• 전기전자학회논문지
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• 제8권1호
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• pp.73-78
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• 2004

본 논문은 5.8 GHz 무선 랜용 서브 하모닉 저항성 혼합기를 설계하였다. 서브 하모닉 저항성 혼합기는 서브 하모닉 혼합기와 저항성 혼합기의 장점이 합쳐진 구조이다. 서브 하모닉 저항성 혼합기는 LO의 고조파 성분과 RF를 혼합하여 IF주파수를 얻는다. 그래서 기존의 혼합기보다 낮은 LO 주파수를 사용이 가능하다. 그리고 서브 하모닉 저항성 혼합기는 GaAs FET의 unbiased 채널 저항을 사용하여 주파수 혼합하므로 낮은 IMD를 특성을 갖는다. 제작된 서브 하모닉 저항성 혼합기의 변환손실은 LO 신호전력이 13 dBm일 때, 10.67 dB이다. 그리고 혼합기의 IIP3는 21.5 dBm이다.

• 한국전자파학회논문지
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• 제17권8호
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• pp.719-724
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• 2006

본 논문에서는 Half-LO 주파수를 이용하는 새로운 방식의 double-conversion down mixer를 2.3 GHz 대역에서 설계하였다. 제안된 mixer에서는 Half-LO 주파수를 2개의 HEMT에 인가하여 두 HEMT에서의 변환 방식을 gate type과 resistive type으로 다르게 함으로서 IF 주파수를 얻게 된다. 기존의 sub-harmonic mixers와 같이 Half-LO 주파수를 사용하지만 제안된 mixer는 Half-LO의 second harmonic 성분을 이용하지 않고 Half-LO의 기본 주파수를 이용하여 주파수 변환을 하고 두 번째 HEMT에서 Resistive mixer type으로 IF 신호를 얻기 때문에 기존의 능동 mixer보다 향상된 선형성을 얻을 수 있다. 2.3 GHz 대역에서 설계 제작된 mixer는 Half-LO 전력 10 dBm을 이용하여 5dB의 변환 손실과 16.25dBm의 IIP3 특성을 얻을 수 있었다.

• Journal of Advanced Marine Engineering and Technology
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• 제31권8호
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• pp.970-974
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• 2007

A mixer is a key component in the wireless communication systems. In this paper, we design a mixer which is used in a frequency modulated continuous wave(FMCW) radar system. The frequency sweep range of the radar is from 10 GHz to 11 GHz. The transmitted and received signals of the FMCW radar are applied to LO and RF ports of the mixer, respectively, but the frequency difference between the two signals, which is called "a beat frequency" is under a few KHz and depending on the distance to target. Thus the isolation between the LO and RF ports is very important factor to design this mixer. In this paper we propose a single balanced resistive mixer using GaAs MESFET for this application. We first design a single-ended type resistive mixer using a simulation tool, then design a balanced type to increase the LO-to-RF isolation of the mixer. We fabricated the mixer on the substrate of dielectric constant 10 and thickness 0.635 mm. The measured results show that the isolation and conversion loss of the mixer over the frequency band is 20dB and 10.5dB, respectively. The LO input power for operating the proposed mixer is +3dBm, which is lower than a general conventional mixer's LO power. The 1 dB compression point is 6dBm.

• Journal of electromagnetic engineering and science
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• 제4권4호
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• pp.143-149
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• 2004

This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

• 대한전자공학회논문지TC
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• 제42권5호
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• pp.61-68
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• 2005

본 논문에서는 낮은 변환손실 특성의 94 GHz MIMIC(Millimeter-wave Monolithic Integrated Circuit) resistive 믹서를 설계 및 제작하였다. MIMIC resistive 믹서는 $0.1{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT (High Electron Mobility Transistor)를 이용하여 설계 및 제작되었다. 제작된 MHEMT는 드레인 전류 밀도 665 mA/mm, 최대 전달컨덕턴스(Gm)는 691 mS/mm를 얻었으며, RF 특성으로 fT는 189 GHz, fmax는 334 GHz의 양호한 성능을 나타내었다. 94 GHz MIMIC 믹서의 개발을 위해 MHEMT의 비선형 모델과 CPW 라이브러리를 구축하였으며, 이를 이용하여 MIMIC 믹서를 설계하였다. 설계된 믹서는 본 연구에서 개발된 MHEMT MIMIC 공정을 이용해 제작되었다. 94 GHz MIMIC resistive 믹서의 측정결과 변환손실 특성은 94 GHz에서 8.2 dB의 양호한 특성을 나타내었으며, 입력 P1 dB는 9 dBm, 출력 P1 dB는 0 dBm의 결과를 얻었다. Resistive 믹서의 LO-IF 격리도는 94.03 GHz에서 15.6 dB의 측정 결과를 얻었다. 본 논문에서 설계 및 제작된 94 GHz MIMIC resistive 믹서는 기존의 W-band 대역 resistive 믹서와 비교하여 낮은 변환손실 특성을 나타내었다.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.16-20
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• 2002

