• Journal of Sensor Science and Technology
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• v.32 no.5
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• pp.328-333
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• 2023

This study experimentally verified the etch rate of the SiO₂ sacrificial layer etching process with a single etch hole using vapor-phase hydrogen fluoride (VHF) etching. To fabricate small-sized polysilicon etch holes, both circular and triangular pattern masks were employed. Etch holes were fabricated in the polysilicon thin film on the SiO₂ sacrificial layer, and VHF etching was performed to release the polysilicon thin film. The lateral etch rate was measured for varying etch hole sizes and sacrificial layer thicknesses. Based on the measured results, we obtained an approximate equation for the etch rate as a function of the etch hole size and sacrificial layer thickness. The etch rates obtained in this study can be utilized to minimize structural damage caused by incomplete or excessive etching in sacrificial layer processes. In addition, the results of this study provide insights for optimizing sacrificial layer etching and properly designing the size and spacing of the etch holes. In the future, further research will be conducted to explore the formation of structures using chemical vapor deposition (CVD) processes to simultaneously seal etch hole and prevent adhesion owing to polysilicon film vibration.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.17-20
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• 2001

In this paper, film bulk acoustic resonator(FBAR) with an air-gap is fabricated by removing ZnO sacrificial layer and its characteristics as a various dimension of ZnO sacrificial and piezoelectric layer is evaluated. The center frequency of the FBAR device with the ZnO film is about 1.9 GHz. Because of mass-loading effect, a dimension of sacrificial layer and piezoelectrc layer affect frequency response such as center frequency, insertion loss, band separation, attenuation and so on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.187-188
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• 2005

In this paper, big free standing metal structures for electrostatic MEMS switches are easily fabricated using photoresist sacrificial layer. The entire process sequence, through the removal of the sacrificial layer, is kept below 150 $^{\circ}C$ to avoid curing problem of photoresist sacrificial layer. Metal structure is fabricated by thermal evaporator and a self test electrode is fabricated underlying metal suspended structure for testing by electrostatic force. The new wet release process is considered using methanol rinse, general wet release process cause stiction problem by capillary force during drying, and the yield is dramatically improved than previous wet release process using DI water rinse. The fabrication becomes much simpler and cheaper with use of a photoresist sacrificial layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.435-439
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• 2016

We developed a Ag nanowire patterning technique using a water-soluble sacrificial layer. To form a water-soluble sacrificial layer, germanium was deposited on the substrate and then water-soluble germanium oxide was simply formed by thermal oxidation of germanium using a conventional furnace. The formation of Ag nanowire patterns with various line and space arrangements was successfully demonstrated using this patterning process. The main advantage of this patterning technique is that it does not use a strong acid etchant, thereby preventing damage to the Ag nanowire during the patterning process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.725-730
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• 1996

The key process in silicon surface micromachining is the selective etching of a sacrificial layer to release the silicon microstructure. The newly developed anhydrous HF/$CH_3$OH gas phase etching of TEOS (teraethylorthosilicate) sacrificial layers onto the polysilicon and the nitride substrates was employed to release the polysilicon microstructures. A residual product after TEOS etching onto the nitride substrate was observed on the surface, since a SiOxNy layer is formed on the TEOS/nitride interface. The polysilicon microstructures are stuck to the underlying substrate because SiOxNy layer does not vaporize. We found that the only sacrificial etching without any residual product and stiction is TEOS etching onto the polysilicon substrate.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.71-77
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• 1996

Considering that polycrystalline silicon, a structural material of the micromachining, is affected by a sacrificial oxide layer, the poly-oxide obtained by the thermal oxidation of polycrystalline silicon is newly proposed and estimated as the sacrificial oxide layer. The grain size of the polycrystalline silicon grown on the poly-oxide is larger than that of poly crystalline silicon grown on the conventional sacrificial oxide layer. As a result of XRD, increase of (111) textures and formation of additional (220) textures are observed on the polycrystaIline silicon deposited on the poly-oxide. Also, the polycrystalline silicon grown on the poly-oxide represents small and uniform stress.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.233-238
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• 2010

Hot-dipped Al-Mg-Si coatings to alternate Zn and Zn alloy coatings for steel were examined on metallographic structure, corrosion resistance, sacrificial ability, formation and growth of inter-metallic compounds, and mechanical properties. Near the eutectic composition of quasi-binary system of Al-$Mg_2Si$, very fine eutectic structure of ${\alpha}$-Al and $Mg_2Si$ was obtained and it showed excellent corrosion resistivity and sacrificial ability for a steel in sodium chloride solutions. Formation and growth of Al-Fe inter-metallic compounds at the interface of substrate steel and coated layer was suppressed by addition of Si. The inter-metallic compounds layer was usually brittle, however, the coating layer did not peel off as long as the thickness of the inter-metallic compounds layer was small enough. During sacrificial protection of a steel, amount of hydrogen into the steel was more than ten times smaller than that of Zn coated steel, suggesting to prevent hydrogen embrittlement. Al-Mg-Si coating is expected to apply for several kinds of high strength steels.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.2001-2003
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• 1996

In this study, Allied Signal 211 SOG was used as a sacrificial material. After researching its etching properties, we adapted it to bottom-drive micrometers. SOG was superior etch rate and roughness to them of PSG or CVD-oxide and possible to low-temperature processing. Etching properties of SOG depended on the temperature and duration of its bake and cure. SOG used in the fabrication of bottom-drive micrometers showed us usefulness as a sacrificial layer and haying a least influence on machines on it in comparison with conventional sacrificial materials.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.8
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• pp.577-579
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• 1999

DLC film remaining on device surface could be removed by eliminating AI sacrificial layer as a final step of lift-off process in the fabrication of DLC-coated Si-tip FEA. The field emission properties(I-V curves, hysteresis, and current fluctuation etc.) of the processed device were analyzed and the process was employed to 1.76 inch-sized FEA panel fabrication in order to evaluate its FED applicability.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.167-168
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• 2013