• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.84-84
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• 1996

• Bulletin of the Korean Chemical Society
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• v.26 no.7
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• pp.1071-1074
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• 2005

A variable-low temperature scanning tunneling microscope (VT-STM), which operates from 77 to 350 K in ultrahigh vacuum, was built and used to study imaging and manipulation of benzene molecules on Si surfaces. Four types of benzene adsorption structures were first imaged on the Si(5 5 12)-2x1 surface. Desorption process of benzene molecules by tunneling electrons was studied on the Si(001)-2xn surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.984-987
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• 2003

유기발광소자 안에 존재하는 비발광영역(dark spot)의 전압에 대한 영향을 근접장 마이크로파 현미경(near-field scanning microwave microscope)을 이용하여 관찰하였다. 유기발광소자는 glass/indiumtin oxide(ITO)/Cu-Pc/tris-(8-hydroquinoline)aluminum(Alq3)/aluminum(Al) 의 기본구조로 제작하였다. Dark spot은 ITO 기판을 부분적으로 에칭하여서 형성시켰다. Dark spot에 $0{\sim}l5 V$ 까지 전압을 인가시키면서 인가 전압에 따른 전기적 특성을 근접장 마이크로파 현미경 image의 변화와 반사계수인 $S_{11}$ 측정을 통하여 연구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.132-136
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• 2004

열 증착 방법을 이용하여 copper(II)-phthalocyanine(CuPc) 박막을 glass 기판 위에 제작하였다. 열처리 조건은 $150^{\circ}C$에서 후열(annealing) 처리 하는 방식과 예열하는 두 가지 방식으로 달리하였다. 제작된 박막의 전기전도도를 평가하기 위해 마이크로웨이브 근접장 효과를 이용한 근접장 현미경(near-field scanning microwave microscope)을 이용하여 비파괴적인 방식으로 CuPc 박막의 반사계수(reflection coefficient)를 측정하였다. CuPc 박막의 전기전도도 특성을 UV 흡수도를 통한 에너지 밴드갭의 shift 현상과 관련지어 설명하고 또한 x-ray diffraction(XRD) data를 통해 박막의 결정 특성과 비교하였다. 박막 표면 특성은 SEM(scanning microscope microscopy)을 통해 관측하였다. 열처리 조건에 따른 CuPc 박막의 전기전도도 특성은 후열 처리한 박막의 경우 예열 처리한 박막보다 전기 전도 특성이 향상되었음을 관측할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.147-150
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• 2003

유기발광소자 안에 존재하는 비발광영역(dark spot)의 전압에 대한 영향을 근접장 마이크로파 현미경(near-field scanning microwave microscope)을 이용하여 관찰하였다. 유기발광소자는 glass/indiumtin oxide(ITO)/Cu-Pc/tris-(8-hydroquinoline)aluminum(Alp3)/aluminum(Al)의 기본구조로 제작하였다. 비발광영역은 ITO 기판을 부분적으로 에칭하여서 형성시켰다. Dark spot에 0~15V 전압을 인가시키면서 인가 전압에 따른 dark spot 구조적 및 전기적 특성을 근접장 마이크로파 현미경 Image의 변화와 반사계수인 $S_11$측정을 통하여 연구하였다.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.132-134
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• 2006

To improve equipment throughput and device yield, a malfunction in plasma equipment should be accurately diagnosed. A recognition model for plasma diagnosis was constructed by applying neural network to scanning electron microscope (SEM) image of plasma-etched patterns. The experimental data were collected from a plasma etching of tungsten thin films. Faults in plasma were generated by simulating a variation in process parameters. Feature vectors were obtained by applying direct and wavelet techniques to SEM Images. The wavelet techniques generated three feature vectors composed of detailed components. The diagnosis models constructed were evaluated in terms of the recognition accuracy. The direct technique yielded much smaller recognition accuracy with respect to the wavelet technique. The improvement was about 82%. This demonstrates that the direct method is more effective in constructing a neural network model of SEM profile information.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2005.05a
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• pp.9-14
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• 2005

The nature of the signals collected by an SEM(Scanning Electron Microscope) in order to form images are all dependent on the detector used to collect them, and the quality of an acquired image is strongly influenced by detector performance. Therefore, the development of detector with high performance is very important in pulling up the resolution of SEM This study presents the secondary electron detector for use in scanning electron microscope, electric circuit and I/V conversion circuit for driving that detector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.494-497
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• 2003

We report the dark spots in organic light emitting diodes by using a near-field scanning microwave microscope. Devices structure was glass / indium-tin-oxide(ITO) / copper-pthalocyiane(Cu-Pc) / tris-(8-hydroquinoline)aluminum(Alq3) / aluminum(Al). We made artificial dark spots by using a etching technique on a ITO substrate. Near-field scanning microwave microscope images and reflective coefficient of dark spots were measured and compared by the change of various applied voltage changes 0-15V.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.46-46
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• 2001

• Bulletin of the Korean Chemical Society
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• v.28 no.1
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• pp.81-84
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• 2007

Ab initio periodic Hartree-Fock calculations with the full potential and minimum basis set are applied to interpretation of scanning tunneling microscope (STM) and atomic force microscope (AFM) images on 1TVTe2. Our results show that the simulated STM image shows asymmetry while the simulated AFM image shows the circular electron densities at the bright spots without asymmetry of electron density to agree with the experimental AFM image. The bright spots of both the STM and AFM images of VTe2 are associated with the surface Te atoms, while the patterns of bright spots of STM and AFM images are different.