• Advances in environmental research
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• 제8권1호
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• pp.1-21
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• 2019

In the present study, analysis of contaminant transport through one dimensional unsaturated stratified media using element free Galerkin method has been presented. Element free Galerkin method is a meshfree method. A FORTRAN code has been developed for the same. The developed model is compared with the results available in the literature and are found in good agreement. Further a parametric study has been conducted to examine the effects of various parameters like velocity, dispersivity, retardation factor and effect of saturation on the contaminant flow. The results presented conclude that transport of contaminant is retarded in unsaturated zone in comparison with the saturated zone.

• Journal of Advanced Marine Engineering and Technology
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• 제17권2호
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• pp.36-43
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• 1993

Real quality and axial void fraction distribution of subcooled refrigerant flow is very important to predict the heat transfer rate and pressure drop in the design of refrigerating system. In the subcooled boiling region, the liquid bulk temperature is still below the corresponding saturation temperature. But beyond the net vapor generation point, bubble detachment is occured actively from the vapor layer formed on the wall. A reliable method to predict the vapor fraction from the liquid bulk temperature is suggested in this paper. And also the actual quality of the subcooled R-113 flow is calculated in the range of 261-1239kg/$m^2$s mass velocity and 10-30K subcooling.

• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2007년도 공동학술대회 논문집
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• pp.313-316
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• 2007

Ground-penetrating radar (GPR) is an effectiveness tool for imaging spatial distribution of hydrogeologic parameters. An artificial groundwater recharge test has been conducted in Nagaoka City in Japan, and time-lapse crosshole GPR data were collected to monitor infiltration processes in a vadose zone. Since radiowave velocities in a vadose zone are largely controlled by variations in water content, the increase in traveltimes is interpreted as an increase in saturation in the test zone. We use a finite-difference time-domain method in two-dimensional cylindrical coordinates to simulate field results. Numerical modeling successfully reproduces the major feature of velocity changes in the filtration process.

• 전자공학회논문지A
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• 제33A권3호
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• pp.89-95
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• 1996

In this ppaer, temeprature dependent transport and heat transport models have been incorperated to the two dimensional device simulator SNU-2D provides a solid bse for nonisothermal device simulation. As an example to study the nonisothermal problem. we consider SOI MOSFET's I-V characteristics have been simulated and compared with the measurements. It is shown that negative slopes in the Ids-Vds characteristics are casused by the temperature dependence of the saturation velocity and the degradation of the temperature dependence mobility. Also it is shown that the kink effect occurs when impact ionization near the drain produces a buildup of holes in this isolated device island, and the hysteresis is caused by the creation of holes in the channel and their flow to the source.

• 설비공학논문집
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• 제12권12호
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• pp.1081-1089
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• 2000

Evaporating heat transfer coefficients of R-22 and R-134a were measured in smooth horizontal copper tubes with inner diameters of 1.77, 3.36 and 5.35mm, respectively. The experiments were conducted in a closed loop, which was driven by a magnetic gear pump. Experiments were performed for the following range of variables: mass velocity (200 to 400 kg/$m^2$.s), saturation temperature($0^{circ}C,; 5^{\circ}C$) and quality(0 to 1.0). Main results obtained are as follows: evaporating heat transfer coefficients in the small diameter tubes (ID<7mm) were observed to be strongly affected by various diameters and to differ from those in the large diameter tubers. The heat transfer coefficients of the small diameter tubes were higher than those of the large diameter tubs. And it was very difficult to apply some well-known previous predictions (Shah`s, Gungor-Winterton`s and Kandlikar`s correlation) to small diameter tubes.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.53-57
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• 2012

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

• 대한전자공학회논문지
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• 제14권3호
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• pp.6-11
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• 1977

GaAs Schottky Barrier Gate 전계효과트랜지스터의 잡음동작을 잡음등가회로를 사용하여 연구하였으며, 부가구인 잡음근원은 pinch-off영역에서 GaAs FET bias에 의하여 구현되었다. 이것이 바로 intervalley 산란잡음과 hot electron에 의한 잡음이었다. 본 논문의 잡음등가회로에서는 carrier의 포화속도와 기생저항의 영향을 고려한 parameter를 정하였다.

• 대한전기학회논문지
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• 제37권9호
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• pp.609-618
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• 1988

본 논문에서는 전력 VDMOSFET를 2차원 수치해석하여 I_V특성을 구할 수 있는 computer program을 작성하였고 이 program에 의해서 전력 수직이중확산형 MOS(VDMOS)의 I-V 분포 특성, 전위 및 전자정공 농도 분포특성이 computer simulation되었다. 또 teansconductance, on-resistance 및 표면 이동도 model이 적용된 I_V특성이 simulation되어 실험값 및 선행연구자의 결과값과 비교되었다. 기본 방정식은 유한차등분법(F.D.M)에 의해서 해석되었고 Gummel이 알고리즘과 Mock의 식이 적용 되었다.

• 한국산학기술학회논문지
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• 제5권4호
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• pp.354-358
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• 2004

본 논문은 HEMT소자의 전류-전압특성을 해석적으로 모델링한 것으로 n-AlGaAs층의 전자농도를 고려하여 Gauss법칙과 비선형 전하제어모델을 이용하여 2DEG의 전자농도를 구하였고, 채널을 부분적으로 2차원적으로 해석하여 포화전압을 도출하였고, 계산된 결과는 n-AlGaAs의 전자농도를 고려하지 않은 결과와 비교하였을 때 비교적 정확한 전류전압특성을 보이고 있다

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2004년도 춘계학술대회
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• pp.158-161
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• 2004

In this study, an analytical model for I-V characteristics of an n-AIGaAs / GaAs Delta doped HEMT is proposed. The two-dimensional electron gas density and the conduction band edge profile are calculated from a self-consistent iterative solution of the Poisson equation. The parameters, which include the saturation velocity, two-dimensional electron gas concentration, thickness of the doped and undoped layer(AIGaAs, GaAs, spacer etc.,), are in good agreement with the independent calculations.