• Journal of the Korean Chemical Society
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• v.48 no.5
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• pp.504-509
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• 2004

The reaction of Cu metal with mixed alkali metal polyselenide flux ($KNaSe_x$) produced large plate-like crystals of $KCu_4Se_3$. The structure of $KCu_4Se_3$, determined with X-ray single crystal diffraction techniques, is tetragonal (P4/mmm, a=4.013(1))${\AA}$, c=9.712(1))${\AA}$, z=1, R=6.7%). The structure is composed $[Cu_4Se_3]_n^{n-}$double layers which are made of fused anti PbO-type Cu2Se2 layers. Temperature variable resistivity measurement on single crystal of $KCu_4Se_3$ shows metallic behavior ranging from $1.8{\times}10^{-4}{\Omega}{\cdot}cm$ (at 300 K) to $1.0{\times}10^{-6}{\Omega}{\cdot}cm$ (at 20 K).

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.109-114
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• 2003

The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt％ $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt％ $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

• The Journal of Engineering Geology
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• v.26 no.3
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• pp.339-352
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• 2016

The best way of investigating the physical and mechanical properties of subsurface materials is the combined interpretation of data from borehole geophysical surveys and geotechnical experiments with rock samples. In this study two surface seismic surveys with refraction and surface-wave method are alternatively conducted for downhole seismic surveys in test site for geological field trip in Jeungpyung, Chungbuk. P- and S-wave velocity structures are delineated by refraction and MASW (multichannel analysis of shear waves) methods, respectively. Possion's ratio section, reconstructed from P- and S-wave velocities, is correlated to the outcrop geological features consisting of reddish sedimentary rock, gray volcanic rock, and joints/fractures. In addition, rock samples representative for reddish sedimentary and gray volcanic features are geotechnically analyzed to provide physical, mechanical properties, and elastic modulus. Dynamic elastic moduli estimated from geophysical data is found to be higher than the one from geotechnical data. Reddish sedimentary rock characterized with low porosity and moisture content corresponds to the zone of low electrical resistivities and their small variations in the resistivity sections between the rainy and dry days. This trend suggests that the weathered gray volcanic rock and the nearby fractures with higher low porosity and moisture content are interpreted to be good carrier especially in rainy season.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.51-57
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• 2010

Thermoelectric properties of the p-type $(Bi,Sb)_2Te_3$, hot-pressed with the $(Bi,Sb)_2Te_3$ powders fabricated by melting/grinding method, were characterized with variation of the hot-pressing conditions. Thermoelectric characteristics of the hot-pressed $(Bi,Sb)_2Te_3$ were also analyzed with addition of $ZrO_2$ as nano inclusions. With increasing the hotpressing temperature from $350^{\circ}C$ to $550^{\circ}C$, Seebeck coefficient and electrical resistivity decreased from 275 ${\mu}V$/K to 230 ${\mu}V$/K and 6.68 $m{\Omega}$-cm to 1.86 $m{\Omega}$-cm, respectively. The power factor decreased with addition of $ZrO_2$ nano powders more than 1 vol%, implying that the optimum amount of $ZrO_2$ nano inclusions to get a maximum power factor would be less than 1 vol%.

• Journal of Korean Tunnelling and Underground Space Association
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• v.18 no.1
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• pp.1-12
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• 2016

When utilizing a Tunnel Boring Machine (TBM) for tunnelling work, unexpected ground conditions can be encountered that are not predicted in the design stage. These include fractured zones or mixed ground conditions that are likely to reduce the stability of TBM excavation, and result in considerable economic losses such as construction delays or increases in costs. Minimizing these potential risks during tunnel construction is therefore a crucial issue in any mechanized tunneling project. This paper proposed the potential risk events that may occur due to risky ground conditions. A resistivity survey is utilized to predict the risky ground conditions ahead of the tunnel face during construction. The potential risk events are then evaluated based on their occurrence probability and impact. A TBM risk management system that can suggest proper solution methods (measures) for potential risk events is also developed. Multi-Criterion Decision Making (MCDM) is utilized to determine the optimal solution method (optimal measure) to handle risk events. Lastly, an actual construction site, at which there was a risk event during Earth Pressure-Balance (EPB) Shield TBM construction, is analyzed to verify the efficacy of the proposed system.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.73-79
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• 2008

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin films on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for high transmittance and low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 200 W, target to substrate distance of 30 mm and working pressure of 5 mTorr, highly conductive($7.4{\times}10^{-3}{\Omega}cm$) and transparent(over 85%) ZnO films were prepared. Highly oriented ZnO film in the [002] direction were obtained with specifically designed ZnO targets. Systematic study on dependence of deposition parameters on electrical and optical properties of the as-grown ZnO films were mainly investigated in this work. And for application tests using these films as transparent conductive oxide anodes, wet chemical etching behaviors of ZnO films were also investigated using various chemicals. Wet-chemical etching behavior of ZnO films were investigated using various acid solutions. The concentrations of these different acid solutions were controlled to study the etching shapes and etching rate. ZnO films were anisotropically etched at various concentrations and wet etching led to crater-like surface structure. Also we firstly found that the etching rate and etching shapes of ZnO films strongly depended on the etchant concentrations (i.e. pH) and the etching rate is exponentially decreased with increasing pH values regardless of the acid etchants.

• Journal of the Korean Geosynthetics Society
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• v.13 no.3
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• pp.1-10
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• 2014

Several types of methods such as resistivity survey, ground penetration radar, etc are used for detection of levee leakage and according to the river design guidelines detection of levee leakage is performed by measuring the hydraulic conductivity of levee soil. But, the former can not verify the leakage point and degree of saturation, the latter is an after treatment method. Movable sensor, which is a high-tech TDR system developed since 2000, can obtain directly the dielectric constant profile covering the whole depth of levee. In this study, laboratory and field model experiments were carried out using movable TDR sensor in order to evaluate the applicability as detection system of levee leakage, As the result, movable TDR system has proven to be 3 times more sensitive to water contents than dry unit weight, and the results conclude that the dielectric constant, water contents and density of the ground proved to have a correlation among them, and the dielectric constant is expected to be a basic data on detection of levee leakage.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

• The Journal of Engineering Geology
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• v.25 no.3
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• pp.349-356
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• 2015

Although geophysical methods are useful and generally provide valuable information about the subsurface, it is important to recognize their limitations. A common limitation is the lack of sufficient contrast in physical properties between different layers. Thus, multiple methods are commonly used to best constrain the physical properties of different layers and interpret each section individually. Ground penetrating radar (GPR) and shallow seismic reflection (SSR) methods, used for shallow and very shallow subsurface imaging, respond to dielectric and velocity contrasts between layers, respectively. In this study, we merged GPR and SSR data from a test site within the Cheongui granitic mass, where the water table is ~3 m deep all year. We interpreted the data in combination with field observations and existing data from drill cores and well logs. GPR and SSR reflections from the tops of the sand layer, water table, and weathered and soft rocks are successfully mapped in a single section, and they correlate well with electrical resistivity data and SPS (suspension PS) well-logging profiles. In addition, subsurface interfaces in the integrated section correlate well with S-wave velocity structures from multi-channel analysis shear wave (MASW) data, a method that was recently developed to enhance lateral resolution on the basis of CMP (common midpoint) cross-correlation (CMPCC) analysis.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.