Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Resistance Switching Enhancement in Multi-step Deposition by Multi-deposition and Multi-anneal

  • Kim KyongRae (Division of Information Display Engineering, Hanyang University) ;
  • Ko Han-kyoung (Division of Advanced Materials Science & Engineering, Hanyang University) ;
  • Lee Taeho (Division of Advanced Materials Science & Engineering, Hanyang University) ;
  • Park In-Sung (Information Display Research Institute, Hanyang University) ;
  • Ahn Jinho (Division of Advanced Materials Science & Engineering, Hanyang University, Information Display Research Institute, Hanyang University)
  • Published : 2005.09.01
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Abstract

In this paper, we present the enhanced performance of resistive RAM devices with multi-step deposited and annealed oxides. By using multi-step deposition and low temperature multi-step annealins, forming-free Re-RAM is achieved with lower operation voltages and larger resistive ratio than those of conventional Re-RAM with typical single deposited oxide.

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