• Title/Summary/Keyword: resonant capacitors

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Process Optimization of Composite-based Capacitor for LC Resonant Circuits

  • Mun, Sei-Young;Cha, Cheol-Ung;Choi, Jong-Chan;Lim, Seung-Ok;Hong, Sang-Jeen
    • Journal of the Speleological Society of Korea
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    • no.80
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    • pp.21-24
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    • 2007
  • The need for high-frequency decoupling capacitors to supply the transient current requirements to high-speed devices is ubiquitous in current microelectronics applications. Even though materials and their processes have already been developed in terms of their performances, low manufacturing cost cannot be overemphasized in current microelectronics industry. For this reason, we revisited low cost ceramic filled polymer integrated capacitor. Experiments were performed according to the design of experiment (DOE). The best recipe that has the optimized ratio of material composite was obtained using by response optimizer in Minitab. And also, high-frequency measurements were performed to get frequency dependent data using network analyzer.

The Converter of High Efficiency 48V 400A for Electronic Exchange (전자교환기용 고효율 48V 400A급 전력변환장치의 시작)

  • 박성우;서기영;전중함;김부국;이현우
    • Proceedings of the KIPE Conference
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    • 1998.11a
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    • pp.60-63
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    • 1998
  • The widely used power supply (Switched Mode Power Supply : SMPS) as a source in order to stabilize direct current for electronics or communication systems has merits, when it is compared to the existing source for stability, such as high efficiency, small size, light weight by means of switching process of the semiconductor device which controls the flow of power. However, due to existence of inductors and capacitors used for charging energy, the source part in electronic or communication systems hasn't reached the speed, that is supposed to get, for achieving smaller size and lighter weight. In order to get smallness in size, it is necessary to increase switching frequency. And that makes devices for measuring energy smaller. Nevertheless, the rise switching frequency brings increases in switching loss, inductor loss, and power loss. Also, the occurrence of surge and noise caused by high frequency switching is getting higher. The resonant converter has been considered as one of methods that give solutions for the problems of SMPS and that method have been paid attention as a source technology in electronics and communication.

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The Manufacturing and Analysis of Planar Dielectric materials for Integrated LC Resonant Module (집적 LC공진 모듈용 평판 유전체의 제조와 물성)

  • Park, Woo-Young;Kim, Jong-Ryung;An, Yong-Woon;Oh, Young-Woo;Kim, Hyun-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.497-501
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    • 2003
  • In order to manufacture ceramic capacitors for the industrial electronic parts application using Tape casting method, the dielectric properties as a functions of sintering temperatures and the fabrication conditions of green sheet were investigated to consider the possibility of applications. When the mixing ratio of powder and solvent in slurry was 65:35, the uniform and dense green sheets was obtained. The dielectric constant was increased as the sintering temperature Over 94% of relative density and high were obtained to the specimens sintered at $1000^{\circ}C$. We can find that the device sintered at higher temperature than $1000^{\circ}C$ showed the relative density over 94% and the dielectric constant over 2000.

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Isolated Power Supply for Multiple Gate Drivers using Wireless Power Transfer System with Single-Antenna Receiver

  • Lim, Chang-Jong;Park, Shihong
    • Journal of Power Electronics
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    • v.17 no.5
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    • pp.1382-1390
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    • 2017
  • This paper presents a power supply for gate drivers, which uses a magnetic resonance wireless power transfer system. Unlike other methods where multiple antennas are used to supply power for the gate drivers, the proposed method uses a single antenna in an insulated receiver to make multiple mutually isolated power supplies. The power transmitted via single antenna is distributed to multiple power supplies for gate drivers through resonant capacitors connected in parallel that also block DC bias. This approach has many advantages over other methods, where each gate driver needs to be supplied with power using multiple receiver antennas. The proposed method will therefore lead to a reduction in production costs and circuit area. Because the proposed circuit uses a high resonance frequency of 6.78 MHz, it is possible to implement a transmitter and a receiver using a small-sized spiral printed-circuit-board-type antenna. This paper used a single phase-leg circuit configuration to experimentally verify the performance characteristics of the proposed method.

Development of a Wideband EPR Spectrometer with Microstrip and Loop Antennas

  • Ponomaryov, A.N.;Choi, K.Y.;Suh, B.J.;Jang, Z.H.
    • Journal of Magnetics
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    • v.18 no.2
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    • pp.178-182
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    • 2013
  • We have developed a new non-conventional electron paramagnetic resonance (EPR) spectrometer, in which no resonant cavity was used. We previously demonstrated a wide frequency range operation of an EPR spectrometer using two loop antennas, one for a microwave transmission and the other for signal detection [1]. In contrast to Ref. [1], the utilization of a microstrip antenna as a transmitter enhanced a capability of wide-band operation. The replacement of conventional capacitors with varactor diodes makes resonance condition easily reproducible without any mechanical action during tuning and matching procedure since the capacitance of the diodes is controlled electronically. The operation of the new EPR spectrometer was tested by measuring a signal of 1,1-diphenil-2-picrylhydrazyl (DPPH) sample in the frequency range of 0.8-2.5 GHz.

