• International journal of advanced smart convergence
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• 제5권2호
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• pp.24-37
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• 2016

This paper proposes to increase the efficiency of energy in nodes, which rapidly drops during the transmission of the Low Energy Adaptive Clustering Hierarchy (LEACH), through the use of dual-hop layered application in the sensor field. Along with introducing the dual-hop method in the data transmission, the proposed single-hop method for short-range transmission and multi-hop transmission method between the cluster heads for remote transmission were also introduced. Additionally, by introducing a partial multi-hop method in the data transmission, a single-hop method for short range transmission method between the cluster heads for remote transmission was used. In the proposed DL-LEACH, the energy consumption of the cluster head for remote transmission reduced, as well as increased the energy efficiency of the sensor node by reducing the transmission distance and simplifying the transmission route for short-range transmission. As compared the general LEACH, it was adapted to a wider sensor field.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.387-394
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• 2013

As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.320-323
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• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2016년도 전력전자학술대회 논문집
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• pp.147-148
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• 2016

본 논문에서는 원격 플라즈마 발생장치 (Remote Plasma Generator, RPG)에 적용하기 위한 공진형 토폴로지에 대해 비교한다. 원격 플라즈마 발생장치는 AC-DC 정류기, DC-AC 인버터, 공진탱크, 플라즈마 발생용 리액터, 점화장치로 구성되며, 이는 기존의 SMPS와 유사한 구성이다. 하지만 플라즈마 부하는 기존의 전력전자 어플리케이션들과는 달리 점화조건과 플라즈마 유지 조건을 충족시켜야 한다는 특징이 있다. 따라서 본 논문에서는 각 공진형 토폴로지들의 특성 비교 분석을 통해 원격 플라즈마 발생장치에 대한 적용 가능성에 대한 분석을 수행하였으며, 시뮬레이션을 통해 검증하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.105-108
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• 1995

The inter-metal dielectric SiOF films were fabricated using remote plasma-enhanced chemical vapour deposition with addition of SF$\sub$6/ gas. SiOF bond formation in these films was recognized by a chemical bonding structural study using FT-IR. The deposition rate and the dielectric constant of a deposited films were decreased with increasing SF$\sub$6/ gas. It was observed that leakage current of SiOF film was reduced the one order compared to a film without addtion of SF$\sub$6/ gas.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.243-244
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• 2009

진공 chamber 내부 plasma를 외부에서 view port를 통한 확인 및 촬영보다 효율을 높이기 위하여 chamber 내부에 무선 camera (IVC : internal vacuum camera)를 삽입하여 더 세밀하게 plasma를 촬영하였고 view port로 확인이 불가능한 부분을 촬영 및 녹화하였다. 외부 view port로 확인할 수 없는 원거리 플라즈마 소스 (remote plasma source, RPS)와 in-line type의 chamber에서 동적 (dynamic) 증착이 이루어지는 substrate에 camera를 부착하여 이동 중 target 위쪽에 방전된 plasma, ICP (inductively coupled plasma) antenna를 진공 중 chamber 내부에서 촬영 및 녹화하였다.

• 반도체디스플레이기술학회지
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• 제8권2호
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• pp.15-21
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• 2009

Atmospheric pressure plasma equipment was successfully applied to the flip chip BGA manufacturing process to improve the uniformity of flux printing process. The problem was characterized as shrinkage of the printed flux layer due to insufficient surface energy of the flip chip BGA substrate. To improve the hydrophilic characteristics of the flip chip BGA substrate, remote DBD type atmospheric pressure plasma equipment was developed and adapted to the flux print process. The equipment enhanced the surface energy of the substrate to reasonable level and made the flux be distributed over the entire flip chip BGA substrate uniformly. This research was the first adaptation of the atmospheric pressure plasma equipment to the flip chip BGA manufacturing process and a lot of possible applications are supposed to be extended to other PCB manufacturing processes such as organic cleaning, etc.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제32회 학술대회 초록집
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• pp.91-91
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제13회 학술발표회 논문개요집
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• pp.23-23
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• 1997

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제13회 학술발표회 논문개요집
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• pp.28-28
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• 1997