• Journal of Broadcast Engineering
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• v.15 no.3
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• pp.368-379
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• 2010

As high-definition video is broadly used in various system such as broadcast system and digital camcorder the proper method in order to improve the quality of high-definition video is needed. In this paper, we propose an efficient method to improve color and contrast of high-definition video. In order to apply the image enhancement method to high-definition video, scale-down video of high-definition video is used and the parameter for image enhancement method is computed from small size video. To enhance the color of high-definition video, we apply color constancy method. First, we separate the video into several scenes by cut detection method. Then, we apply color constancy to each scene with same parameter. To improve the contrast of high-definition video, we use union of original image and histogram equalized image, and weight is calculated based on sorting of histogram bins. Finally, the performance of proposed method is demonstrated in experiment section.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• Journal of IKEEE
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• v.24 no.3
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• pp.719-726
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• 2020

A threshold-voltage sensing circuit is proposed to compensate for pixel aging in active matrix organic light-emitting diodes. The proposed threshold-voltage sensing circuit consists of sample-hold (S/H) circuits and a single-ended successive approximation register (SAR) analog-to-digital converter (ADC) with a resolution of 10 bits. To remove a scale down converter of each S/H circuit and a voltage gain amplifier with a signl-to-differentail converter, the middle reference voltage calibration and input range calibration for the single-ended SAR ADC are performed in the capacitor digital-to-analog converter and reference driver. The proposed threshold-voltage sensing circuit is designed by using a 180-nm CMOS process with a supply voltage of 1.8 V. The ENOB and power consimption of the single-ended SAR ADC are 9.425 bit and 2.83 mW, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.8
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• pp.1-7
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• 2016

A range of techniques have been being developed to remove the volatile organic compounds from paining processes. High temperature decomposition of harmful VOCs using arc plasma has recently been proposed, and this work analyzed the extreme hot process by computer-aided fluid dynamics prior to the reactor design. Numerical simulations utilized the conservation equations of mass and momentum. The simulation showed that the fluid flowed down along the inner surface of the centrifugal reactor by forming intensive spiral trajectories. Although the high temperature gas generated by plasma influences the bottom of the reactor, no heat transfer in radial direction appeared. The decomposition efficiency of a typical VOCs, toluene, was found to be a maximum of 67% across the reactor, which was similar to the value (approximately 70%) for the lab-scale test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.6
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• pp.2588-2595
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• 2013

In a traditional hydraulic elevator, elevator car is descended by down control valve, and the oil hydraulic energy must be lost during the descending stroke. In this paper, the performance characteristics of the hybrid type energy saving unit, is used to save the hydraulic energy which is lost during the descending stroke, for a hydraulic elevator are studied. The energy can be reused as the auxiliary power. The results show that the performance characteristics, such as the pressure, flow rate, output current and voltage, efficiency, and the energy recovery rate of the unit are stable and good as the energy recovery rate is 54%, and the energy saving unit is useful to reuse the saved energy during the descending stroke of elevator car. Also, it was confirmed that the energy saving unit can be deployed on a commercial scale.

• Phonetics and Speech Sciences
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• v.4 no.4
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• pp.139-146
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• 2012

