• Korean Journal of Optics and Photonics
• /
• v.28 no.4
• /
• pp.153-157
• /
• 2017

An infrared camera and laser common-path optical system is applied to DIRCM (directional infrared countermeasures), to increase boresighting accuracy and decrease weight. Thermal effects of a laser beam in a common-path optical system are analyzed and evaluated, to predict any degradation in image quality. A laser beam with high energy density is absorbed by and heats the optical components, and then the surface temperature of the optical components increases. The heated optical components of the common-path optical system decrease system transmittance, which can degrade image quality. For analysis, the assumed simulation condition is that the laser is incident for 10 seconds on the mirror (aluminum, silica glass, silicon) and lens (sapphire, zinc selenide, silicon, germanium) materials, and the surface temperature distribution of each material is calculated. The wavelength of the laser beam is $4{\mu}m$ and its output power is 3 W. According to the results of the calculations, the surface temperature of silica glass for the mirror material and sapphire for the lens material is higher than for other materials; the main reason for the temperature increase is the absorption coefficient and thermal conductivity of the material. Consequently, materials for the optical components with high thermal conductivity and low absorption coefficient can reduce the image-quality degradation due to laser-beam thermal effects in an infrared camera and laser common-path optical system.

• Electrical & Electronic Materials
• /
• v.9 no.1
• /
• pp.30-37
• /
• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• Journal of Korean Ophthalmic Optics Society
• /
• v.3 no.1
• /
• pp.237-242
• /
• 1998

A transparent and colorless $80SiO_2-20TiO_2$(mol%) thin films on soda-lime-silica slide glass and sapphire substrate were obtained by spin-coating technique using tetraethyl orthosilicate and titanium trichloride as starting materials. The prepared film annealed at $750^{\circ}C$ showed a high transmittance and a low reflectance. For the $SiO_2-TiO_2$ films on slide glasses, a strong interaction between the sodium ion and oxygens is properbly the origin of the good stability to the high temperature and the high humidity.

• Journal of Magnetics
• /
• v.13 no.1
• /
• pp.19-22
• /
• 2008

ZnO nanotips, grown on c-$Al_2O_3$ and quartz, were implanted variously with 200 keV Fe or Mn ions to a dose level of $5{\times}10^{16}cm^{-2}$. The magnetic properties of these samples were measured using a superconducting quantum interference device (SQUID) magnetometer. Fe-implanted ZnO nanotips grown on c-$Al_2O_3$ showed a coercive field width of 209 Oe and a remanent field of 12% of the saturation magnetization ($2.3{\times}10^{-5}emu$) at 300K for a sample annealed at $700^{\circ}C$ for 20 minutes. The field-cooled and the zero-field-cooled magnetization measurements also showed evidence of ferromagnetism in this sample with an estimated Curie temperature of around 350 K. The Mn-implanted ZnO nanotips grown on c-$Al_2O_3$ showed superparamagnetism resulting from the dominance of a spin-glass phase. The ZnO nanotips grown on quartz and implanted with Fe or Mn showed signs of ferromagnetism, but neither was consistent.

• Korean Journal of Optics and Photonics
• /
• v.17 no.1
• /
• pp.75-80
• /
• 2006

We studied feasibility of three-dimensional optical memory by utilizing femtosecond laser-induced changes of transmission in photopolymers and photoluminescence in Eu and Sm ion doped sodium borate glasses. We produced transmission change by two photon absorption and obtained sub-Um size spots in photopolymers using 780 nm modelocked Ti-sapphire laser pulses. We also changed valence state of Eu and Sm ions by multi-photon absorption and achieved $\~{\mu}m$ sized spot formation in Sm-doped glasses.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.44-44
• /
• 2003

Growth mechanism of carbon nanotubes(CNTs) synthesized by chemical vapor deposition is abided by two growth modes. These growth modes are classified by the position of activated catalytic metal particle in the CNTs. Growth mode can be also affected by interaction between substrate and catalytic metal and induced energy such as thermal and plasma. We studied the reaction of catalytic metal to the substrate and growth mode of CNTs. Various substrates such as Si(100), graphite plate, coming glass, sapphire and AAO membrane are used to study the relation between catalytic metal and substrate in the synthesis of CNTs. For catalytic metal, thin film was deposited on various substrate via sputtering technique with a thickness of ∼20nm and magnetic fluids with none-sized particles were dispersed on AAO membrane. After laying process on AAO membrane, it was dried at 80$^{\circ}C$ for 8 hour. Synthesizing of CNTs was carried out at 900$^{\circ}C$ in NH3/C2H2 mixture gases flow for 10minutes.