Active-clamp current-fed push-pull converter (능동 클램프를 이용한 전류원 푸쉬풀 컨버터)

  • Kim, Sang-Sik;Kwon, Bong-Hwan
    • Proceedings of the KIEE Conference
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    • 2006.07b
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    • pp.1006-1007
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    • 2006
  • An active-clamp current-fed push-pull converter for the step-up application is proposed. The proposed converter is composed of active-clamp circuits and a voltage doubler rectifier. Thus, the voltage stress of the main switches is reduced and the output diodes are clamped to output voltage. Moreover, the output diodes can achieve zero current switching (ZCS) by the series resonance between resonant capacitors and leakage inductances. The prototype is designed for 350V/1.5kW with input voltage range $30{\sim}60V$. The theoretical analysis and experimental results are presented.

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A Study on the Zero-Voltage-Switching Three-Level DC/DC Converter using Primary Clamping Diodes (1차측 클램핑 다이오드를 이용한 ZVS Three-Level DC/DC 컨버터에 관한 연구)

  • Chon, Yong-Jin;Kim, Yong;Bae, Jin-Yong;Kim, Pil-Soo;Lee, Eun-Young;Chang, Boo-Hoan
    • Proceedings of the KIEE Conference
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    • 2004.10a
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    • pp.164-168
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    • 2004
  • A Zero-Voltage-Switching(ZVS) Three-Level Converter realizes ZVS for the switches with the use of the leakage inductance(or external resonant inductance) and the output capacitors of the switches, however; the rectifier diodes suffer from recovery which results in oscillation and voltage spike. In order to solve this problem, this paper proposes a novel ZVS Three-Level converter, which introduces two clamping diodes to the basic Three-Level converter to eliminate the oscillation and clamp the rectified voltage to the reflected input voltage.

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A Study on the Zero-Voltage-Switching Three-Level DC/DC Converter without Primary Freewheeling Diodes (1차측 환류 다이오드를 제거한 ZVS Three-Level DC/DC 컨버터에 관한 연구)

  • Chon, Yong-Jin;Kim, Yong;Bae, Jin-Yong;Lee, Eun-Young;Choi, Geun-Soo
    • Proceedings of the KIEE Conference
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    • 2005.04a
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    • pp.183-187
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    • 2005
  • A Zero-Voltage-Switching(ZVS) Three-Level Converter realizes ZVS for the switches with the use of the leakage inductance(or external resonant inductance) and the output capacitors of the switches, however; the rectifier diodes suffer from recovery which results in oscillation and voltage spike. In order to solve this problem, this paper proposes a novel ZVS Three-Level converter, which introduces two clamping diodes to the basic Three-Level converter to eliminate the oscillation and clamp the rectified voltage to the reflected input voltage, the proposed ZVS Three-Level converter can be simplified by removing the two freewheeling diodes.

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Characterization of High-K Embedded Capacitor in Low Temperature Co-fired Ceramic (고 유전율 저온 동시 소성 세라믹으로 제작된 초고주파용 캐패시터의 특성연구)

  • Ahn, Min-Su;Kang, Jung-Han;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.57-58
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    • 2005
  • The properties such as capacitance and resonant frequency are important in embedded capacitors. Accurate equivalent model is required to find these properties of embedded capacitor. In this paper, we investigate to analyze the properties of high-K embedded capacitor which was fabricated by Low Temperature Co-fired Ceramic (LTCC). Modeling based on partial element equivalent circuit (PEEC) method is performed using HSPICE circuit simulation. This modeling methodology can provide the good inspection of embedded capacitor to device engineer.

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A Triangular Microstrip Antenna with T-Shaped Slits for Tunable Dual-Band Applications (T자 모양 슬릿 구조를 이용한 이중 대역 공진 주파수 변환 삼각형 마이크로스트립 안테나)

  • Lee, Keon-Myung;Sung, Young-Je;Kim, Young-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.2
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    • pp.141-146
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    • 2009
  • A triangular microstrip antenna with T-shaped slits is proposed for tunable dual-band applications. The proposed antenna is designed using chip capacitors as a prototype. From this result the capacitor can be replaced to a varactor diode to control capacitance value. Since the input impedance of the antenna can be varied with the value of the chip capacitors on the T-shaped slits, the resonant frequency may be changed. The return losses are better than 10 dB at the lower band of $0.78{\sim}1.21$ GHz and 20 dB at the upper band of $1.97{\sim}2.17$ GHz, respectively. This antenna has the bandwidth of about 10 MHz and 50 MHz at each band. The peak gains of the antenna yield 0 dBi at the lower band and 3 dBi at the upper band, respectively. Details of the antenna design are described, and its performances are presented and analyzed.