• Transactions on Electrical and Electronic Materials
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• 제7권2호
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• pp.72-75
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• 2006

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(Zr/Ti=60/40) paste was made and alternately screen-printed on the $Al_2O_3$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films was decreased with increasing the applied pressure and the thick films pressed at $0.6ton/cm^2$ showed the dense microstructure and thickness of about $76{\mu}m$. The relative dielectric constant increased with increasing the applied pressure. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at $0.6ton/cm^2$ were $16.6{\mu}C/cm^2$, 76.9 kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.11-12
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• 2005

[ $Pb(Zr_{0.48}Ti_{0.52})O_3$ ] (PZT) thin films were deposited on Pt(111)/Ti/$SiO_2$/Si substrates by pulsed laser deposition. In order to study the effect of different laser pulse repetition rate on the dielectric and ferroelectric properties of PZT thin films,2 Hz and 5 Hz of laser pulse repetition rate were selected. We compared the results of XRD pattern, dielectric constant and hysteresis characteristics. From the experimental data, we found that the electrical properties of PZT thin films which grown ar 2 Hz of laser pulse repetition rate were better than those which grown at 5 Hz of laser pulse repetition rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.24-27
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• 1994

Variations with structural and electrical properties of Yttrium added PZT thin films were observed and measured respectively. Area of rosette was increased by Yttrium added and shapes of hysteresis curves were changed to slim type. $Y^{3+}$ ion substituted $Pb^{2+}$ ion and played the role of doner. Because the creation of space charges was restricted by Yttrium, degradation of remanent polarizations by cumutation of polarization reversals of PZT was protected. But coercive field was increased because of vacancies generated Yttrium added.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.1243-1244
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.194-197
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• 2006

Lead-free bismuth-layered perovskite ferroelectric europium-substituted $Bi_{4}Ti_{3}O_{12}(BTO)$ thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process. $Bi(TMHD)_3,\;Eu(THMD)_3,\;Ti(OiPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from $600^{\circ}\;to\;720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BET thin films annealed at $720^{\circ}C\;was\;25.95{\mu}C/cm^2$ at an applied voltage of 5 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.83-86
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• 1998

Ferroelectric PZT(40/67)/PZT(60/40)heterolayered thin films were Prepared by the alkoxide-based Sol-Gel method. PZT(40/60) and PZT(60/40) stock solutions were made and spin-coated on the P7Ti/Si02/Si substrate alternately. These PZT(40/60) and PZT(60/40) films were dried at 300$^{\circ}C$ for 30min to remove organic materials and were sintered at 650$^{\circ}C$ for 1 hour to crystalize into a perovskite structure. The coating and heating procedure were repeated 6 times to form heterolayered films. Increasing the number of coating, coercive field was decreased. The relative dielectric constant, loss, remanent polarization and coercive field of the 4-coated PZT heterolayered were 1200, 4.1[%], 30.794[${\mu}$C/㎡] and 147.22[kV/cm], respectively.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.57-61
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• 1998

In this study, PLZT stock solutions were prepared by Sol-Gel processing after the compositions were selected in the memory region of PLZT bulk phase diagram. PLZT solutions were deposited on the ITO glass substrate by spin-coating method. The thin films were annealed by rapid thermal processing. The electric characteristics, hysteresis loop, C-V characteristics of thin films in the memory region were measured in order to investigate the electrical characteristics of PLZT thin films. In selected compositions the decrease in Zr/Ti ratio led to an increase in dielectric constant and the decrease in remanent polarization and coercieve field which brought about slim hysteresis loop.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.611-615
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• 2003

Eu-doped lead zirconate titanate(Pb$\sub$1.1/(Zr$\sub$0.6/Ti$\sub$0.4/)O$_3$; PZT) thin films on the Pt/Ti/SiO$_2$/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1703-1704
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.92-96
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• 1998

Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.