• 전기화학회지
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• 제19권2호
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• pp.29-38
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• 2016

전기화학적 방법을 통한 요산 (Uric acid) 정량분석을 위해 수용성 고분자 (hydrogel polymer)를 배위시킨 오스뮴 고분자 화합물과 요산 산화효소 (Uricase), 가교를 위한 PEGDGE (poly(ethylene glycol) diglycidyl ether)가 혼합된 용액을 스크린 프린팅된 탄소 전극 (SPCEs) 위에 흡착하여 측정하였다. 수용성 오스뮴 고분자의 전위를 조절하기 위해 리간드인 피리딘링의 4번 위치에 다른 전기음성도의 작용기를 갖는 오스뮴 고분자 화합물을 합성하였다. 합성된 오스뮴 고분자 화합물은 PAA-PVI (Poly(acrylic acid)-poly(vinyl imidazole)-$[osmium(4,4^{\prime}-dichloro-2,2^{\prime}-bipyridine)_2Cl]^{+/2+}$), PAA-PVI-$[osmium(4,4^{\prime}-dimethyl-2,2^{\prime}-bipyridine)_2Cl]^{+/2+}$, PAA-PVI-$[osmium(4,4^{\prime}-dimethoxy-2,2^{\prime}-bipyridine)_2Cl]^{+/2+}$이다. 제작된 효소전극은 순환전압전류법 (cyclic voltammetry)을 통해 uric acid에 의한 오스뮴 고분자 화합물들의 산화 촉매 전류(oxidation catalytic current)를 측정하여 uric acid의 농도를 정량적으로 분석할 수 있었다. 오스뮴 고분자 화합물들 중 0.215 V의 산화환원 전위를 갖는 $PAA-PVI-[Os(dme-bpy)_2Cl]^{+/2+}$ (PAA-PVI-osmium$(4,4^{\prime}-dimethyl-2,2^{\prime}-bipyridine)_2Cl$]$^{+/2+}$) 화합물을 이용하여 대표적인 간섭물질인 아스코르브산 (AA)과 포도당 (glucose)의 산화 신호의 간섭효과를 피할 수 있었다. 이를 이용하여 제작된 전극은 0.33 V 전위에서 다양한 농도의 uric acid (1.0, 1.5, 2.0, and 5.0 mM)의 전류를 측정한 결과 $r^2=0.9986$의 좋은 선형성을 갖는 것을 확인하였다. 이는 복잡하지 않은 간단한 방법과 일회용의 전극을 사용하기 때문에 현장현시 검사 (point of care; POC)에 적합한 요산측정용 바이오센서로서의 가능성을 확인 할 수 있었다.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.581-588
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• 2016

Piezoelectric thick films of a soft $Pb(Zr,Ti)O_3$ (PZT) based commercial material were produced by a conventional tape casting method. Thereafter, the interdigitated (IDT) Ag-Pd electrode pattern was printed on the $25{\mu}m$ thick piezoelectric film at room temperature. Co-firing of the 10-layer laminated piezoelectric thick films was conducted at $1,100^{\circ}C$ and $1,150^{\circ}C$ for 1 h, respectively. Piezoelectric cantilever energy harvesters were successfully fabricated using the IDT electrode pattern embedded piezoelectric laminates for 3-3 operation mode. Their energy harvesting characteristics were investigated with an excitation of 120 Hz and 1 g under various resistive loads (ranging from $10k{\Omega}$ to $200k{\Omega}$). A parabolic increase of voltage and a linear decrease of current were shown with an increase of resistive load for all the energy harvesters. In particular, a high output power of 3.64 mW at $100k{\Omega}$ was obtained from the energy harvester (sintered at $1,150^{\circ}C$).

• Current Photovoltaic Research
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• 제9권3호
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.