• Journal of the Korean Magnetics Society
• /
• v.14 no.1
• /
• pp.52-57
• /
• 2004

In this research, characteristics of air core rectangular spiral type inductors of ㎓ band are numerical analyzed. The basic structure of inductors is a rectangular spiral having 390${\mu}{\textrm}{m}$${\times}$390${\mu}{\textrm}{m}$ size, 5.5 turns, line width of 10 ${\mu}{\textrm}{m}$ and line space of 10 ${\mu}{\textrm}{m}$. Frequency characteristics were simulated up to 10 ㎓. The substrate was modeled as Si, Sapphire, glass and GaAs and the conductor as Cu. The thickness of the conductor was fixed at 2. The number of turns was n.5 to make the input and output terminals to be on the opposite sides. The initial inductance of the basic inductor structure was 13.0 nH, maximum inductance 60.0 nH and resonance frequency 4.25 ㎓. As the dielectric constant of the substrate was increased, the initial inductance varied only slightly, but the resonance frequency decreased considerably. As the number of turns was varied from 1.5 to 9.5, the initial inductance was increased linearly from 2.9 nH to 15.9 nH and, then, saturated at 16.9 nH. The Q factor increased only slightly. The line width and line space of inductors were varied from 5 ${\mu}{\textrm}{m}$ to 20 ${\mu}{\textrm}{m}$, which resulted in the decrease of the initial and maximum inductances. But the resonance frequency was increased. Q factor displayed an increase and a decrease, respectively, when the line width and line space were increased.

• Korean Journal of Optics and Photonics
• /
• v.12 no.3
• /
• pp.219-224
• /
• 2001

Spectral phase interferometry for direct electric-field reconstruction (SPIDER) was fabricated and used to characterize pulses from a Ti:sapphire oscillator. In the SPIDER apparatus, two replicas of the input pulse were generated with a time delay of 200 fs and were upconverted by use of sum-frequency generation with a strongly chirped pulse using a 8-cm-long SFIO glass block at a 30-11m-thick type II BBO (p-BaBz04) crystal. The resulting interferogram was recorded with a UV-enhanced CCD array in the spectrometer. The spectral phase was retrieved by SPIDER algorithm in combination with independently measured pulse spectrum and the corresponding temporal intensity profile was reconstructed with a duration of 19 fs. As an independent cross-check of the accuracy of the method, we compared the interferometric autocorrelation (lAC) signal calculated from the SPIDER data with a separately measured lAC. The conventional, but unjustified, method of fitting a sechz pulse to the autocorrelation deceivingly yielded a pulse duration of 15 fs. This systematic underestimation of the pulse duration affirms the need for a complete characterization method. From the consideration in this paper, we concluded that the SPIDER could provide an accurate characterization of femtosecond pulses. ulses.

• Korean Journal of Materials Research
• /
• v.15 no.8
• /
• pp.518-520
• /
• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.16 no.6
• /
• pp.1-6
• /
• 2017

Recently, the brittle materials such as ceramics, glass, sapphire and textile material have been widely used in semiconductors, aerospace and automobile owing to high functional characteristics. On the other hand, it has the characteristics of difficult-to-cut material relative to all materials. In this study, diamond electro-deposited band-saw machine was developed to operate stably using water-coolant type through relative motion between band-saw tool and $Al_2O_3$ material. High densified $Al_2O_3$ material was manufactured by spark plasma sintering method. The bulk density was observed by the Archimedes law and the theoretical density was estimated to be $3.88g/cm^3$ and its hardness 14.7 MPa. From the dicing sawing test of $Al_2O_3$ specimen, behavior of surface roughness and band-saw wear are dominantly affected by the increase of the band-saw linear velocity. Additionally, an continuous pattern type of diamond band-saw was a very effective due to entry impact as a one-off for brittle material.