• Title/Summary/Keyword: regulated cascode

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A CMOS Optical Receiver Design for Optical Printed Circuit Board (광PCB용 CMOS 광수신기 설계)

  • Kim Young;Kang Jin-Ku
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.7 s.349
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    • pp.13-19
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    • 2006
  • A 5Gb/s cross coupled transimpedance amplifier (TIA) & limiting amp(LA), regulated cascode(RGC) is realized in a 0.18$\mu$m CMOS technology for optical printed circuit board applications. The optical receiver demonstrates $92.8db{\Omega}$ transimpedance and limiting amplifier gain, 5Gb/s bandwidth for 0.5pF photodiode capacitance, and 9.74mW power dissipation from 1.8V, 2.4V supply. Input stage impedance is $50{\Omega}$. The circuit was implemented on an optical PCB, and the 5Gb/s data output signal was measured with a good data eye opening.

A 16-channel CMOS Inverter Transimpedance Amplifier Array for 3-D Image Processing of Unmanned Vehicles (무인차량용 3차원 영상처리를 위한 16-채널 CMOS 인버터 트랜스임피던스 증폭기 어레이)

  • Park, Sung Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.12
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    • pp.1730-1736
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    • 2015
  • This paper presents a 16-channel transimpedance amplifier (TIA) array implemented in a standard $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR (PSL) systems. Since this array is the front-end circuits of the PSL systems to recover three dimensional image for unmanned vehicles, low-noise and high-gain characteristics are necessary. Thus, we propose a voltage-mode inverter TIA (I-TIA) array in this paper, of which measured results demonstrate that each channel of the array achieves $82-dB{\Omega}$ transimpedance gain, 565-MHz bandwidth for 0.5-pF photodiode capacitance, 6.7-pA/sqrt(Hz) noise current spectral density, and 33.8-mW power dissipation from a single 1.8-V supply. The measured eye-diagrams of the array confirm wide and clear eye-openings up to 1.3-Gb/s operations. Also, the optical pulse measurements estimate that the proposed 16-channel TIA array chip can detect signals within 20 meters away from the laser source. The whole chip occupies the area of $5.0{\times}1.1mm^2$ including I/O pads. For comparison, a current-mode 16-channel TIA array is also realized in the same $0.18-{\mu}m$ CMOS technology, which exploits regulated-cascode (RGC) input configuration. Measurements reveal that the I-TIA array achieves superior performance in optical pulse measurements.

10 Gbps Transimpedance Amplifier-Receiver for Optical Interconnects

  • Sangirov, Jamshid;Ukaegbu, Ikechi Augustine;Lee, Tae-Woo;Cho, Mu Hee;Park, Hyo-Hoon
    • Journal of the Optical Society of Korea
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    • v.17 no.1
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    • pp.44-49
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    • 2013
  • A transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode (RGC) input stage has been designed and implemented for optical interconnects. The optical TIA-Rx chip is designed in a 0.13 ${\mu}m$ CMOS technology and works up to 10 Gbps data rate. The TIA-Rx chip core occupies an area of 0.051 $mm^2$ with power consumption of 16.9 mW at 1.3 V. The measured input-referred noise of optical TIA-Rx is 20 pA/${\surd}$Hz with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of 408 $GHz{\Omega}/mW$.

A 5-Gb/s CMOS Optical Receiver with Regulated-Cascode Input Stage for 1.2V Supply (1.2V 전원전압용 RGC 입력단을 갖는 5-Gb/s CMOS 광 수신기)

  • Tak, Ji-Young;Kim, Hye-Won;Shin, Ji-Hye;Lee, Jin-Ju;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.3
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    • pp.15-20
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    • 2012
  • This paper presents a 5-Gb/s optical receiver circuit realized in a $0.13-{\mu}m$ CMOS technologies for the applications of high-speed digital interface. Exploiting modified RGC input stage at the front-end transimpedance amplifier, interleaving active feedback and source degeneration techniques at the limiting amplifier, the proposed optical receiver chip demonstrates the measured results of $72-dB{\Omega}$ transimpedance gain, 4.7-GHz bandwidth, and $400-mV_{pp}$differential output voltage swings up to the data rate of 5-Gb/s. Also, the chip dissipates 66mW in total from a single 1.2-V supply, and occupies the area of $1.6{\times}0.8mm^2$.

High-Accuracy Current Mirror Using Adaptive Feedback and its Application to Voltage-to-Current Converter (적응성 귀환을 이용한 고정도 전류 미러와 이를 이용한 전압-전류 변환기)

  • Cha, Hyeong-U;Kim, Hak-Yun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.4
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    • pp.93-103
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    • 2002
  • A new current mirror for high-accuracy current-mode signal processing and integrated circuit design was proposed. The current mirror adopts the technique of an adaptive feedback to reduce the input impedance and the output stage of regulated cascode current mirror to increase the output impedance. Simulation results show that the current mirror has input impedance of 0.9Ω, the output impedance of 415 MΩ, and current gain of 0.96 at the supply voltage Vcc=5V. The power dissipation is 1.5㎽. In order to certify the applicability of the proposed current mirror, a voltage-to-current converter using the current mirror is designed. Simulation results show that the converter has good agreement with theoretical equation and has three times better conversion characteristics when compared with voltage-to-current converter using Wilson current mirror.

A Design of Class A Bipolar Current Conveyor(CCII) with Low Current-Input Impedance and Its Offset Compensated CCII (낮은 전류-입력 임퍼던스를 갖는 A급 바이폴라 전류 콘베이어(CCII)와 그것의 오프셋 보상된 CCII 설계)

  • Cha, Hyeong-U
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.10
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    • pp.754-764
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    • 2001
  • Class A bipolar second-generation current conveyor (CCII) with low current-input impedance and its offset-compensated CCII for high-accuracy current-mode signal processing are proposed. The CCIIs consist of a regulated current-cell for current input, a emitter follower for voltage input, and a cascode current mirror lot current output. In these architecture, the two input stages are coupled by current mirror to reduce the current input impedance. Experiments show that the CCII has impedance of 8.4 Ω and offset voltage of 40 mV at current input terminal. To reduce this offset, the offset-compensated CCII adopts diode-connected npn and pnp transistor in the proposed CCII. Experiments show that the offset-compensated CCII has current input impedance of 2.1 Ω and offset voltage of 0.05 mV. The 3-dB cutoff frequency of the CCIIs when used as a voltage follower extends beyond 30 MHz. The power dissipation is 7.0 mW

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