• 한국진공학회지
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• 제12권S1호
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• pp.100-103
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• 2003

The magnetoresistance (MR) of $La_{1-\chi}S_{\chi}CoO_{3-\delta}$ films prepared by pulsed-laser deposition were investigated in order to clarify the magnetotransport properties around the metal-insulator transition. For the films in the metallic state ($\chi$ > 0.25), the MR(T) manifests a small peak at the Curie temperature due to the spin-disorder scattering. The transition of the film into the insulating state ($\chi\;\leq$ 0.25) is accompanied by an essential growth of the MR and results in a significant increase in the MR(T) with decreasing temperature, due to a phase separation into the ferromagnetic-metal clusters and the insulating matrix.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.366-369
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• 1999

Synthetic diamond films have been deposited on the silicon(100) surface and molybdenum substrates using an microwave plasma enhanced vapor deposition (MWPECVD) method. The effect of deposition time, surface morphology, X-ray diffraction pattrm, infrared transmittance and Raman Scattering have been studied, The diamond film deposited on Mo substrate for (100) hours at 40 torr H$_2$-CH$_4$O$_2$ gas system have been shown 1${\mu}{\textrm}{m}$/h of growth rate and good crystallization

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.93-96
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• 2017

The structural, electrical and optical properties of Ti thin films fabricated by dual magnetron sputtering were investigated under various film thicknesses. The fabricated Ti thin films exhibited uniform surfaces, crystallinity, various grain sizes, and with various film thicknesses. Also, the crystallinity and grain size of the Ti thin films increased with the increase of film thickness. The electrical properties of Ti thin films improved with the increase of film thickness. The results showed that the performance of TCO-less DSSC critically depended on the film thickness of the Ti working electrodes, due to the conductivity of Ti thin film. However, the maximum conversion efficiency of TCO-less DSSC was exhibited at the condition of 100 nm thickness due to the surface scattering of photons caused by the variation of grain size.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.41-41
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• 1998

Rare earth metal films have been used as a buffer layer for growing ferroelectric t thin film or a seed layer for magnetic multilayer. But when it was deposited on s semiconductor substrates for the application of magneto-optic (MO) storage media, it i is difficult to exactly measure magnetic cons떠nts due to shunting current, and so it n needs to grow metal films on insulator substrate to reduce such effect. Recently, it w was reported that ultra-thin Pt layer were epitaxially grown on A12O:J by ion beam s sputtering in 비떠 high vacuum and it can be used as a seed layer for the growth of C Co-contained magnetic multilayer. In this stu$\phi$, Pt thin film were epi떠xially grown on AI2D3 ($\alpha$)OJ) by RF magnetron s sputtering. The crystalline structure was analyzed by transmission electron microscope ( (TEM) and Rutherford Back Scattering (RBS)/Ion Channeling. In TEM study, Pt was b believed to be twinned on AI잉3($\alpha$)01) su$\pi$ace about Pt(ll1) plane.Moreover, RBS c channeling spectra showed that minimum scattering yield of Pt(111)/AI2O:J(1$\alpha$)OJ) was 4 4% and Pt(11J)/AI2D3($\alpha$)OJ) had 3-fold symmetry.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1246-1249
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• 1994

Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.

• 전기전자학회논문지
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• 제24권1호
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• pp.140-146
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• 2020

We investigated light extraction film based on polymer dispersed liquid crystal (PDLC) for application in organic light emitting diodes (OLEDs). At least 30 seconds of direct UV irradiation process for curing PDLC film on a bottom-emitting OLEDs was successfully achieved without damage on the intrinsic properties of the OLED. We demonstrated that high haze and transmittance can be tuned simultaneously by controlling the UV curing time. By adding PDLC as an external layer without any additional treatment, the light scattering and extraction is increased. Consequently, a PDLC scattering film with 89.8% and 59.9 of total transmittance and haze respectively, achieved about 16% of light intensity enhancement from integrating sphere measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.180-181
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• 2006

CdSe single crystal was grown by sublimation method in the two-step vertical electric furnace. This CdSe single crustal had hexagonal structure whose lattice constants of $a_0$ and $c_0$ were measured $4.299\;{\AA}$ and $7.009\;{\AA}$ by extrapolation method, respectively. CdSe single crystal was n-type semiconductor values were measured from Hall data by Van der Pauw method in the room temperature. Mobility tends to increase in proportion to $T^{3/2}$ from 33K to 130K due to impurity scattering. but mobility tends to decrease in proprtion to $T^{-3/2}$ from 130K to 293K due to lattice scattering. CdSe thin film was made by electron beam evaporation technique had also hexagonal structure. The grain size of this thin film was grown to $1{\mu}m$ as a result of annealing in the vapor of Ar or Cd. Annealde CdSe thin film was n-type semiconductor whose carrier density had about $7{\times}10^{12}cm^{-3}$ and its mobility had about $1.6{\times}10^3cm^2/V$ sec at room temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.137-137
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• 2000

