• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.66-70
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• 2003

In this paper a plannar singly balanced diode Miter for 24GHz band application is designed and implemented using a microstrip line and two schottky barrier beam lead mixer diodes. The implemented mixer have a conversion loss of 6 [dB], LO/RF isolation of 23 [dB], input 1dB compression point of 4 [dBm]. this diode mixer would be useful for homedyne radar.

• Proceedings of the KAIS Fall Conference
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• 2006.05a
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• pp.207-208
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• 2006

분자선(分子線)에피택시법(法)으로 성장(成長)한 ZnO 산화물반도체(酸化物半導體)를 이용(利用)하여 제작(製作)한 쇼트키배리어 다이오드에 대하여 자외선(紫外線) 광(光)센서로서의 광특성(光特性)을 조사(調査)한다. 첫째, 백색광(白色光) 조사시(照射時) 포화전류치(飽和電流値)가 100배(培) 이상(以上) 증가(增加)하는 광(光)여기 특성(特性)을 나타낸다. 둘째, 조사(照射)하는 �셈� 파장(波長)에 대하 390nm의 차단장파장(遮斷長波長)을 갖으며 195nm 이상(以上)의 밴드폭을 갖는 파장감도특성(波長感度特性)을 나타낸다. 셋째, 자외선(紫外線)에 대해 0.36msec의 시정수(時定數) 갖는 것으로 평가(評價)된다. 따라서, ZnO 산화물반도체(酸化物半導體)는 향후(向後) 자외선(紫外線) 광(光)센서소자의 재과(材科)로서 기대(期待)되어진다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.81-90
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• 1990

In this study, ion beam deposited tungsten thin film for gate material of GaAs SAGFET(Self Aligned Gate FET) was annealed from 800\ulcorner to 900\ulcorner using RTA and detailed investigations of structural and electrical characteristics of this film were carried out using four-point probe, XRD, SEM, AES and current-voltage measurement. Investigated results showed phase of as deposited tungsten film was fine grain \ulcornerphase and phase tdransformation of this film into \ulcornerphase occured at annealing condition of 900\ulcorner, 6sec. But regardless of phase transformation, electrical characteristics of tungsten film were very stable to 900\ulcorner and in case of 900\ulcorner, 4sec annealing condition Schottky barrier height obtained from 10 diodes measurements was 0.66 + 0.003 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.314-315
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• 2008

We have studied a property change of organic light-emitting diodes (OLED)s due to a surface reformation of indium-tin-oxide(ITO) substrate. An ITO is widely used as a transparent electrode in light-emitting diodes, and the OLEDs device performance is sensitive to the surface properties of the ITO. The ITO surface reformation could reduce the Schottky barrier at the ITO/organic interface and increase the adhesion of the organic layer onto the electrode. We have studied the characteristics of OLEDs with a treatment by a wet processing of the ITO substrate. The self-assembled monolayer(SAM) was used for wet processing. The characteristics of OLEDs were improved by SAM treatment of an ITO in this work. The OLEDs with a structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using seneral characterization techniques. Self-assembled monolayer introduced at the anode/organic interface gave an improvement in turn-on voltage, luminance and external quantum efficiency compared to the device without the SAM layer. SAM-treatment time of the ITO substrate was made to be 0/10/15/20/25min. The current efficiency of the device with 15min. treated SAM layer was increased by 3 times and the external quantum efficiency by 2.6 times.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1270-1271
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• 2008

Effects of thin ZnO/Mg interlayers on electrical and optical properties between p-GaN and ITO were characterized for its application to GaN-LEDs. The ZnO and Mg layers were deposited to have various thicknesses (1${\sim}$6nm for ZnO and 1${\sim}$2nm for Mg) by sputtering. After RTA process, the atomic migration between Mg and ZnO and the formation of Ga vacancy were observed from SIMS depth profile, resulting in the increase of hole concentration and the reduction of band bending at the surface region of p-GaN. The sample using ZnO(2nm)/Mg(2nm) interlayer produced the lowest contact resistance with SBH(Schottky barrier height) of 0.576 eV and the transmittance higher than 83% at a wavelength of 460nm when annealed at 500$^{\circ}C$ for 3min in air ambient.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.12
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• pp.1335-1340
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• 2003

In this paper, a single balanced diode Mixer for the homodyne FMCW radar to detect distance and velocity of a vehicle target is designed and implemented using a microstrip line and two schottky barrier beam lead diodes. This mixer is optimally designed to have less a conversion loss within the 100 MHz bandwidth with a little LO injection power and a higher LO isolation as soon as possible through the embedded electrical length of microsrtrip line placed between the coupler and diode matching, considering together LO matching condition. The measured results show 6 dB of conversion loss, 23 dB LO/RF isolation and 3 dBm of input 1l dB, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.1
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• pp.229-234
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• 1999

We analyzed the reliability characteristics in platinum schottky diodes with variations of n-type silicon substrates concentrations and temperature variations of measurements. The parameters of reliability measurement analysis are saturation current. turn-on voltage and ideality factor in the forward bias, the breakdown voltage in the reverse bias with device shapes. The shape of devices are square type and long rectangular type for edge effect. As a result, we analyzed that the forward turn-on voltage, barrier height, dynamic resistance and reverse breakdown voltage were decreased but ideality factor and saturation current were increased by increased concentration in platinum and n-silicon junction parts. In measurement temperature(RT, $50^{\circ}C$, $75^{\circ}C$), the extracted electrical parameter values of reliability characteristics were increased at the higher temperature under the forward and reverse bias. The long rectangular type devices were more decreased than the square type in reverse breakdown voltage by tunneling effects of edge part.

• Journal of IKEEE
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• v.27 no.4
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• pp.556-560
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• 2023

In this study, the impact of Nitrogen implantation process on deep-level defects and lifetime in 4H-SiC Epi surfaces was comparatively analyzed. Deep Level Transient Spectroscopy (DLTS) and Time Resolved Photoluminescence (TR-PL) were employed to measure deep-level defects and carrier lifetime. As-grown Schottky Barrier Diodes (SBDs) exhibited energy levels at 0.16 eV, 0.67 eV, and 1.54 eV, while for implantation SBD, defects at 0.15 eV were observed. This indicates a reduction in defects associated with energy levels Z_1/2 and EH_6/7, known as lifetime killers, as impurities from nitrogen implantation replace titanium and carbon vacancies.