• 전기의세계
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• v.28 no.2
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• pp.68-75
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• 1979

The penetration of an electro-magnetic wave through an aperture in a cylindrical structure with a center dielectric-rod is investgated. By using a standard mode matching procedure, the electrical and magnetic fields in a cavity are determined as a function of position inside the cavity and frequency of the incident field. For the given parameters, computed data are obtained and the results exhibited in form of amplitude curves of the nor malized field and energy densities of functions of position and frequency. Depending on the increase of the relative dielectric constant of center dielectric-rod, the resonance frequecies of the cavity vary as the cavity size decrease. The stored electro-magnetic energy varies very rapidly as a function of position inside the cavity and of the source frequency. Its peak value can be two orders of magnitude greater than the incident energy density. The frequencies where the peaks occur can be identified approximately as the resonance frequencies of the cavity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.667-670
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• 2004

The dielectric properties of PZT(4060)/(6040) multilayered thin films with substrate temperature were investigated. PZT(4060)/(6040) thin films were deposited by RF sputtering method on Pt/Ti/$SiO_2$/Si substrates with different substrate temperature of $200{\sim}700^{\circ}C$. Increasing the substrate temperature, perovskite structure was increased, and PZT (001), (110), (002), (200) peaks were increased. The relative dielectric constant and dielectric loss of PZT(4060)/(6040) multilayered thin films at the substrate temperature of $700^{\circ}C$ were 843 and 2.45, respectively at 1000(Hz).

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.69-72
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• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.83-87
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• 2003

Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.57-60
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• 2000

In this paper, study on the properties of the thermal degradated epoxy resin which is used in indoor insulation apparatus is performed to investigate the problems of the decreasing insulation characteristics and crack in the indoor insulation apparatus. As a parameter of variation, SEM, contact angle, surface resistivity, relative dielectric constant and weight loss are measured. As the results of the above measurements, the contact angle and surface resistivity of the epoxy resin has increased to 200$^{\circ}C$ in but at the above 200$^{\circ}C$ the values have decreased. The relative dielectric constants the thermal treated samples have increased on with the temperature increase. We find the volatile components of the epoxy resin compound has disappeared during thermal degradation by SEM. The insulation properties of the epoxy resin have increased by the 200$^{\circ}C$ but decreased in the above 200$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1293-1298
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• 1994

(Zr, Sn)TiO4 powders were prepared in 0.05~0.13 ${\mu}{\textrm}{m}$ by coprecipitating (Zr4+, Ti4+)hydroxide on SnO2 particles and followed by calcination at 90$0^{\circ}C$ for 2 h. They sinter to 95% of relative density at 140$0^{\circ}C$ for 2 h. and shows dielectric constant, $\varepsilon$r=37.5 and quality factor, Qxf(GHz)=46,000. With 3 mol% of ZnO it sinters to rel=97.5%, $\varepsilon$r=39 and Qxf(GHz)=40,050 at 135$0^{\circ}C$ for 2 h., but raising sintering temperature to 140$0^{\circ}C$ deteriorates quality factor, relative density and microstructure with developing second phase.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1572-1574
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• 2000

In this paper, study on the properties of the thermal degradated epoxy resin which is used in cast resin transformer is performed to investigate the problems of the decreasing insulation characteristics and crack in the cast resin transformer. In the test, contact angle, weight loss, surface resistivity and relative dielectric constant are measured. As the results of the above measurements, the epoxy resin has increased to 150$^{\circ}C$ in the contact angle and surface resistivity but at the above 150$^{\circ}C$ the values have decreased. The relative dielectric constants have increased in the thermal treated samples with the degradation temperature. Consequently, the insulation properties of the epoxy resin which is used in cast resin transformer have increased by the 150$^{\circ}C$ but decreased in the above 150$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.57-60
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• 2000

In this paper, study on the properties of the thermal degradated epoxy resin which is used in indoor insulation apparatus is performed to investigate the problems of the decreasing insulation characteristics and crack in the indoor insulation apparatus. As a parameter of variation, SEM, contact angle, surface resistivity, relative dielectric constant and weight loss are measured. As the results of the above measurements, the contact angle and surface resistivity of the epoxy resin has increased to 200$^{\circ}C$ in but at the above 200$^{\circ}C$ the values have decreased. The relative dielectric constants the thermal treated samples have increased on with the temperature increase. We find the volatile components of the epoxy resin compound has disappeared during thermal degradation by SEM. The insulation properties of the epoxy resin have increased by the 200$^{\circ}C$ but decreased in the above 200$^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.945-949
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• 1995

In order to investigate the performance of compression-type accelerometer on piezoelectric properties, PZT materials have been studied. The ring-shaped piezoelectric elements were prepared using commercial PZT powders by conventional ceramic process. Their estimated relative dielectric constant, piezoelectric charge constant (d33) and voltage constant (g33) values showed 390∼3400, (90∼593)×10-12 C/N and (19.5∼40.5)×10-3 V-m/N, respectively. The charge sensitivity of accelerometer is proportional to the piezoelectric charge constant value (d33) of PZT, but its voltage sensitivity is related with the piezoelectric voltage constant (g33). Since the mounted resonance frequency and sensitivity are dependent on the seismic mass as well as physical charateristics and size of PZT elements, the suitable considerations between two components are required for accelerometer's design.