• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.265-271
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• 2013

Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal for LED application. In this study, the inductively-heated CZ growth processes for the sapphire crystal of 300 mm length have been analyzed numerically using finite element method. The hot zone structures were modified with the crucible geometry change and the additional insulation layer installed above the crucible. The results show that the solid-liquid interface height decreased from about 80 mm at initial stage to 40 mm after mid-stage due to achieve the growth speed balance. Also the optimal input power of the modified system was similar with the original one due to the compensation effects of the crucible geometry and additional insulation. The crystal temperature grown by the modified CZ grower was increased about 10 K than the original one. Therefore the sapphire crystal of 300 mm height was grown successfully.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.98-104
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• 2013

$VO_2$ is an attractive thermochromic material, in which its electrical and optical properties can be switched by the structural phase-transition about $68^{\circ}C$. Recently, graphene is also a rising material which is researched as a transparent electrode because of its superior electrical and optical characteristics. In this respect, we try to fabricate the hybridized films using $VO_2$ and graphene on transparent sapphire substrate and then we investigate a structure and characterize an optical property for the samples as a function of temperature. According to the result of IR-transmittance analysis of $VO_2$ films as a function of temperature, the graphene-supported sapphire substrates are better about 10% than the bare sapphire substrates. The mean phase transition temperatures are also decreased as the number of graphene-layers increased and the hysteresis of phase transitions are narrowed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.89-94
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• 2016

In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.173-178
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• 2019

In this study, we demonstrated a characterization of ${\alpha}-Ga_2O_3$ grown on a cone-shape patterned sapphire substrate by using the halide vapor phase epitaxy. An ${\alpha}-Ga_2O_3$ was grown on different size of PSS and c-plane sapphire substrate for comparison to confirm the effect of PSS. In addition, growth time of ${\alpha}-Ga_2O_3$ was gradually increased to confirm growth mechanism of ${\alpha}-Ga_2O_3$ grown on the PSS. A growth temperature was changed to $470-550^{\circ}C$. It can be analyzed growth conditions and mechanisms on the cone-shape PSS, resulting in a significant decrease in the FWHM value of an asymmetric plane (10-14) of ${\alpha}-Ga_2O_3$, due to lateral growth that occurs during the growth process.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.32-33
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• 1997

• Proceedings of the Korean Society of Laser Processing Conference
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• 2003.05a
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• pp.14-17
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• 2003

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.268-269
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• 2001

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.72-73
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.119-119
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• 1998

• Journal of the Optical Society of Korea
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• v.2 no.2
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• pp.50-53
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• 1998

We report on the spectroscopic investigation of optical-field ionized plasmas in the soft X-ray spectral region. The experiment was carried out by focusing pulses of the high-power Ti:Sapphire laser with an energy of ~ 40 mJ and time duration of ~30 fs into a gas jet of krypton, xenon, and argon from a pulsed nozzle. Strong soft X-ray emission on lines from ionic stages of $Kr^{7+} , Kr^{8+} , Xe^{7+} , Ar^{7+} , and Ar^{8+}$ is reported. The experimental result was found to be in good agreement with theoretical prediction.