• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.863-866
• /
• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.285-285
• /
• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• The Journal of Advanced Prosthodontics
• /
• v.6 no.3
• /
• pp.157-164
• /
• 2014

PURPOSE. This study focused on in vitro cell differentiation and surface characteristics in a magnesium coated titanium surface implanted on using a plasma ion source. MATERIALS AND METHODS. 40 commercially made pure titanium discs were prepared to produce Ti oxide machined surface (M) and Mg-incorporated Ti oxide machined surface (MM). Surface properties were analyzed using a scanning electron microscopy (SEM). On each surface, alkaline phosphatase (ALP) activity, alizarin red S staining for mineralization of MC3T3-E1 cells, and quantitative analysis of osteoblastic gene expression, were evaluated. Actin ring formation assay and gene expression analysis of TRAP and GAPDH performing RT-PCR were performed to characterize osteoclast differentiation on mouse bone marrow-derived macrophages (BMMs). RESULTS. MM showed similar surface morphology and surface roughness with M, but was slightly smoother after ion implantation at the micron scale. M was more hydrophobic than MM. No significant difference between surfaces on ALP activity at 7 and 14 days were observed. Real-time PCR analyses showed similar levels of mRNA expression of the osteoblast phenotype genes; osteopontin (OPN), osteocalcin (OCN), bone sialoprotein (BSP), and collagen 1 (Col 1) in cell grown on MM at 7, 14 and 21 days. Alizarin red S staining at 21 days showed no significant difference. BMMs differentiation increased in M and MM. Actin ring formation assay and gene expression analysis of TRAP showed osteoclast differentiation to be more active on MM. CONCLUSION. Both M and MM have a good effect on osteoblastic cell differentiation, but MM may speed the bone remodeling process by activating on osteoclast differentiation.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.5
• /
• pp.1038-1042
• /
• 2008

Mono and multilayer TiO2(Fe, $PEG_{600}$) films were deposited by the dip-coating on $SiO_2$/glass substrate using sol-gel method. In an attempt to improve the antibacterial properties of doped $TiO_2$ films, the influence of the iron oxides and polyethilenglycol ($PEG_{600}$) on the morphological, optical, surface chemical composition and biological properties of nanostructured layers was studied. Complementary measurements were performed including Spectroscopic Ellipsometry (SE), Scanning Electron Microscopy (SEM) coupled with the fractal analysis, X-Ray Photoelectron Spectroscopy (XPS) and antibacterial tests. It was found that different concentrations of Fe and $PEG_{600}$ added to coating solution strongly influence the porosity and morphology at nanometric scale related to fractal behaviour and the elemental and chemical states of the surfaces as well. The thermal treatment under oxidative atmosphere leads to films densification and oxides phase stabilization. The antibacterial activity of coatings against Escherichia Coli bacteria was examined by specific antibacterial tests.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.658-658
• /
• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Transactions of the Korean hydrogen and new energy society
• /
• v.23 no.5
• /
• pp.455-460
• /
• 2012

This work describes the hydriding chemical vapor synthesis (HCVS) of the $MgH_2$ in a hydrogen atmosphere and the product's hydriding-dehydridng properties. Mg powder was used as a starting material to synthesize $MgH_2$ and uniformly heated to a temperature of $600^{\circ}C$ for Mg vaporization. The effects of hydrogen pressure on the morphology and the composition of HCVS-$MgH_2$ were examined by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is clearly seen that after the HCVS process, the particle size of synthesized $MgH_2$ was drastically reduced to the submicron or micrometer-scale and these showed different shapes (needle-like nanofibers and angulated plate) depending on the hydrogen pressure. It was found that after the HCVS process, the $H_2$ desorption temperature of HCVS-$MgH_2$ decreased from 380 to $410^{\circ}C$, and the minimum hydrogen desorption tempreature of HCVS-$MgH_2$ powder with needle-like shape can be obtained. In addition, the enhanced hydrogen storage performance for needle-like $MgH_2$ was achieved during subsequent hydriding-dehydriding cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.41-43
• /
• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Journal of the Korean institute of surface engineering
• /
• v.37 no.5
• /
• pp.253-262
• /
• 2004

Calcareous deposits are the consequence of pH increase of the electrolyte adjacent to metal surface affected by cathodic current in seawater. It obviously has several advantages over conventional coatings, since the calcareous deposit coating is formed from coating (Mg$^{2+}$, $Ca^{2+}$) naturally existing in seawater. In consideration of this respect, environment friendly calcareous deposit films were formed by an electro deposition technique on steel substrates submerged in 48$^{\circ}C$ natural seawater. And the influence of current density, coating time and attachment of steel mesh on composition ratio, structure and morphology of the electrodeposited films were investigated by Scanning Electron Microscopy(SEM), Energy Dispersive Spectroscopy(EDS) and X-Ray Diffractor(XRD), respectively. Accordingly, this study provides a better understanding of the composition between the growth of $Mg(OH)_2$ and $CaCO_3$ during the formation of electro deposit films on steel substrate under cathodically electrodeposition in $48^{\circ}C$ natural seawater. The Mg compositions, in general, are getting decreased regardless of current density but Ca compositions are getting increased as electrodeposition time runs. That is, $Mg(OH)_2$ compounds of brucite structure shaped as flat type is formed at the initial stage of electrodeposition, but CaCO$_3$ compounds of aragonite structure shaped as flower type is formed in large scale. Besides, $Mg(OH)_2$ compounds were much formed at 5 A/$\m^2$ environment condition compared to the 3 A/$\m^2$ and 4 A/$\m^2$ environment conditions. This is because that OH- which was comparatively largely generated at the metal surface is preferably combined with $Mg^{2+}$TEX>.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.642-642
• /
• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Transactions of the Korean hydrogen and new energy society
• /
• v.29 no.6
• /
• pp.559-569
• /
• 2018

Catalytic supports made of carbon have many advantages, such as high coking resistance, tailorable pore and surface structures, and ease of recycling of waste catalysts. Moreover, they do not require pre-reduction. In this study, ash-free coal (AFC) was obtained by the thermal extraction of carbonaceous components from raw coal and its performance as a carbon catalytic support was compared with that of well-known activated carbon (AC). Nickel was dispersed on the carbon supports and the resulting catalysts were applied to the steam reforming of toluene (SRT), a model compound of biomass tar. Interestingly, nickel catalysts dispersed on AFC, which has a very small surface area (${\sim}0.13m^2/g$), showed higher activity than those dispersed on AC, which has a large surface area ($1,173A/cm^2$). X-ray diffraction (XRD) analysis showed that the particle size of nickel deposited on AFC was smaller than that deposited on AC, with the average values on AFC ${\approx}11nm$ and on AC ${\approx}23nm$. This proved that heteroatomic functional groups in AFC, such as carboxyls, can provide ion-exchange or adsorption sites for the nano-scale dispersion of nickel. In addition, the pore structure, surface morphology, chemical composition, and chemical state of the prepared catalysts were analyzed using Brunauer-Emmett-Taylor (BET) analysis, transmission electron microscopy (TEM), scanning electron microscopy (SEM), x-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, and temperature-programmed reduction (TPR).