• 제목/요약/키워드: resistive

검색결과 1,189건 처리시간 0.03초

Resistive Memory Switching in Ge5Se5 Thin Films

  • Kim, Jang-Han;Hwang, Yeong-Hyeon;Chung, Hong-Bay
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.326-326
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    • 2014
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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Microwave Annealing in Ag/HfO2/Pt Structured ReRAM Device

  • Kim, Jang-Han;Kim, Hong-Ki;Jang, Ki-Hyun;Bae, Tae-Eon;Cho, Won-Ju;Chung, Hong-Bay
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.373-373
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    • 2014
  • Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

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점진적 저항운동과 수중운동프로그램이 여성노인의 하지근력강화와 균형능력에 미치는 영향 (The Effects of Progressive Resistive Exercise and Aqua Exercise Program on Lower Extremity Muscle Strength and Balance in Elderly Women.)

  • 이인학;문성기;이병권;이정우;김인섭
    • 대한임상전기생리학회지
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    • 제2권1호
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    • pp.19-37
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    • 2004
  • The purpose of this study was to examine the effects of Progressive Resistive Exercise Program and Aqua Exercise Program on Lower extremity Muscle strength, Balance in Elderly old. The average age of elder female was 71.65 years. Subjects of the study were twenty older women living in daejon. The date were analyzed with frequency, independent t-test, paired t-test using SPSS PC(ver.10.0). The subjects were practiced with focusing on the Progressive Resistive Exercise Program and Aqua Exercise Program for 8 weeks, from 8, April 2002 to 1, June 2002. The results of this study were as follows: 1. After the Progressive Resistive Exercise Program, Balance ability by OLSTR, OLSTL was improved(p<0.05) on the soft surface with close eyes. 2. After the Aqua Exercise Program, the strength of the right knee flexors and extensors was improved(p<0.05). 3. After the Aqua Exercise Program, the strength of the left knee flexors was improved(p<0.01). 4. After the Aqua Exercise Program, Balance ability by OLSTR was improved(p<0.001) on the soft surface with open eyes, close eyes and by OLSTL was improved(p<0.05) on the hard surface with open eyes.

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진동자극을 이용한 저항운동이 앞십자인대 재건술 후 무릎관절 근력과 균형에 미치는 영향 (Effects of Resistance Exercise Using Vibration Stimulation on Knee Muscle Strength and Balance after Anterior Cruciate Ligament Reconstruction)

  • 배창환;이중호;김제춘;김명권;김성환
    • 대한정형도수물리치료학회지
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    • 제23권2호
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    • pp.17-25
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    • 2017
  • Background: The purpose of this study was to investigate how the resistive exercises with vibration stimuli could affect the strength of knee muscles and balance in patients with a history of reconstructive surgery. Methods: Thirty four subjects with anterior cruciate ligament reconstruction were randomly divided into 3 groups; Resistive exercises with vibration stimuli group (n=11), Resistive exercises (n=11) and control group (n=12). The paired t-test was used to show the variation before and after exercise in all three groups. One way ANOVA was used to separate the total variation between groups. Results: The results showed that there was significant improve in the strength of knee muscles in all three groups and resistive exercise with vibration stimuli he group showed a better result in all area than the other two groups. Comparisons of sway distances with open and closed eyes showed a statistically significant decrease before and after treatment in all three groups, there was no statistically significant difference between groups. There was a significant difference only in the sway distance with the eyes closed. Conclusions: Applying the resistive exercise with vibration stimuli as a therapeutic exercise program resulted in a positive effect to the functional activity not only in rapidly recovering the strength the weaken muscles and lost of balance ability, but also expecting an earlier return to daily life by advancing the date of the process for the functional activity.

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Improvement of Reliability by Using Fluorine Doped Tin Oxide Electrode for Ta2O5 Based Transparent Resistive Switching Memory Devices

  • Lee, Do Yeon;Baek, Soo Jung;Ryu, Sung Yeon;Choi, Byung Joon
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제16권1호
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    • pp.1-6
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    • 2016
  • Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

Transverse dynamics of slender piezoelectric bimorphs with resistive-inductive electrodes

  • Schoeftner, Juergen;Buchberger, Gerda;Benjeddou, Ayech
    • Smart Structures and Systems
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    • 제18권2호
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    • pp.355-374
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    • 2016
  • This paper presents and compares a one-dimensional (1D) bending theory for piezoelectric thin beam-type structures with resistive-inductive electrodes to ANSYS$^{(R)}$ three-dimensional (3D) finite element (FE) analysis. In particular, the lateral deflections and vibrations of slender piezoelectric beams are considered. The peculiarity of the piezoelectric beam model is the modeling of electrodes in such a manner that is does not fulfill the equipotential area condition. The case of ideal, perfectly conductive electrodes is a special case of our 1D model. Two-coupled partial differential equations are obtained for the lateral deflection and for the voltage distribution along the electrodes: the first one is an extended Bernoulli-Euler beam equation (second-order in time, forth order in space) and the second one the so-called Telegrapher's equation (second-order in time and space). Analytical results of our theory are validated by 3D electromechanically coupled FE simulations with ANSYS$^{(R)}$. A clamped-hinged beam is considered with various types of electrodes for the piezoelectric layers, which can be either resistive and/or inductive. A natural frequency analysis as well as quasi-static and dynamic simulations are performed. A good agreement between the extended beam theory and the FE results is found. Finally, the practical relevance of this type of electrodes is shown. It is found that the damping capability of properly tuned resistive or resistive-inductive electrodes exceeds the damping performance of beams, where the electrodes are simply linked to an optimized impedance.

