• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.191-191
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• 2012

InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.173-176
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• 2000

we analyzed multiple ray tracing in the highly scattering optical transmission(HSOT) polymer plate by means of the Monte carlo simulation. Light transmission behavior in the light guide was simulated by a 3-dimensional ray tracing program considering scattering angle given by the Mie theory and mean free path. To improve the uniformity of the conventional HSOT backlight unit, We employed additionally dot patterns. For the proposed structure, we calculated the light transmission behavior and obtained a bright and uniform backlight unit for a large size LCD panel of more than 12 inch.

• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1491-1504
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• 2012

InP quantum dot (QD)-organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs are capped with myristic acid (MA), which are incompatible with typical silicone encapsulants. We have introduced a new ligand, 3-aminopropyldimethylsilane (APDMS), which enables embedding the QDs into vinyl-functionalized silicones through direct chemical bonding. The exchange of ligand from MA to APDMS does not significantly affect the UV absorbance of the InP QDs, but quenches the PL to about 10% of its original value with the relative increase in surface related emission intensities, which is explained by stronger coordination of the APDMS ligands to the surface indium atoms. InP QD-organosilicon nanocomposites were synthesized by connecting the QDs using a short cross-linker such as 1,4-divinyltetramethylsilylethane (DVMSE) by the hydrosilylation reaction. The formation and changes in the optical properties of the InP QD-organosilicon nanocomposite were monitored by ultraviolet visible (UV-vis) absorbance and steady state photoluminescence (PL) spectroscopies. As the hydrosilylation reaction proceeds, the QD-organosilicon nanocomposite is formed and grows in size, causing an increase in the UV-vis absorbance due to the scattering effect. At the same time, the PL spectrum is red-shifted and, very interestingly, the PL is quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nanocomposites, namely the scattering effect, F$\ddot{o}$rster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.

• Journal of the Optical Society of Korea
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• 제10권4호
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• pp.184-187
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• 2006

For resonant excitation of the ground state $1s^e-1S^h_{3/2}$, dynamics of 'the electron-hole pair in a CdSe quantum dot was investigated by degenerate pump-probe measurement. At low e-h pair densities, the decay of $1s^e-1S^h_{3/2}$ state is dominated by radiative recombination. As the number of the electron-hole pairs increases, new decay features become significant. Theoretical comparison suggests this is attributed to the bi-molecular and Auger-type scattering.

• 대한수학회지
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• 제55권2호
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• pp.373-390
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• 2018

In this paper we study the small-data scattering of the d dimensional fractional $Schr{\ddot{o}}dinger$ equations with d = 2, 3, $L{\acute{e}}vy$ index 1 < ${\alpha}$ < 2 and Hartree type nonlinearity $F(u)={\mu}({\mid}x{\mid}^{-{\gamma}}{\ast}{\mid}u{\mid}^2)u$ with max(${\alpha}$, ${\frac{2d}{2d-1}}$) < ${\gamma}{\leq}2$, ${\gamma}$ < d. This equation is scaling-critical in ${\dot{H}}^{s_c}$, $s_c={\frac{{\gamma}-{\alpha}}{2}}$. We show that the solution scatters in $H^{s,1}$ for any s > $s_c$, where $H^{s,1}$ is a space of Sobolev type taking in angular regularity with norm defined by ${\parallel}{\varphi}{\parallel}_{H^{s,1}}={\parallel}{\varphi}{\parallel}_{H^s}+{\parallel}{\nabla}_{{\mathbb{S}}{\varphi}}{\parallel}_{H^s}$. For this purpose we use the recently developed Strichartz estimate which is $L^2$-averaged on the unit sphere ${\mathbb{S}}^{d-1}$ and utilize $U^p-V^p$ space argument.

• 전기학회논문지P
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• 제66권4호
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• pp.242-246
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• 2017

In this study, it was investigated about optical simulation in high brightness and high uniformity general lighting using glass light guide plate. And we adopt edge-light emission type light plate. Edge-light type lighting has been used LCD application, especially note PC or smart phone backlight unit. Because it had the good properties such as slim shape and light weight. We thought this type was suitable for general lighting application such as wall attached type or ceiling mount type. But many of edge-light type lighting had problems. It called slanted output light rays. That was main key parameter how could control the direction of output light rays. We investigated the solution of this problems, using ray tracing method, we recognized the major fact of the solution relied on the geometric structure of diffusing dot shape. We set the conditions of aspect ratio in diffusing dot shape such as 0.5 to 1. And, at first, we designed diffusing dots shape based on the results of optical simulation and made specimen. as above condition, and acquired good result in confirming dots shape such as the value of the output rays's peak angle was around 75 degrees. And good light distribution characteristics were measured by slated spectro-radiometer. It was shown that the effective ways of designing light distribution characteristics using optical simulation such as ray tracing linear method for making general lighting using glass light guide plate.

