• 제목/요약/키워드: saturated formation

검색결과 190건 처리시간 0.03초

MDCK세포의 tight junction 형성이 Toxoplusmu gondii의 숙주세포 침투에 미치는 효과 (Tight junctional inhibition of entry of Toxoplasma gondii into MDCK cells)

  • 남호우;윤지혜
    • Parasites, Hosts and Diseases
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    • 제28권4호
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    • pp.197-206
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    • 1990
  • MDCK세포간에 형성된 tight junction이 Toxoplasma gondii이 숙주세포 침투에 미치는 영향에 대하여 고찰 하기 위해 여러 조건의 세포배양을 시행하였다. MDCK세포를 25-well배양기 내의 18-mm cover glass에 $1{\times}10^5,{\;}3{\times}10^5{\;}및{\;}5{\times}10^5$ 개로 분주한 후 배양 1, 2, 3 및 4일에 다수의 Toxoplasma를 첨가하여 1시간 동안 배양한 다음 Giemsa 용액으로 염색한 후 관찰하였을 때, 각 실험군에서 침투한 원충의 숫자는 숙주세포가 포화밀도를 이루면서 급격히 감소하였다. 배양액 내의 calcium 농도를 일반적인 1.8mM에서 $5{\;}{\mu}M$로 낮추어 포화밀도의 MDCK 세포간에 tight junction 형성을 억제하였을 때, 원충의 침투가 약 2배 증가하였으며(p<0.05) 포화밀도 이전의 배양에서는 원충의 침투가 감소하였다. Trypsin-EDTA를 처리하여 포화밀도의 배양에서 tight junction을 소화 시킨 경우, 원충의 침투가 약 2.5배 증가하였으며 (p<0.05) 포화밀도 이전의 배양에서는 급격히 감소하였다. 이상의 결과들로 볼 때, 포화밀도의 MDCK세포간에 형성된 tight junction이 Toxoplasma의 침투를 억제하는 것을 알 수 있었다. 이는 Toxoplasma가 숙주세포로 침투할 때 숙주세포의 막구조에 대한 특이성이 있음을 시사 하며, 상피세포에서는 tight junction 위의 막(apical membrane) 보다 옆 및 아래의 막(basolateral membrane)상의 구조를 이용하는 것으로 추정되었다.

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Electrical Switching Characteristics of Ge-Se Thin Films for ReRAM Cell Applications

  • Kim, Jang-Han;Nam, Ki-Hyun;Chung, Hong-Bay
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.343-344
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    • 2012
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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Resistive Memory Switching in Ge5Se5 Thin Films

  • Kim, Jang-Han;Hwang, Yeong-Hyeon;Chung, Hong-Bay
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.326-326
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    • 2014
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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전라남도(全羅南道) 해남층군(海南層群) 우항리층(牛項里層)에 흡재(夾在)된 흑색(黑色)셰일의 유기지구화학적(有機地球化學的) 연구(硏究) (Organic Geochemical Study on the Black Shales in U-hang-ri Formation, Hae-nam Group, Jeolla Nam-do, Korea)

  • 이대성;시마다 이쿠로;하야시다 노부오
    • 자원환경지질
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    • 제9권3호
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    • pp.157-163
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    • 1976
  • In this study, the oil bearing rock-sequence, U-hand-ri Formation (D.S. Lee et al., 1976), was subdivided into three members; the lower, the intermediate and the upper. The lower consists mainly of reddish purple tuff and sandy calcareous shales, the intermediate of an alternation of tuffs, sandstons, calcareous black shales, cherts and limestone and the upper of coarse grained variegated tuff and agglomerate. Oily matter was found from the black shales of the intermediate. Ten samples of black shales from drilled cores, 8 samples of black shales from different outcrops of the member, and 1 sample of grease-like seeping oil from black shales at U-hang-ri coast were chemically analyized. Among them, 9 samples contain remarkable amount of organic carbon (0.96~1.60%) and E.O.M. extract (0.176~0.718%), and mostly the bituminous material is saturated hydrocarbons as well as shown in infared spectroscopic analyses. The elemental analyses of MAE extracts and asphaltenes of some of thoese samples indicate that the transformation of organic material to crude oil is highly progressed. The authors suggest that the seeping oil and oily tinges in black shale layers are the products of natural cracking related with the igneous activities in the area nearby.

