• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.124-128
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• 2001

We apply for the first time a low cost and loss wafer level packaging technology for RF-MEMS device. The proposed structure was simulated by finite element method (FEM) tool (HFSS of Ansoft). S-parameter measured of the package shows the return loss (S11) of 20dB and the insertion loss (S21) of 0.05dB.

• Journal of Software Assessment and Valuation
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• v.15 no.1
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• pp.109-114
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• 2019

In this paper, simulations of S-parameter and characteristic impedance for the probe pin are performed and its high-frequency performance is analyzed. The probe pins are arranged with one signal pin in the center and four ground pins on the top, bottom, left and right sides. The insertion loss and return loss of the probe pin are calculated while increasing the separation between the probe pins to 0.35 mm, 0.40 mm, and 0.50 mm, respectively. It is confirmed that the probe pin has different features of the insertion loss due to its periodic resonance phenomenon. Effect of the characteristic impedance on pitch and assignment of the probe pin is also analyzed. It is verified that there are a number of ground pins whose characteristic impedance is close to 50 Ω.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.431-434
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• 2004

The design, simulation, modeling and measurement of a RF switch module for GSM applications were presented in this paper. switch module were simulated by ADS and constructed using a LTCC multi-layer switching circuit and integrated low pass filter, designed to operate in the GSM band. Insertion and return losses at 900 MHz of the low pass filters were designed to lower than 0.3 dB and higher than 12.7 dB respectively. The switch module constructed, contained 10 embedded passives and 3 surface mounted components integrated on $4.6{\times}4.8{\times}1.2$ m volume, 6-layer integrated circuit. The insertion loss of switch module at m MHz were around 11 dB.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2006.10a
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• pp.255-267
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• 2006

LTCC Technology is very suitable for 60 GHz application $\blacksquare$ LTCC substrate shows low loss at 60 GHz. - low insertion and return losses $\blacksquare$ Microstrip or CBCPW line is sultable for transmission lines at 60 GHz. - low loss (0.1dB/mm) $\blacksquare$ Single ribbbon bonding is adequate for interconnection - simple - low loss (0.1dB/bonding) $\blacksquare$ Characteristics of MMIC module - Gain difference (${\Delta}S21$) : 0.4 dB

• Journal of Electrical Engineering and Technology
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• v.10 no.2
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• pp.653-658
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• 2015

This paper deals with an efficient optimization design method of a compact ultra wideband (UWB) filter which can improve the characteristics of the filter. The Evolution Strategy (ES) algorithm is adopted for the optimization and modified to suppress the ripple by inserting an additional step to the ES scheme. The algorithm has the ability to control the ripple of an insertion loss in a passband as a modified approach. During the modified ES, a structure of initial shape is changed a lot, while includes the stepped impedance (SI) and the composite right/left handed transmission line (CRLH-TL). And an optimized filter satisfies the UWB specifications on the stopband and passband with an acceptable insertion loss. The filter achieves a much developed shape, the size of $15{\times}14mm$, the 3dB bandwidth from 2.7 to 10.8GHz, the flat insertion-loss less than 1dB, the wide stopband with 12~20GHz, and an acceptable return loss.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.1
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• pp.76-84
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• 2012

In this paper, two kinds of E-plane microstrip-to-waveguide transitions are optimally designed and fabricated for combining output power from multiple small-power amplifiers in a WR-28 waveguide because conventional K connectors cause unnecessary insertion loss and adaptor loss. The transition design is based on target specifications such as a center frequency of 35 GHz, bandwidth of ${\pm}500MHz$, 0.1 dB insertion loss and 20 dB return loss. Performance variation caused by mechanical tolerance and assembly deviation is fully evaluated by three dimensional electromagnetic simulation. The fabricated back-to-back transitions with 16 mm and 26.57 mm interstage microstrip lines show insertion loss per transition of ~0.1 dB at 35 GHz and average 0.2 dB over full Ka band. Also the back-to-back transition shows return loss greater than 15 dB, which implies that the transition itself has return loss better than 20 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.7
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• pp.1321-1325
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• 2001

In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO2/W stacked multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.621-625
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• 2001

In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO$_2$/W slatted multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.

• Journal of electromagnetic engineering and science
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• v.12 no.2
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• pp.171-175
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• 2012

In this work, a new microstrip-to-substrate integrated waveguide (SIW) transition using the parallel half-mode substrate integrated waveguide (HMSIW) is proposed. The proposed transition consists of three sections : a microstrip, parallel HMSIWs, and an SIW. By inserting the parallel HMSIWs section between the microstrip section and the SIW section, the proposed transition can improve the return loss characteristics of the near cut-off frequency because the HMSIWs section has a lower cut-off frequency than the SIW section (8.6 GHz). The lower cut-off frequency is achieved through gradual electromagnetic field mode changes for a low reflection. The measured return loss is less than 20 dB in the of 9.1~16.28 GHz freqeuncy range for the back-to-back transition. The measured insertion loss is within 1.6 dB for the back-to-back transition. The proposed transition is expected to play an important role in wideband SIW circuits fed by a microstrip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.50-51
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• 2009

This paper presents integrated passive device (IPD) based on Wilkinson power divider. The simulated 2-way power divider has the insertion loss of 3.123 dB, output isolation of -24.576 dB, input return loss of 26.415 dB, and output return loss of 33.478 dB. The power divider is based on IPD process design simulation at 2.5 GHz for WiMAX (Worldwide Interoperability for Microwave Access) applications. The chip size of power divider is $1\;\times\;1.2\;mm^2$, which is under fabrication.