• 한국재료학회지
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• 제25권1호
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• pp.16-20
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• 2015

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of $120{\mu}m$, $130{\mu}m$, $140{\mu}m$. Formation of the Al doped $p^+$ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped $p^+$ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of $5.34mg/cm^2$ of Al paste, wafer bowing in a thickness of $140{\mu}m$ reached a maximum of 2.9 mm and wafer bowing in a thickness of $120{\mu}m$ reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped $p^+$ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is $4.72mg/cm^2$ in a wafer with a thickness of $120{\mu}m$.

• 소성∙가공
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• 제14권8호통권80호
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• pp.712-717
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• 2005

Microstructure and mechanical properties are investigated for 0.15C-1.5Mn-1.5Al TRIP aided cold rolled steels containing $0.05wt\%P$ and $0.1wt\%P$. Despite of the complete replacement of Si by Al, the TRIP steel shows tensile strength of 700MPa and total elongation of $35\%$ by addition of $0.1wt\%$ P. Tensile strength of P added TRIP steels is not only affected by the solid solution hardening but also the volume fraction of retained austenite. As P content increases from $0.05wt\%$ to $0.1wt\%$, tensile strength and volume fraction of retained austenite are increased, but elongation is decreased. The lower stability of austenite in $0.1wt\%$ P added steel is responsible for the decrease of the elongation.

• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• 전자공학회논문지A
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• 제30A권10호
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• 한국세라믹학회지
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• 제45권5호
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• pp.297-302
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• 2008

To direct the evolution of nanostructure and immobilize ${\gamma}-Al_2O_3$ catalyst, nanocrystalline La-doped-$Al_2O_3$ powder were prepared by the sol-gel process with addition of an amphiphilic block copolymer template (pluronic P123: $(poly(ethyleneoxide)_{20}-poly(propyleneoxide)_{70}-poly(ethyleneoxide)_{20})$. The dried gel is amorphous, whereas heating at temperature above $700^{\circ}C$ leads to the formation of nanocrystalline ${\gamma}$ and ${\delta}-Al_2O_3$ and these two phases is kept until $1100^{\circ}C$. ${\alpha}-A1_2O_3 $starts to form at $1200^{\circ}C$ with $LaAl_{11}O_{18}$. The surface morphology and crystal structure has been observed by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD). Solid state $^{27}Al$ MAS NMR indicates two types of local environment, i.e. octahedral and tetrahedral sites. The surface area and pore size was compared among these powders using the BET nitrogen adsorption measurements.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• 제2권2호
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• pp.149-158
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• 1998

Biomass of non-living brown seaweed Sargassun fluitans pretreated with NaOH is capable of taking up more than $10\%$ $(q_{max}$ : 3.85 mmol/g for Al and 1.48 mmol/g for Cu) of its dry weight in the Al and Cu at pH of 4.5. However, the maximum Al and Cu uptakes calculated from Langmuir isotherm were 1.58 mmol/g for Al and 1.35 mmol/g for Cu at pH 3.5. Equilibrium batch sorption study was performed using two-metal system containing Al and Cu. The mathematical model of the two-metal sorption system enabled quantitative estimation of one-metal biosorption inhibition due to the influence of a second metal. NaOH-treated S. fluitans contained 2.19 mmol $(43\;wt.\%)$ carboxyl groups per gram of biomass. A modified form of Langmuir, which assumes binding of Cu as $Cu^{2+}$ and Al as $Al(OH)_2^+,$ was used to model the experimental data. This result agrees with the one of mono-valent sorption for Al in single-metal system. The modified Langmuir model gives the following affinity correlated coefficients: 0.196 for Cu and 6.820 for Ah at pH 4.5, and 2.904 for Cu and 3.131 for Al at pH 3.5. The interference of Al in Cu biosorptive uptake was assessed by `cutting' the three dimensional uptake isotherm surfaces at constant second-metal final concentrations. Equimolar final equilibrium concentrations of Cu and Al of 1 mM at pH 4.5 give Cu and hi uptakes reduced by $82.5\%\;and\;5.4\%,$ respectively. However, these values at pH 3.5 were $55\%\;(Cu)\;and\;31\%$ (Al).

