• 비파괴검사학회지
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• 제24권4호
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• pp.307-314
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• 2004

배관의 축방향 균열 검사를 위하여 원주 방향으로 진행하는 유도초음파 모드를 적용하였다. 배관의 곡률을 변수로 원주 유도초음파의 분산선도를 계산하였으며 이를 배관 검사에 적용하기 위하여 중수로 피더관의 곡관부 축방향 균열을 탐지에 적용하였다. 상대적으로 낮은 주파수에서는 Lamb 파 특성을 따르나 주파수가 증가함에 따라 평판의 경우, 즉 곡률이 무한대인 경우 첫 번째 $A_0$ 모드와 두 번째 $S_0$ 모드가 합쳐져서 Rayleigh 모드 형태로 변화한다. 한편 곡률을 가진 배관의 경우는 주파수가 증가하더라도 첫 번째 모드와 두 번째 모드가 합쳐지지 않았다. 이러한 해석을 기초로 하여 배관의 일종인 중수로 피더관 곡관부 축방향 결함을 탐지하기 위하여 사각 탐촉자를 사용하여 Rocking 원주 유도초음파 기법을 적용하였다. 원주 방향으로 유도파를 진행시키면서 인공 결함으로부터의 수집된 신호를 분석하여 진동 모드를 확인하였으며 두께 대비 10% 깊이의 notch도 검출할 수 있음을 확인할 수 있었다.

• 한국지진공학회:학술대회논문집
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• 한국지진공학회 2001년도 춘계학술대회 논문집
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• pp.312-319
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• 2001

The purpose of this study is to evaluate the strength of piers subjected to earthquake ground motion. In particular, the piers of an unreinforced masonry wall under in-plane seismic loading are considered with emphasis. For this purpose, several pier strength equations in seismic rehailitation provisions such as UCBC, FEMA 178, FEMA 273, and FEMA 306 are compared. This strength equations in different provision are applied for calculating the strength of a pier in building. According to the results of this study, it is shown that the assessment procedure based on FEMA 178 overestimated pier strengths comparing to other provisions when all piers are in Rocking-controlled mode.

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 2006년도 춘계학술발표회 논문집(I)
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• pp.210-213
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• 2006

The objectives of this study is to find out the relationship of crack width and residual seismic capacity of Unreinforced Masonry(URM) walls which were damaged by earthquake. Three URM walls which made the shape ratio(1/h, 1.0, 1.5, 2.0)to be a variable were tested for the objective. It was seen that the crack width increased with growing at rotation angle. Also, this study found out that failure mode affects crack type of URM. In other words, horizontal and vertical crack was increased in rocking and sliding failure mode respectively.

• 한국공작기계학회논문집
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• 제11권6호
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• pp.111-117
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• 2002

The high quality and a nearly stoichometric growth of $Cd_{1-y} Zn_y$/Te(y＝0.04) epilayers have been successfully grown on GaAs substrate by hot wall epitaxy (HWE) by optimizing the growth condition including the preheating treatment and Cd reservoir temperature. The relationship between quality and thickness was examined and best value of FWHM from X-ray rocking curve of 121 arcsec are obtained. Also, emission peaks related to the recombination of free excitons such as the ground state and the first excited state were observed in the PL spectrum at 4.2K. The ($A^0$, X) emission related to Cd vacancy and deep level emission was not measured. These results indicated that the grown CZT/GaAs epilayer was high qualify and purity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.281-287
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• 2002

The stochiometric composition of AgGaS$_2$ polycrystal source materials for the AgGaS$_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$0/ and c$\sub$0/ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. AgGaS$_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}$ : 8.695${\times}$10$\^$-4/ eV/K, and ${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$/GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.56-59
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• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• 한국결정성장학회지
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• 제8권2호
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• pp.211-220
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• 1998

수평 전기로에서 $AgGaS_2$ 다결정을 합성하여 HWE 방법으로 $AgGaS_2$ 단결정 박막을 성장하였다. $AgGaS_2$ 단결정 박막을 성잘할 때 증발원과 기판의 온도를 각각 $590^{\circ}C$, $440^{\circ}C$로 성장하였을 때 이중결정 X-선 요동곡선(double crystal X-ray diffraction rocking curve, DCRC)의 반폭치(FWHM)값이 124 arcsec로 가장 작아 최적 성장조건이었다. 상온에서 $AgGaS_2$ 단결정 박막의 광흡수 특성으로부터 에너지 띠간격이 2.61cV였다. Band edge에 해당하는 광전도도 peak의 온도 의존성은 Varshni 관계식으로 설명되었으며, Vaeshni 관계식의 상수값은 Eg(0) = 2.7284eV, $\alpha$= 8.695$\times$10-4 eV/K, $\beta$= 332K 로 주어졌다. 광발광 봉우리는 20K에서 414.3nm(2.9926eV)와 414.1nm(2.7249eV)는 free exciton(Ex)의 upper polariton과 lower polariton인 {{{{{E}`_{x} ^{u} }}}}와 {{{{{E}`_{x} ^{L} }}}}, 423.6nm(2.9269eV)는 bound exciton emission에 의한 I로 관측되었다. 또한 455nm(2.7249eV)의 peak는 donor-acceptor pair(DAP)에 기인하는 광발광 봉우리로 관측되었다.

• 한국결정학회지
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• 제11권4호
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• 한국결정성장학회지
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• 제10권3호
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• pp.252-257
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• 2000

성장 전 GaAs기판의 열에칭 온도 변화에 따른 ZnS 에피층의 특성을 최초로 조사하기 위하여 450~$660^{\circ}C$로 열에칭한 기판 위에 hot wall epitaxy법으로 ZnS 에피층을 성장하였다. ZnS 에피층의 이중결정요동곡선의 반치폭은 기판의 열에칭 온도가 50$0^{\circ}C$와 $600^{\circ}C$일 때 가장 작았다. 그러나 ZnS 에피층의 photoluminescence(PL)특성은 기판의 열에칭 온도가 $500^{\circ}C$ 보다는 $600^{\circ}C$에서 더 양호하였다. 그러므로 고품질의 ZnS 에피층을 성장하기 위한 GaAs기판의 최적 열에칭 온도는 $600^{\circ}C$임을 알았다. 이러한 결과로부터 GaAs 기판의 열에칭은 $600^{\circ}C$에서 ZnS 에피층의 결정성과 PL특성에 좋은 영향을 주는 것으로 확인되었다.

• Structural Engineering and Mechanics
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• 제40권4호
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• pp.517-539
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• 2011

This paper presents the seismic responses of a 1:5-scale five-story reinforced concrete building model, which represents a residential apartment building that has a high irregularity of weak story, soft story, and torsion simultaneously at the ground story. The model was subjected to a series of uni- and bi-directional earthquake simulation tests. Analysis of the test results leads to the following conclusions: (1) The model survived the table excitations simulating the design earthquake with the PGA of 0.187 g without any significant damages, though it was not designed against earthquakes; (2) The fundamental mode was the torsion mode. The second and third orthogonal translational modes acted independently while the torsion mode showed a strong correlation with the predominant translational mode; (3) After a significant excursion into inelastic behavior, this correlation disappeared and the maximum torsion and torsion deformation remained almost constant regardless of the intensity of the two orthogonal excitations; And, (4) the lateral resistance and stiffness of the critical columns and wall increased or decreased significantly with the large variation of acting axial forces caused by the high bi-directional overturning moments and rocking phenomena under the bi-directional excitations.