• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.363-366
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• 2004

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.17-22
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• 2006

Ferroelectric PZT thin films were formed by 2-step sputtering and their dielectric properties and conduction mechanisms were investigated. Also. donor impurity doping was tried to compensate the carriers in PZT thin films. The leakage current density was able to reduce to $10^{-7}A/cm^2$ order by 2-step sputtering with thickness control of room temp.-layer. The conduction mechanism was confirmed as bulk-limited, and optimum donor impurities on PZT thin film were taken. Especially, leakage current characteristics was improved to $10^{-8}A/cm^2$ order in donor-doped PZT thin films formed by 2-step sputtering.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.91-97
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• 2004

PBT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk-PZT target containing $5\%$-excess PbO was used. After PZT thin films had been deposited at room temperature, remaining portion of the thin film was formed by in-situ process. The ferroelectric perovskite phase was formed at $650^{\circ}C$. The leakage current property was improved dramatically by 2-step sputtering, and in the sample containing optimum thickness of room temp.-layer very low leakage current of $2{\times}10^{-7}A/cm^2$ was shown. As a result of the investigation on the leakage current mechanism, the electrical conduction mechanism in all PZT thin films formed by several conditions was confirmed as bulk-limited mechanism.