• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.584-592
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• 2003

6H-SiC MOSFETs and digital ICs have been fabricated and characterized. PMOS devices are fabricated on an n-type epilayer while the NMOS devices are fabricated on implanted p-wells. NMOS and PMOS devices use a thermally grown gate oxide. SiC MOSFETs are fabricated using different impurity activation methods such as high temperature and newly proposed laser annealing methods. Several digital circuits, such as resistive road NMOS inverters, CMOS inverters, resistive road NMOS NANDs and NORs are fabricated and characterized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.140-143
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• 2000

The primary function of ZnO lightning arrester is to protect transmission and distribution equipment from overvoltages and to absorb electrical energy resulting from lightning or switching surges and form temporary overvoltage. However, ZnO lightning arrester are known to exhibit an increases in resistive current with time, the rate of increase being exacerbated with increasing applied voltage and ambient temperature. So, it is important to the leakage current measurement of ZnO lightning arrester. In addition, since the resistive leakage current caused by deterioration of ZnO lightning arrester mainly caused an increase of the third harmonic component, thereby it is possible the arrester degradation diagnosis by measuring the third harmonic component in the total leakage current. The leakage current and third harmonic component are measured and used to investigate the degradation diagnosis of ZnO element of arrester. Also the SEM photography is used to investigate the change of crystal structure of ZnO element with degradation.

• Journal of Power Electronics
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• v.19 no.6
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• pp.1575-1581
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• 2019

Due to the mismatched line impedance among distributed generation units (DGs) and uncontrolled harmonic current, the droop controller has a number of problems such as inaccurate reactive power sharing and voltage distortion at the point of common coupling (PCC). To solve these problems, this paper proposes a resistive-capacitive virtual impedance control method. The proposed control method modifies the DG output impedance at the fundamental and harmonic frequencies to compensate the mismatched line impedance among DGs and to regulate the harmonic current. Finally, reactive power sharing is accurately achieved, and the PCC voltage distortion is compensated. In addition, adaptively controlling the virtual impedance guarantees compensation performance in spite of load changes. The effectiveness of the proposed control method was verified by experimental results.

• Proceedings of the KSR Conference
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• 2009.05b
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• pp.387-392
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• 2009

Measurement of dynamic characteristics are widely used to detect defects in mechanical or civil structures. The most common approach is to measure changes in frequency spectrum or mode shapes using accelerometers. An alternative to using mode shapes is using stain modes. Strain is more sensitive to local defects than displacement, and hence stain modes measurement is an efficient in structural health monitoring. This paper deals with dynamic monitoring of a beam structure using strain sensors. Resistive strain gages and FBG strain gages are used and their characteristics are compared. It has been known that resistive strain gages are week to EMI environment and suffers from noise at high frequency range. It has been shown that the FBG sensor is a good alternative that overcomes such difficulties.

• Proceedings of the KSR Conference
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• 2008.11b
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• pp.225-229
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• 2008

This paper describes a series arc detection algorithm in a low-voltage wiring system. We designed and fabricated an arc detection circuit which consists of a high-pass filter with the low cut-off frequency of 3 kHz to attenuate power frequency. The series arcing phenomena was simulated by an arc generator specified in UL1699. In the experiment, various loads such as resistive loads, resistive loads controlled by a dimmer, and vacuum cleaners were used. Whether the signal is arc or noise is discriminated by pulse counts and periodicity of the detected signal.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.151-154
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• 2005

In this paper, we present the enhanced performance of resistive RAM devices with multi-step deposited and annealed oxides. By using multi-step deposition and low temperature multi-step annealins, forming-free Re-RAM is achieved with lower operation voltages and larger resistive ratio than those of conventional Re-RAM with typical single deposited oxide.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.113-117
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• 2021

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

• Journal of electromagnetic engineering and science
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• v.19 no.2
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• pp.71-81
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• 2019

This paper presents a design methodology for wideband single-layered microwave absorbers with arbitrary absorption at the design center frequency using reactive Salisbury screens. The bandwidth of the absorber increases when the flatness of the reflection response at the design center frequency is maximized. Based on this observation, closed-form design formulas for wideband absorbers are derived. As they are scalable to any design frequency, wideband reactive screens can be systematically realized using two-dimensional periodic crossed-dipole structures patterned on a resistive sheet. Based on this method, a single-layered absorber with a 90% bandwidth improved to 124% of the design center frequency is presented. For the purpose of physical demonstration, an absorber with a design center frequency of 10 GHz is designed and fabricated using a silver nanowire resistive film with a surface resistance of 30 Ω/square. The measured absorption shows a good agreement with both the calculation and the electromagnetic simulation.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.20-21
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• 2007

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.40-41
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• 2005