This study was designed to examine comfort levels of pitch and loudness with target matching and their effects on electroglottographic (EGG) and acoustic measures. Twelve speakers, six males and six females, were instructed to produce /a/ sustained vowel for three seconds at a comfortable pitch and loudness level without any instruction and with a target matching procedure of either a certain f0 or SPL separately with visual and auditory feedback. The range of pitch for females and males were presented by progressing up and down randomly at intervals of 5Hz from 150 Hz to 310 Hz (total 33 frequency targets) and from 85 Hz to 190 Hz (total 22 frequency targets), respectively. The loudness levels were 65, 75, 85, 95 dB (total of four intensity targets) for both males and females. Subjective estimations of comfortable levels were obtained using a 10-point equal-appearing interval rating scale following each phonation. The results showed that males and females demonstrated similar trends in loudness levels with greatest comfort at 75 dB, whereas pitch comfort ratings showed a greater variability with females having a wider range with target matching. In the comfort levels of individuals, most male and female speakers rated higher comfort at soft, rather than loud phonations. On the other hand, most male speakers perceived highest comfort levels below the comfort pitch levels they phonated under natural conditions. Higher frequency ranges, however, were perceived to be more comfortable than those of natural condition in most female speakers, although the comfortable pitch levels in spontaneous phonations were within the comfort level ranges determined by targeted phonations. When comparing acoustic (%jitter, %shimmer, SNR) and EGG measures (CQ%) between spontaneous comfortable phonations and targeted phonations produced by the same subject at similar f0 and intensity, no significant differences were observed (p>0.05). Thus, target matching procedures may be considered a compatible and alternative method to reduce the variability of comfortable pitch and loudness levels by eliciting consistent comfortable phonations.

• The Journal of Korean Physical Therapy
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• v.21 no.4
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• pp.23-30
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• 2009

Purpose: This study investigated the efficacy of task-related circuit training aimed at improving balance in individuals discharged from rehabilitation facilities following a stroke. Methods: We recruited 12 stroke patients (34-66 years of age) to participate in a task-related circuit training program. Baseline assessment included a history of stroke and an assessment using the Mini-Mental State Examination Korea (MMSE-K). After a baseline assessment, follow-up assessments were administered pre- and post-training. These included Berg Balance Scale (BBS), Functional Reach Test (FRT), and the Time Up & Go Test (TUG). Physiotherapists trained study subjects under the one-to-one supervision of students from the department of physical therapy. Circuit class study participants attended 90-minute treatment sessions, one day a week for 12 weeks (from September to December 2008). The program consisted of a light warm-up period (10 min), physical exercises for improving balance (20 min), tasks focused on improving balance (50 min) and a cool-down period (10 min). Results: Scores for the BBS assessment increased significantly (from 43.2 to 49.7) after the training (p<0.05). Reach distance on the FRT increased substantially (from 27.7 cm to 47.0 cm), although the improvement was not significant (p>0.05). The average time on the TUG test decreased significantly (from 23.7 sec to 19.5 sec) after the training (p<0.05). Conclusion: The task-related circuit training program improved the balance and mobility of subjects, indicating that such a group program is useful for stroke patients who are discharged from the hospital. More such task-related programs set in a community environment should be developed.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.144-149
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• 2003

Carbon tips were grown on Si cantilevers by applying an electron beam to them directly with Scanning Electron Microscope. A carbon tip was fabricated by aligning the electron beam directly down the vertical axis of Si cantilever and then irradiating a single spot on the cantilever for a proper time in the dominant atmosphere of residual gases generated by the oil of the diffusion pump. A number of control parameters for SEM, including exposure time, acceleration voltage, emission current, and beam probe current, were allowed to make various aspect ratio feature. The growth of carbon tips was not affected by the surface morphology of substrates. We could acquired the tip whose effective length is 0.5 $\mu\textrm{m}$, bottom diameter is 90 nm and cone half angle $3.5^{\circ}$ The growth technique of the high aspect ratio carbon tips on the tip-free cantilevers is available to reduce the complexities of fabricating sub-micron scale tips on the PZT thin film actuator integrated AFM cantilevers.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.8
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• pp.711-717
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• 2012

During the conceptual design phase of a light sport aircraft, the wind tunnel tests were conducted to investigate the static stability of newly-designed configuration. The 1/5 scale-down wind tunnel model consisted of fuselage, main wing, vertical tail and horizontal tail. The main wing and tails were able to be attached or detached from the fuselage. The aerodynamic forces and moments acting on the 6 different configurations compounding each component were measured by using the internal balance system and their static stability derivatives were derived. With these experimental data, the baseline lift and drag characteristics as well as the effects of each component to the longitudinal, directional and lateral static stability were quantitatively analyzed.