접지된 유전체 위의 저항율이 일정한 저항띠 격자구조에 대한 전자파 산란 해석 - H-분극인 경우 - (Analysis of the Electromagnetic Scattering of Resistive Strip Grating with Uniform Resistivity on a Grounded Dielectric Layer - H-Polarization Case -)

  • 최영선;양승인
    • 한국통신학회논문지
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    • 제31권3A호
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    • pp.321-327
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    • 2006
  • 본 논문은 접지된 유전체 평면 위에 균일한 저항율을 갖는 저항띠 격자구조로 임의의 방향으로 입사되는 H-분극 전자파산란 문제를 모멘트 법으로 해석하였다. 기존의 논문에서는 전류밀도의 분포에 따라 기저함수를 다양한 직교다항식으로 변경하여 I-분극의 경우만 수치해석 하였다. 반면에, 본 연구에서는 각 저항띠의 양끝에서 유도 전류밀도가 0 이 되도록 cosine 함수와 sine 함수로 구성된 다항식의 급수로 나타내었다. 산란 전자계는 주기적인 구조에 대응시킬 수 있는 Floquet 모드함수의 급수로 전재하였으며, 미지의 계수를 구하기 위하여 경계조건을 적용하였다. 또한, Fourier-Galerkin 모멘트 법을 적용함으로서 접지된 유전체 위에 여러 가지 저항율을 갖는 저항띠에 대하여 기하광학적인 정규화 된 반사전력에 관한 스트립 폭 및 주기, 입사각의 영향을 수치해석 하였다.

접지된 2중 유전체 사이의 저항 띠 격자 구조에 의한 E-분극 전자파 산란 해석 (Analysis of E-polarized Plane Wave Scattering by a Tapered Resistive Strip Grating in a Grounded Double Dielectric Layer)

  • 최영선;양승인
    • 한국전자파학회논문지
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    • 제18권6호
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    • pp.656-663
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    • 2007
  • 본 논문은 접지된 2중의 유전체 평면 사이에 변화하는 저항율을 갖는 저항 띠 격자 구조로 임의의 각도로 입사되는 E-분극 전자파 산란 문제를 모멘트 법으로 해석하였다. E-분극 산란에서는 저항 띠의 모서리 양끝에서 유도되는 전류 밀도가 매우 높을 것으로 예측되므로, 이 특성과 일치하는 기저 함수를 직교 다항식 일종인 2종 Chebyshev 다항식의 급수로 전개하여 수치 해석하였다. 산란 전자계는 주기적인 구조에 대응시킬 수 있는 Floquet 모드 함수의 급수로 전개하였고, 미지의 계수를 구하기 위하여 경계 조건을 적용하였다 또한, Fourier-Galerkin 모멘트 법을 적용함으로써 접지된 2중의 유전체 사이에 다양한 저항율을 갖는 저항 띠에 대해 기하광학적인 정규화 된 반사 전력에 관한 스트립 폭과 주기, 입사각의 영향 등을 수치 해석하였다.

인공위성 시스템을 위한 태양전지 전력조절기의 저항제어 (Resistive Current Mode Control for the Solar Array Regulator of SPACE Power System)

  • 배현수;양정환;이재호;조보형
    • 전력전자학회논문지
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    • 제11권6호
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    • pp.535-542
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    • 2006
  • 저궤도 인공위성 전력계 시스템의 설계 및 해석을 위한 태양전지 전력조절기의 대신호 안정도해석을 수행한다. 태양전지 전력조절기에서 제어가능한 모든 방법에 따른 태양전지에서 바라본 태양전지 전력조절기의 부하특성을 분류하고, 상태공간해석을 이용하여 태양전지 시스템의 대신호적 안정도를 해석한다. 또한, 본 논문에서는 태양전지 전력조절기의 부하특성을 정전력부하에서 정저항부하로 변환하여 대신호적인 안정도를 확보하는 비선형변환을 제안한다. 제안된 변환기법을 통해 최대전력점 추적제어나 배터리 충전제어 및 전류분배제어가 가능한 병렬 모듈 태양전지 레귤레이터에 적합한 단일 전류 제어기를 구성한다. 제안된 대신호 해석과 저항제어를 검증하기위해, 200W급 태양전지와 100W급 태양전지 전력조절기 두 모듈을 병렬로 구성하여 실험하였다.

FRP 시트로 보강된 철근콘크리트 벽체의 방호성능 평가 (Evaluation on Blast Resistance Performance of Reinforced Concrete Wall Strengthened by FRP Sheet)

  • 이건호;김재민;김재현;이상훈;김강수
    • 한국구조물진단유지관리공학회 논문집
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    • 제26권5호
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    • pp.151-160
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    • 2022
  • 최근 폭발사고의 빈도수가 증가함에 따라 주요 구조부재의 손상을 저감시킬 수 있는 방호 구조물 설계에 대한 관심이 높아지고 있다. 그러나, 방호 구조물의 방호성능에 대한 국내 연구는 아직 미진한 실정이며, 아직 설계 가이드라인도 충분히 갖추어지지 못한 실정이다. 따라서, 본 연구에서는 FRP 시트 보강유무를 변수로 하여 RC 방호벽에 대한 해석적 연구를 수행하였다. 해석은 LS-DYNA 프로그램을 활용하여 수행되었으며, 해석을 통해 RC 방호벽과 FRP 시트로 보강된 RC 방호벽의 변위-시간이력곡선, 압력-충격량 도표, 취약도 곡선을 도출하였다. FRP 시트 보강방법은 RC 방호벽의 방호성능을 향상시키는데 매우 효율적인 것으로 나타났다. 또한, 폭발하중의 크기가 클수록 RC 방호벽에 대한 FRP 시트의 보강효과는 높아지는 것으로 나타났다.