• Progress in Superconductivity
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• v.13 no.3
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• pp.151-157
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• 2012

In this paper, we used E-J constitutive law and H-formulation to calculate magnetic field profile, current density, and magnetization of high temperature superconductor (HTS) placed in time varying applied magnetic field. Finite element method (FEM)-based software, Comsol Multiphysics 3.5a, was employed to simulate 2-dimensional model of a superconducting thin strip. The numerical results based on Kim's critical state model were compared with the case of strip in a perpendicular field in the Brandt's paper as well as experimental data observed by Scanning Hall Probe and SQUID.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.95-95
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• 2009

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.1-5
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• 2012

Al doped ZnO (AZO) thin film was deposited by using Facing Target Sputtering (FTS) system. This work examined the properties of AZO thin film as a function of the substrate temperature. The sputtering targets were 4 inch diameter disks of AZO (ZnO : $Al_2O_3$ = 98 : 2 wt.% ). The properties of electrical, structural and optical were investigated by 4-point probe, Hall effect measurement, x-ray diffractometer (XRD), field-emitting scanning electron microscopy (FE-SEM), and UV/VIS spectrometer. The lowest resistivity of films was $5.67{\times}10^{-4}{\Omega}.cm$ and the average optical transmittance of the films was above 85% in the visible range.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.112-115
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• 2017

ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under $10^{-4}({\Omega}-cm)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.403-404
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• 2008

In this study, we prepared ITO thin film on glass, polycarbonate (PC) and polyethersulfone (PES) substrate in Facing Targets sputtering (FTS) system. Properties of as-deposited thin films's aging change were investigated as a function of time placed in the air. The electrical and optical properties of as-deposited thin films were employed by a four point probe and an UV/VIS spectrometer, an X-ray diffractometer (XRD), a Field Emission Scanning Electron Microscope(FESEM) and a Hall Effect measurement. As a result, as time went by, transmittance of all films did not change but resistivity of films was decreasing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.385-386
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• 2007

We prepared the Al doped ZnO coating Ag multilayer thin films on glass without substrate heating using FTS system. The structure of multilayer thin films has Al doped ZnO/Ag/Al doped ZnO(AZO/Ag/AZO). The thickness of top and bottom AZO thin films were fixed to 50 nm, respectively and controlled the thickness of Ag thin films with deposition time. As-doped multilayer thin films were prepared at 1mTorr and input power (DC) of 100W at room temperature. To investigate the film properties, we employed four-point probe, UVNIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.403-404
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. ZnO doped the content of Al 2 wt% was used and the sputtering conditions were gas pressure 1mTorr and input power 100W. The electrical, structural and optical properties of AZO thin films were investigated. To investigate the as-deposited thin film properties, we employed four-point probe, UV/VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.223-223
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• 2010

본 연구에서는 Al-doped ZnO (AZO) 박막을 linear facing target sputter (LFTS) 시스템을 이용하여 성막 하였고 박막의 특성을 분석하였다. LFTS 시스템은 마주보는 두 AZO 타겟 사이에 고밀도의 플라즈마를 구속시켜 플라즈마 데미지 없이 산화물 박막을 성막 시킬 수 있는 장치이다. LFTS로 성막된 AZO 박막의 인가된 DC 파워에 따른 전기적 특성을 분석하기 위해 four-point probe와 Hall measurement 장비를 이용하여 분석을 진행 하였으며, 광학적 특성 분석을 위해 UV/Vis spectrometer 장비를 이용하여 분석하였다. AZO 박막의 구조적, 표면적 특성을 분석하기 위해 X-ray diffraction(XRD) 및 scanning electron microscope(SEM)을 사용하여 상온에서 성막된 AZO 박막의 특성을 관찰 하였다. 또한 AZO 박막의 PET 기판과의 접합성 및 구부림 시의 안정성을 평가하기 위해 bending test를 진행 하였다. 최적화된 AZO 박막으로부터 기판에 성막 중 열처리공정이나 후 열처리 공정의 진행 없이 35 ohm/square의 낮은 면저항과 약 80 % 이상의 투과율을 얻을 수 있었다. LFTS 시스템을 이용하여 낮은 공정온도에서 AZO 박막을 성막 하였음에도 불구하고 낮은 저항과 높은 투과도 특성을 나타내고 있어 기존의 투명 박막을 대체 할 수 있는 가능성을 제시하였다

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.57-60
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• 2009

Transparent electrode ZnO:Al(AZO)films were deposited on a PES (polyethersulfone) polymer substrate for thin film solar cells applications. A PES substrate with a thickness of 0.2mm and transmittance > 90% in the visible range was used because it is light weight and can deform easily. AZO thin films were prepared at a fixed DC power, $PO_2\;=\;P(O_2)/[P(O_2)\;+\;P(Ar)]$, and various substrate temperatures. The properties of AZO thin films were examined by X-ray diffraction, UV/VIS spectroscopy, four-point probe, Hall measurements, and field emission scanning electron microscopy. The lowest resistivity of all the films was $4.493\;{\times}\;10^{-4}\;[\Omega-cm]$ and the transmittance was > 80% in the visible range.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.53-57
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• 2019

In this study, we prepared sputtering cathode for large sputtering thin film in the facing targets sputtering(FTS) system. Before fabrication of cathode equipment, we investigated optimal magnetic flux in the sputtering cathode by using magnetic field stimulation(Comsol). According to the result of magnetic field stimulation, we manufactured the cathode. After we mounted laboratory-designed cathode on FTS system, the discharge properties were observed in vacuum condition. In addition, ITO films were deposited on glass substrate and their electrical and optical properties were investigated by various measurements (four-point probe, UV-VIS spectrometer, field emission scanning electron microscopy(FE-SEM), Hall-effect measurement).