normal to the film surfaces by XRD and morphology observation. We also observed that the thick superconducting layer is formed and aligned on the copper substrate via partial melted state that consists of a liquid phase and a secondary phase.e.

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다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성 (Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature)

  • 노현지;이성갑;박상만;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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    • pp.2209-2210
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성 (Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature)

  • 노현지;이성갑;박상만;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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    • pp.577-578
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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다층 PZT(20/80) 후막과 PZT(80/20) 박막의 소결온도에 따른 전기적 특성 (Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature)

  • 노현지;이성갑;박상만;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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    • pp.1243-1244
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

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