• Nuclear Engineering and Technology
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• 제25권1호
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• pp.51-62
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• 1993

입자수송방정식의 각분할해석법에서 입자흐름방향을 묘사하는 각방향에 대한 각분할집합이 고정된 값이 아니고 각입자속으로 조종되는 각요소법에 근거하여 방사선차폐해석 목적의 전산프로그램(TDET)를 2차원직각좌표계에 대해서 개발하였다. 산란선원항의 각의존성은 Spherical Harmonics Series Expansion으로 해석하였고 입자의 에너지 의존성은 다중에너지군으로 처리하였다. 3 종류의 Benchmark 시험을 통해서 TDET 프로그램을 검증하였다. 평판형 등방적 선원을 가진 사방흡수체에 대한 해석에서 TDET 해석결과가 MORSE-CG 해석결과에 잘 일치하고. 각분할법으로 해석할때 나타나는 Ray effect를 DOT 4.3 보다 잘 치 유하고 있다. 차폐체 내에 좁은 Vacuum duct가 있는 문제의 해석에서 TDET는 MORSE-CG와 마찬가지로 duct를 통한 streaming leak-age에 대해서 분명하고 현저한, 그리고 DOT 4.3보다 매우 훌륭한 해석결과를 보여주고 있다. 원자로차폐구조물 규모에 대해, 2 에너지군, 등방적 산란 및 선형 비등방 산란의 경우에 대해서 해석한 결과 각분할법으로 계산하여 제시하고 있는 기준치에서는 여러 mesh들에 걸쳐 넓은 규모의 Ray effect를 나타내고 있는데, TDET에 의한 해석결과에서는 이웃 mesh들 간에 미세한 Ray effect를 나타내고 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• 분석과학
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• 제28권1호
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• pp.33-39
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• 2015

CdS 양자점 입자는 특정 파장의 빛을 방출하는 반도체 나노 결정으로 이러한 광학적 특성 때문에 질병 진단 시약, 광학기술, 미디어 산업 및 태양전지와 같은 다양한 분야에서 응용되는 물질이다. 방출하는 빛의 색은 입자의 크기에 의존하기 때문에 CdS 양자점 입자의 크기 및 크기분포를 정확하게 분석하는 것이 필요하다. 본 연구에서는 CdS 양자점 입자를 감마-선 조사법(${\gamma}$-ray irradiation method)을 이용하여 합성하고, 크기 및 크기 분포도를 결정하기 위하여 침강 장-흐름 분획법 (SdFFF)를 이용하였다. 침강 장-흐름 분획법을 이용한 CdS 양자점 입자의 정확한 분석을 위하여 분석조건의 최적화(유속, 외부장 세기, field-programming)에 대하여 조사되었다. 투과 전자 현미경(transmission electron microscopy, TEM)으로 확인된 단일 입자의 크기는 ~4 nm 였으며, 단일 입자의 응집으로 생성된 2차 입자 크기의 평균은 159 nm로 확인되었다. 첨가된 입자 안정제의 농도가 증가할수록 CdS 양자점 입자의 크기가 감소하는 경향성을 확인하였다. 침강 장-흐름 분획법, 투과 전자 현미경, 그리고 동적 광 산란법(dynamic light scattering, DLS)으로 결정된 CdS 양자점 크기는 각각 126, 159, 그리고 152 nm 였다. 본 연구의 결과로 침강 장-흐름 분획법은 비교적 넓은 크기분포를 갖는 다양한 종류의 무기입자의 크기 및 크기 분포도를 결정하는데 유용한 방법임을 확인하였다.

• 한국방사선학회논문지
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• 제15권7호
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• pp.943-948
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• 2021

본 연구는 방사성 동위원소인 ^99mTc, ¹⁸F가 주입된 환자에게서 나오는 감마선이 안정실 벽면 등의 높은 원자번호로 되어있는 물질과 밀착되어 증가하는 산란선으로 인한 표면 선량 변화를 알아보고자 하였다. NEMA 팬텀에 ^99mTc과 ¹⁸F을 각각 20, 10 mCi를 주입하여 준비한 뒤 지표면과 1 m 높이에 팬텀을 위치시키고 주위가 빈 공간인 경우와 벽면으로부터 0, 5, 10 cm 거리에 팬텀을 위치시키고 벽면과 마주 보는 팬텀의 동일한 위치에 25개의 OSLD NanoDot을 부착시켜 60분간 표면 선량을 측정하였다. 실험의 재현성을 위하여 각 5회 반복 실험하였으며, 유의성 검정을 위하여 일원 배치 분산분석 (one way Analysis of Variance; ANOVA)을 시행하고 사후 검정으로 Tukey를 사용하였다. 연구결과 주위가 빈 공간인 경우와 0, 5, 10 cm 였을 때 ^99mTc에서는 각각 220.268, 287.121, 243.957, 226.272 mGy의 표면 선량이 측정되었으며, ¹⁸F에서는 각각 637.111, 724.469, 657.107, 640.365 mGy로 측정되었다. 환자가 대기하는 동안 위치에 따른 표면 선량 변화를 줄이기 위해 환자와 밀착되는 땅바닥이나 벽면과의 거리를 10 cm 이상의 거리를 두거나, 에어매트리스 등을 설치하여 산란선을 최대한 예방하는 것이 필요하며, 향후 환자 대기실 및 안정실 등의 구조 설정 시에 벽면 등으로 인한 산란선을 고려해야 하며, 검사 이외에 외부피폭을 감소시킬 수 있다는 점을 증명한 것에 이 연구의 의의가 있다.