The surface collective modes of thin K films deposited on Al(111) have been investigated using frequency dependent photoyield measurements and momentum resolved inelastic electron scattering. Jellium based theoretical calculations have predicted a richer set of features in the thin films than for the surface of a semi-infinite solid because there are th interference between two interfaces (substrate-film and film-vacuum) and heavy damping on the substrate. The use of an optical probe and electron scattering has allowed us to draw a more complete picture of the dynamic screening in thin films. The number, dispersion, damping and optical activity of the collective modes of the thin films have been measured as a function of K film thickness. New overlayer-induced excitations are observed : At qII=0, they correspond to the antisymmetric slab mode and the multipole surface plasmon. At finite qII=0, these modes undergo a transition towards the K multipole and monopole surface plasmons. With increasing coverage, the overlayer excitations turn into the collective modes of semi-infinite K. For a consistent interpretation of photoyield and electron energy loss spectra it is crucial to account for the non-analytic dispersion of the overlayer modes at small parallel wave vectors and for the finite angular resolution of the detector. The observed dispersions confirm predictions based on the time-dependent density functional approach.

• 한국광학회지
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• 제22권6호
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• pp.247-255
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• 2011

최근 확산기능과 집광기능을 동시에 가지는 복합필름에 대한 관심이 커지고 있다. 본 시뮬레이션연구에서는 복합필름으로 주목 받고 있는 렌티큘라 렌즈필름의 광학구조를 최적화하고 이를 기존의 백라이트가 보이는 광학 성능과 비교하였다. 보다 정확한 시뮬레이션의 수행을 위해 시험적으로 제작된 렌티큘라 렌즈필름이 보이는 휘도의 시야각 분포를 측정하였고 이 실험 결과를 재현할 수 있는 시뮬레이션 조건, 특히 도광판의 산란 패턴이 가지는 쌍방향 산란분포함수의 수학적 모델을 확보하였다. 이에 근거해서 시뮬레이션을 수행한 결과 렌티큘라 렌즈의 종횡비가 1.25, 굴절률이 1.65인 조건에서 이 필름의 집광성능이 최대가 됨을 확인하였다. 최적화된 렌티큘라 렌즈필름이 1매 포함된 백라이트 모델은 프리즘필름이 1매 포함된 기존의 백라이트에 비해 집광성능이 현저히 떨어졌지만 렌티큘라 렌즈필름 2매를 직교해서 적용하게 되면 프리즘필름 1매가 가지는 집광 성능과 비슷한 성능을 달성함과 동시에 부드러운 시야각 특성의 구현에 기여할 수 있다는 점을 확인하였다.

• Macromolecular Research
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• 제10권1호
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• pp.2-12
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• 2002

The small-angle X-ray scattering (SAXS) beamline BL4C1 at the 2.5 GeV storage ring of the Pohang Accelerator Laboratory (PAL) has been in its first you of operation since August 2000. During this first stage it could meet the basic requirements of the rapidly growing domestic SAXS user community, which has been carrying out measurements mainly on various polymer systems. The X-ray source is a bending magnet which produces white radiation with a critical energy of 5.5 keV. A synthetic double multilayer monochromator selects quasi-monochromatic radiation with a bandwidth of ca. 1.5%. This relatively low degree of monochromatization is sufficient for most SAXS measurements and allows a considerably higher flux at the sample as compared to monochromators using single crystals. Higher harmonics from the monochromator are rejected by reflection from a flat mirror, and a slit system is installed for collimation. A charge-coupled device (CCD) system, two one-dimensional photodiode arrays (PDA) and imaging plates (IP) are available its detectors. The overall performance of the beamline optics and of the detector systems has been checked using various standard samples. While the CCD and PDA detectors are well-suited for diffraction measurements, they give unsatisfactory data from weakly scattering samples, due to their high intrinsic noise. By using the IP system smooth scattering curves could be obtained in a wide dynamic range. In the second stage, stating from August 2001, the beamline will be upgraded with additional slits, focusing optics and gas-filled proportional detectors.