This paper describes the resistive FET mixer with low IF for the 4-Ch DBF(Digital Beam Forming) receiver with LNA(Low Noise Amplifier). This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 2.09 ㎓, 2.08 ㎓ and 10㎒, respectively. The RF input power, LO input power and Vgs are used -10㏈m, 6㏈m and -0.4 V, respectively. In the 4-Ch resistive FET mixer with LNA, the measured IF and harmonic components of 10㎒, 20㎒, 2.09㎓ and 4.17㎓ are about -12.5 ㏈m, -57㏈m, -40㏈m and -54㏈m, respectively. The IF output power observed at each channel of 10㎒ is about -12.5㏈m and it is higher 27.5 ㏈m than the maximum harmonic component of 2.09㎓. Each IF output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.921-924
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• 2005

We report low conversion loss and high LO to RF isolation 94 GHz MMIC resistive mixers based on 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The fabricated resistive mixers applied a one-stage amplifier on RF port of the mixer. By using the one-stage amplifier, we obtained the decrement of conversion loss and the increment of LO to RF isolation. So, we can obtain higher performances than conventional resistive mixers. The modified mixer shows excellent conversion loss of 6.7 dB at a LO power of 10 dBm. We also observed an extremely high isolation characteristic from the MMICs exhibiting the LO-RF isolation of 21 ${\pm}$ 0.5dB in a frequency range of 93.7${\sim}$ 94.3 GHz. The low conversion loss and high LO-RF isolation characteristics of the MMIC modified resistive mixers are mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 654 mS/mm, a current gain cut-off frequency of 173 GHz and a maximum oscillation frequency of 271 GHz.

• 대한전자공학회논문지TC
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• 제43권6호
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• pp.46-52
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• 2006

본 논문에서는 70-nm metamorphic high electron mobility transistor (MHEMT)와 W-band 마이크로 머시닝 링 커플러를 이용하여 낮은 변환손실 및 높은 격리특성의 94 GHz MMIC 믹서를 설계 및 제작하였다. 놀은 LO-RF 격리도 특성을 얻기 위하여 마이크로 머시닝 링 커플러를 사용한 새로운 3차원 구조의 resistive 믹서 구조를 제안하였다. 제작된 93 GHz MMIC 믹서는 94 GHz에서 8.9 dB의 낮은 변환 손실과 29.3 dB의 높은 LO-RF 격리돈 특성을 나타내었다. 본 논문에서 제안된 믹서는 기존의 보고된 W-band 대역 믹서와 비교하여 양호한 변환 손실 뿐 만 아니라 우수한 LO-RF 격리도 특성을 나타내었다.

• ETRI Journal
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• 제33권5호
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• Journal of electromagnetic engineering and science
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• 제2권2호
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• pp.117-123
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• 2002

This paper describes the design for the resistive FET mixer with low If for the 4-Ch DBF(Digital Beam Forming) receiver This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(If) considered in this research are 2.09 GHz, 2.08 CHz and 10 MHz, respectively. This mixer is composed of band pass filter, a low pass filter and a DC bias circuit. Super low noise HJ FET of NE3210S01 is considered in design. The RE input power, LO input power and Vcs are used -10 dBm, 6 dBm and -0.4 V, respectively. In the 4-Ch resistive FET mixer, the measured If and harmonic components of 10 MHe, 20 MHz and 2.087 CHz are about -19.2 dBm, -66 dBm and -48 dBm, respectively The If output power observed at each channel of 10 MHz is about -19.2 dBm and it is higher 28.8 dBm than the maximum harmonic component of 2.087 CHz. Each If output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.