• 한국미생물·생명공학회지
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• 제10권3호
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• pp.191-196
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• 1982

미곡저장중 균류에 의한 미곡의 손실을 방지하기 위하여 1978년 12월 부터 1979년 6월까지 7개월간 싸일로, 평창고 및 통가리에 저장한 미곡시료(밀양23호)에서 균류를 분리, 동정하였다. 한국산 벼 및 현미에서 분리된 30종의 균류중, Aspergillus속 11종(A. caespitosus, A. condidus, A. chevalieri, A fischeri, A. fumigatus, A. fiavus, A. nidulans, A. oryzae, A. ruber, A. sydowii, A. versicolor), Penicillium 속 5 종 (P. atramentosum P. chrysogenum, P. cyaneofulvum, P. nototum, P. steckii), Alternaria 속 2종 (Al. faesiculata, Al. grisea) Curvalaria 속 2종 (C, interseminata, C. tetromea), Trichothecium roseum, Nigrospora sphaerica, Rhizopus nigricans, Fusarium spp., Mucor spp., Helminthosporium spp., 및 Gliocladiopsis spp. 각 1종, 총 27종이 동정, 확인되었다. 한국산 벼에서 분리된 표면균류는 A. flavus와 A. candidus가 대부분이었으며, 현미에서는 A. sydowii가 많이 출현하였다. 또한 저장중 변질미에는 A. candidus, A. versicolor 및 A. glaucus group들이 주로 많았다.

• 한국광물학회지
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• 제13권4호
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• pp.186-195
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• 2000

To study phosphate adsorption on kaolinite, $^{31}$ P MAS NMR(magic angle spinning nuclear magnetic resonance spectroscopy)has been used for kaolinite reacted in 0.1 M phosphate solutions at pH’s from 3 to 11. There are at least 3 different forms of phosphate on kaolinite. One is the phosphate physically adsorbed on kaolinite surface (outer-sphere complexes) or species left after vacuum-filtering. The second is the phosphate adsorbed by ligand exchange (inner-sphere complexes), and the third is Al-phosphate precipitates which are pH dependent. Most of the inner-spherer complexes and surface precipitates are mainly on hydroxided Al(aluminol) rather than hydroxided Si(silanol). These are pertinent with the results obtained from the phosphate adsorption experiments on silica gel and ${\gamma}$-Al$_2$O$_3$ as model compounds, respectively. The two peaks with more negative chemical shifts(more shielded) than the ortho-phosphate peak (positive chemical shift) are assigned to be the inner-sphere complexes and surface precipitates. The $^{31}$ P chemical shifts of the Al-phosphate precipitates are more negative than those of inner-sphere complexes at a given pH due to the larger number of P-O-Al linkages per tetrahedron. The chemical shifts of both the inner-sphere complexes and surface precipitates are more negative than those of inner-sphere complexes at a given pH due to the larger number of P-O-Al linkages per tetrahedron. The chemical shifts of both the inner-sphere complexes and surface precipitates become progressively less shielded with increasing pH. For the inner-sphere complexes, decreasing phosphate protonation combined with peak averaging by rapid proton exchange among phosphate tetrahedra with different numbers of protons is though to be the reason for the peak change. The decreasing shielding with increasing pH for surface precipitates is probably due to the decreasing average number of P-O-Al linkages per tetrahedron combined with decreasing protonation like inner-sphere complexes.

• Advances in materials Research
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• 제5권4호
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• pp.263-277
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• 2016

Mechanical properties of $Al/Al_2O_3$ and $Al/B_4C$ composites prepared through powder metallurgy are estimated up to 50% $Al_2O_3$ and 35% $B_4C$ weight fractions using micromechanics models and experiments. The experimental Young's modulus up to 0.40 weight fraction of ceramic is found to lie closely between Ravichandran's/Hashin-Shtrikman lower/upper bounds, and close to self consistent method/Miller and Lannutti method/modified rule of mixture/fuzzy logic method single value predictions. Measured Poisson's ratio lies between rule of mixture/Ravichandran lower and upper bound/modified Ravichandran upper bounds. Experimental Charpy energy lies between Hopkin-chamis method/equivalent charpy energy/Ravichandran lower limit up to 20%, and close to the reciprocal rule of mixture for higher $Al_2O_3$ content. Rockwell hardness (RB) and Micro-hardness of $Al/Al_2O_3$ are closer to modified rule of mixture predictions.

• Transactions on Electrical and Electronic Materials
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• 제9권2호
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).