• Resources Recycling
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• v.28 no.3
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• pp.45-52
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• 2019

$TiO_2$ as a raw material for producing titanium can be produced by carbon reduction of natural ilmenite ores over 1823 K and acid leaching of the obtained titanium-rich slag. However, the conventional process can cause very high energy consumption and a large amount of leaching residues. In the present study, we proposed the sulfurization of $FeTiO_3$ with $Na_2SO_4$ at temperatures below 1573 K, which can separate Fe in $FeTiO_3$ as the FeS based sulfide phase and Ti as the $TiO_2-Na_2O$ based oxide phase. This study is a fundamental study for sulfurization of $FeTiO_3$ to investigate the influence of reducing atmosphere, reaction temperature and the sulfur/Fe ratio on the separability and distribution behaviors of of Fe, Ti, and Na between the oxide phase and the sulfurized phase. At 1573 K and carbon saturation condition, the Fe can be separated from $FeTiO_3$ as Fe-C-S metal and a part of FeS, and the concentration of Fe in oxide decreased to 4 mass% after sulfurization.

• Resources Recycling
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• v.22 no.3
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• pp.57-64
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• 2013

Sulfurization reaction characteristics of $Eu_2O_3$, uranium oxides($UO_2$, $U_3O_8$), mixture of $Eu_2O_3$ and uranium oxides, Eu-doped uranium oxides($(U,Eu)O_2$, $(U,Eu)_3O_8$), and phase-separated products prepared by HOX (High temperature OXidation) of $(U,Eu)O_2$ were investigated in the temperature range from 400 to $800^{\circ}C$. Only $Eu_2O_3$ in the mixture of $Eu_2O_3$ and uranium oxides was converted into $Eu_3S_4$ by sulfurization reaction at $450^{\circ}C$ without reaction between them. Sulfurization reaction behavior of $(U,Eu)_3O_8$ and $(U,Eu)O_2$ up to $600^{\circ}C$ was similar to $U_3O_8$ and $UO_2$, respectively, while they were sulfurized into Eu-rich $(U,Eu)S_x$ and ${\alpha}-US_2$ at $800^{\circ}C$. In the sulfurization of RE-rich $(U,Eu)_4O_9$ and $U_3O_8$ prepared by high temperature oxidation, it was confirmed that RE-rich $(U,Eu)S_x$ and UOS phases were formed at $600^{\circ}C$. For Eu-rich $(U,Eu)O_2$ and $UO_2$ prepared by reduction of HOX products, it was identified that Eu-rich (U,Eu)OS was formed at $450^{\circ}C$ by sulfurization of Eu-rich $(U,Eu)O_2$, while $UO_2$ remained unreacted.

• Journal of the Korean Applied Science and Technology
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• v.37 no.4
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• pp.723-732
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• 2020

The spent RHDS (Residue HydroDeSulfurization) catalyst is deactivated mainly by deposition of various contaminants such as coke, sulfur and vanadium on the surface of catalyst. To eliminate those contaminants, the following remanufacturing process was conducted. The first, heavy oil on the surface of the spent RHDS catalyst was removed by kerosene and dehydrated. The second, the high temperature incineration was carried out to eliminate coke and sulfur components deposited on the surface of spent RHDS catalyst. The third, the excessive quantity of Vanadium deposited on the surface of catalyst was removed by leaching process as follows: ultrasonic agitation was carried out at 50℃, for 10 seconds with 0.5% and 1% oxalic acid solution. The purpose of this process is to find out regenerated RHDS catalyst can be used as SCR catalyst for NOx reduction by controlling the vanadium residual content of the regenerated RHDS catalyst through leaching process. The composition of regenerated RHDS catalyst was analyzed by XRF and the NOx reduction efficiency was also measured by continuous catalytic fixed bed reactor. As the result, regenerated catalyst, with 0.5% oxalic acid, ultrasonic agitation in 10 seconds, showed the most stable NOx reduction efficiency. Also, in comparison with commercial SCR catalyst, the NOx reduction performance of regenerated catalyst was similar to that of commercial SCR catalyst at the temperature 375℃ and higher whereas was lower than commercial SCR catalyst at the temperature range between 200~250℃. Therefore, it was confirmed that the regenerated catalyst as powder form wash coated on the surface of metal corrugated substrate can be used for commercial SCR catalyst.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.287.1-287.1
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• 2013

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reductionsulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.