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느타리버섯 자실체의 부위 및 생육시기별 지방산 조성의 변화 (Changes of Fatty Acid Composition by Various Developmental Stage and Fruit Body Section in Pleurotus ostreatus)

  • 류영현;이숙희;조우식;윤재탁
    • 한국균학회지
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    • 제28권2호
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    • pp.109-111
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    • 2000
  • 느타리버섯(원형1호 느타리) 자실체의 부위별로 지방산 조성을 조사한 결과 linoleic acid는 갓부위에서 가장 높았고 대부위로 갈수록 낮아지는 경향이었고 stearic acid와 palmitic acid는 대부위로 갈수록 증가하는 경향이었다. 생육시기별 지방산조성은 oleic acid의 경우 버섯원기형성 후 $11{\sim}12$일 까지는 점차 증가하다가 이후부터는 감소하는 경향을 보였고 linoleic acid와 불포화지방산대비 포화지방산의 비율은 원기형성 후 $3{\sim}4$일까지는 증가하다가 그 후부터는 감소하는 경향을 나타내었다.

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Programmable Metallization Cell 응용을 위한 Ag-doped 칼코게나이드 박막의 전기적 저항 변화 특성 (Properties on Electrical Resistance Change of Ag-doped Chalcogenide Thin Films Application for Programmable Metallization Cell)

  • 최혁;구상모;조원주;이영희;정홍배
    • 한국전기전자재료학회논문지
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    • 제20권12호
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    • pp.1022-1026
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

이산화탄소 하이드레이트 슬러리의 생성 및 수송기술개발 (Development of Formation and Transportation Techniques for CO2-Hydrate Slurry)

  • ;윤린
    • 설비공학논문집
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    • 제29권7호
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    • pp.341-349
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    • 2017
  • Formation and transportation of $CO_2$-hydrate slurry was conducted by circulating saturated water with $CO_2$ through a double-tube type heat exchanger which was cooled down by brine. The inner diameter and circulation length of the heat exchanger were 1 inch and 20 m, respectively. Water in tank was supersaturated by injected $CO_2$ and the operation pressure was maintained at 3,000 to 4,000 kPa with fluid-temperature of less than $9^{\circ}C$. $CO_2$ hydrate mass fraction was calculated based on density of $CO_2$-hydrate slurry mixture. Results showed that the $CO_2$-hydrate slurry could be circulated without blockage for 1 hr. Circulation status of the $CO_2$-hydrate slurry was also visualized.

Programmable Metallization Cell(PMC) 소자에서 Ag와 칼코게나이드 박막의 두께에 따른 전기적 광학적 특성 (Electrical and Optical Properties on Thickness of Ag and Chalcogenide Thin Films at Programmable Metallization Cell Device)

  • 최혁;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.24-24
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

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SYNTHESIS OF METASTABLE ALLOYS BY ION MIXING IN THE BINARY METAL SYSTEMS AND THEORETICAL MODELLING

  • Liu, B.X.;Zhang, Z.J.;Jin, O.;Pan, F.
    • 한국진공학회지
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    • 제4권S2호
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    • pp.148-155
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    • 1995
  • (1) The metastable crystalline(MX) phases formed by ion mixing are classified into 5 types, i.e. the super-saturated solid solutions and the enlarged HCP-I phases reported earlier, and the newly observed FCC-I phases in hcp-based alloys, The FCC-ll and HCP-ll phases in bcc-based alloys. The growth kinetics of the MX phases is discussed. (2) The interfacial free energy in the multilayered films was found to play an important role in ion beam mixing(IM) induced amorphization. By adding sufficient interfaces, amorphous alloys were obtained even in the systems with rather positive heat of formation. (3) Gibbs free energy diagrams of some representative systems were constructed, by calculating the free energy curves of all the competing phases. Steady-state thermal annealing was conducted and the results confirmed the relevance of the constructed diagrams, which were inturn employed to interpret the MX phase formation as well as the glass forming ability upon IM in the binary metal systems.

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Brown Oxide 형성이 리드프레임/EMC 계면의 파괴인성치에 미치는 영향 (Effect of Brown Oxide Formation on the Fracture Toughness of Leadframe/EMC Interface)

  • 이호영;유진
    • 한국표면공학회지
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    • 제32권4호
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    • pp.531-537
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    • 1999
  • A copper based leadframe was oxidized in brown-oxide forming solution, then the growth characteristics of brown oxide and the effect of brown-oxide formation on the adhesion strength of leadframe to epoxy molding compound (EMC) were studied by using sandwiched double cantilever beam (SDCB) specimens. The brown oxide is composed of fine acicular CuO, and its thickness increased up to ~150 nm within 2 minutes and saturated. Bare leadframe showed alomost no adhesion to EMC, while once the brown-oxide layer formed on the Surface of leadframe, the adhesion strength increased up to ~80 J/$\m^2$ within 2 minutes. Correlation between oxide thickness, $\delta$ and the adhesion strength in terms of interfacial fracture toughness, $G_{c}$ was linear. Considering the above results, we might conclude that the main adhesion mechanism of brown-oxide treated leadframe to EMC is mechanical interlocking, in which fine acicular CuO plays a major role.e.

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