• 전기의세계
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• 제21권2호
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• pp.25-33
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• 1972

The main focus of this paper is on the study of voltage-current characteristics in disk-type siliconcarbide resistors. For each of the 15 different sintering and other process conditions, 10 samples were prepared. Experiments performed with each sample consist of supplying sinusoidal AC current of a few miliamperes after conditioning-shots with 400ma. Experimental data were examined with regard to the relationship between the process conditions and the nonlinear resistivity. The examination suggests several possibilities of improving the nonlinlinear characteristics of siliconcarbide resistors while maintaining low resitance. One of those possible conditions is to sinter the powdered SiC and the binding materials approximately 2 hours in nitrogen. In addition to describing the nonlinear characteristics of siliconcarbide resistors, this paper also presents the distortion characteristics of current waves vs. the nonlinear exponent, n. Photographical results show that the more nonlinear characteristics samples have, the more distorted current waves are.

• 전기학회논문지
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• 제56권5호
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• pp.926-932
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• 2007

A recently developed methods for on-site calibration of the current transformer (CT) comparator system have been reviewed in the paper. The method utilizes several traveling standards, which consist of the CT, non-reactive standard resistors, wide ratio error CT, and shunt resistors. The traveling CT is used for absolute evaluation of a standard CT belonging to industry. The non-reactive standard resistors and a wide ratio error CT are used for the linearity check of errors in the current comparator. The shunt resistors are used for evaluation of CT burden of industry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.809-812
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• 2001

We were fabricated of NiCr thin film resistors on A1$_2$O$_3$and SiO$_2$/Si substrates by dc magnetron sputtering system. The AC characteristics of resistors were studied. The cut-off frequency were found >10 MHz for the resistors with 39 ohm value of Alumina substrates, but the cut-off frequency were found 400 kHz for the resistors with 168 ohm value of SiO$_2$/Si substrates. In high frequency applications, the substrate selection is the most important factor.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.641-649
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• 2016

In this paper, a novel time-domain measurement technique on a high parallelism probe card with protection resistors installed is proposed. The measured signal amplitude decreases when the measurement is performed by Needle Auto Calibration (NAC) probing on a high parallelism probe card with installed resistors. Therefore, the original signals must be carefully reconstructed, and the compensation coefficient, which is related to the number of channel branches and the value of protection resistors, must be introduced. The accuracy of the reconstructed signals is analyzed based on the varying number of channel branches and various protection resistances. The results demonstrate that the proposed technique is appropriate for evaluating the overall signal performance of probe cards with Automatic Test Equipment (ATE), which enhances the efficiency of probe card performance test dramatically.

• 한국통신학회논문지
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• 제10권4호
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• pp.155-158
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• 1985

본 논문에서 제안한 능동 여파기는 커패시터를 사용하지 않고 단지 4개의 저항과 2단의 연산 증폭기로 구성되고 다기능 특성을 갖고 있으며 저항의 비를 낮춘 능동-R 여파기이다. 제안된 능동-R 여파기는 여파기 파라미터인 극점 주파수 $W_r$와 극점$Q_r$의 감도가 매우 낮으며 고주파에서의 동작이 가능하고 사용한 저항의 수가 적어지고 저항의 비가 감소하므로 여파기의 집적화가 용이하다. 실험을 통하여 제안된 능동-R 여파기의 모든 특성이 이론과 거의 일치함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.52-57
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• 2006

Precision thin film resistors using evanohm R alloy were fabricated by do magnetron sputtering method. The physical and electrical properties of the resistors were studied after treatment of thermal annealing. The crystallization of the film was increased as the annealing temperature increase. Diffusion and oxidation of Cr and Al elements were occurred into the film surface. The minimum TCR values of 10.46 ppm/$^{\circ}C$ and 10.65 ppm/$^{\circ}C$ were measured at the annealing temperatures of $200^{\circ}C$ and $300^{\circ}C$, respectively. We are conducting additional studies to improve characteristics of our resistors for practical device application.

• 전자공학회논문지D
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• 제35D권7호
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• pp.56-62
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• 1998

Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.

• 대한전자공학회논문지
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• 제9권5호
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• pp.34-42
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• 1972

전류잡음은 탄소피막고정저항기의 품질을 나타내는 중요한 척도이다. 저항체피막상의 결함은 전류밀도의 불균형을 초래하고 결과적으로 전류잡음의 기대를 유발한다. 전류잡음의 크기는 저항재의 고유한 성질과 저항체의 처리, 조립 및 외장 등에 의한 여러 요인에 의존하고 있으나 각종 수명시험결과 저항기의 전기적특성과 전류잡음문에는 명백한 관계가 성립하고 있다. 대표군의 저항기에 대한 전류잡음지수의 정규분포를 표시하는 parameter를 해석하면 제품의 품질관리와 생산의 균일성을 판단하는 지표로서 매우 유용한 수단이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.