• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.575-578
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• 2004

In this study, we designed HAN(hybrid-aligned nematic) cell using novel tilt angle control method. It was possible to make novel HAN cell using a single polyimide by hot plate baking method. This new HAN cells showed slower response time as compared with conventional HAN cell. However, the alignment state and V-T curve of HAN cell using novel method were acceptable. Also, it showed better C-V characteristic than that of conventional HAN cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.210-213
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• 2004

We synthesized photoalignment material of high thermal resistance with hydroxyl aromatic polyimide, and studied the liquid crystal (LC) aligning capabilities on the photopolymer layers. Also, electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure were investigated. A good LC alignment with UV exposure on the photopolymer surface can be obtained. However, the low pretilt angles were obtained below $1^{\circ}$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN cell with UV exposure was observed. The response time of photoaligned TN cell was measured about 24 ms. Finally, The photoaligned TN cell has few hysteresis, and shows the residual DC voltage that is less.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.44-44
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• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.124-127
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• 2002

LC aligning capabilities and the variation of pretilt angles with ion beam irradiation on the a-C:H thin films, and electro-optical (EO) performances of the ion beam aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the a-C:H thin film were studied. A high pretilt angle of $3.5{^{\circ}}$ via ion beam irradiation on the a-C:H thin film was measured. Also, the LC pretilt angle decreased due to the increase in surface roughness at over 2 min of IB exposure time. It is considered that this roughness increase due to increasing IB exposure time that generated destroy of oriented rings of atoms related to LC alignment. An excellent voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the a-C:H thin film for 1 min. Also, a faster response time for the ion beam aligned TN-LCD with oblique ion beam exposure on the a-C:H thin film for 1 min can be achieved. Finally, the residual DC property of the ion beam aligned TN-LCD with ion beam exposure of 1 min on the a-C:H thin film is almost same as that of the rubbing aligned TN-LCD on a PI surface.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.81-86
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• 2001

We have investigated surface photovoltage characteristics of InGaAs grown by metalorganic chemical vapor deposition (MOCVD) method on semi-insulating GaAs. The splitted SPV signals from the substrate and epilayer were observed. The band gap energy of InGaAs was about 1.376 eV, The In composition(x) was determined by Pan's composition formula. The photovoltage gradually decreases with increasing frequency. This is because the transfer of charge from the surface states reduces. From the temperature dependent SPV measurement, we obtained Varshni and temperature coefficients. In spectrum of etched sample at 300 K, the 'A' peak below $E_o(GaAs)$ is related with residual impurity during sample growth.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.375-381
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• 2002

N-type ${\beta}-FeSi_2$ with a nominal composition of $Fe_{0.98}Co_{0.02}Si_2$ powders has been produced by mechanical alloying process and consolidated by vacuum hot pressing. As-milled powders were of metastable state and fully transformed to ${\beta}-FeSi_2$ phase by subsequent isothermal annealing. However, as-consolidated $Fe_{0.98}Co_{0.02}Si_2$ consisted of untransformed mixture of ${\alpha}-Fe_2Si_ 5$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting ${\beta}-FeSi_2$ phase. The transformation behavior of ${\beta}-FeSi_2$ was investigated by utilizing DTA, a modified TGA under magnetic field, SEM, and XRD analyses. Isothermal annealing at $830^{\circ}C$ in vacuum led to the thermoelectric semiconducting ${\beta}-FeSi_2$ phase transformation, but some residual metallic $\alpha$ and $\varepsilon$ phases were unavoidable even after prolonged annealing. Thermoelectric properties were remarkably improved by isothermal annealing due to the transformation from metallic $\alpha$ and $\varepsilon$ phases to semiconducting phases.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.5
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• pp.566-573
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• 2022

In this study, the mechanical properties of the polymer electrolyte membrane according to the temperature were studied. The test specimens of polymer electrolyte membrane were heat treated at 40℃, 60℃, 80℃, 100℃, and 120℃, and then the tensile tests were performed. As results of this study, the residual stress of the polymer electrolyte membrane was removes by the heat treatment and the elastic modulus decreased due to the decrease in internal energy. In addition, in the plastic region, the mechanical properties and crystallization rate of the polymer electrolyte membrane increased in proportion according to increase of the heat treatment temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.57-60
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• 2003

Electro-Optical (EO) performances for the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new of diamond like carbon (DLC) thin film surface were investigated. Voltage-transmittance (V-T) curve and response time without backflow bounce in the ion beam aligned TN-LCD with ion beam exposure for 0.5 and 1min on the DLC thin film was observed. Also. the fast response time of ion beam aligned TN-LCD with ion beam exposure for 1min on the DLC thin film surface can be achieved. The residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface was almost the same as that of the rubbing aligned TN-LCD on the polyimide(PI) surface.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.341-347
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• 1998

We analyzed photoreflectance (PR) characterization of the $Al_xGa_{1-x}As$ epilayer grown by molecular beam epitaxy (MBE) method. The band-gap energy $(E_0)$ satisfying low power Franx-Keldysh (LPFK) due to GaAs buffer layer is 1.415 eV, interface electricall field $(E_i)$ is 1.05$\times$$10^4$V/cm, carrier concentration (N) is $1.3{\times}10^{15}\textrm{cm}^{-3}$. In PR spectrum intensity analysis at 300 K the $A^*$ peak below $(E_0)$ signal is low and distorted because of residual impurity in sample growth. The trap characteristic time ${\tau}_i$ of GaAs buffer layer is about 0.086 ms, and two superposed PR signal near 1.42eV consist of the third derivative signal of chemically eteched GaAs substrate and Franz-Keldysh oscillation (FKO) signal due to GaAs buffer layer.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.45 no.5
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• pp.260-266
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• 2019

Objectives: Dental implants shorter than 8 mm, called short dental implants (SDIs), have been considered to have a lower success rate than standard length implants. But recent studies have shown that SDIs have a comparable success rate, and implant diameter was more important for implant survival than implant length. Also, SDIs have many advantages, such as no need for sinus lifting or vertical bone grafting, which may limit use in medically compromised patients. Materials and Methods: In this study, 33 patients with 47 implants 7-mm long were examined over the last four years. All patients had special medical history and were categorized into 3 groups: systemic disorders, such as diabetes mellitus (controlled or uncontrolled), mental disability, and uncontrolled hypertension; oral cancer ablation with reconstruction, with or without radiotherapy; diverse osteomyelitis, such as osteoradionecrosis and bisphosphonate-related osteonecrosis of the jaw. Most of these patients have insufficient residual bone quality due to mandible atrophy or sinus pneumatization. Results: The implant diameters were 4.0 (n=38), 4.5 (n=8), and 5.0 mm (n=1). Among the 47 implants placed, 2 implants failed before the last followup. The survival rate of 7-mm SDIs was 95.74% from stage I surgery to the last follow-up. Survival rates did not differ according to implant diameter. The mean marginal bone loss (MBL) at 3 months, 1 and 2 years was significantly higher than at implant installation, and the MBL at 1 year was also significantly higher than at 3 months. MBL at 1 and 2 years did not differ significantly. Conclusion: Within the limitations of the present study, the results indicate that SDIs provide a reliable treatment, especially for medically compromised patients, to avoid sinus lifting or vertical bone grafting. Further, long-term follow-up is needed.