• Title/Summary/Keyword: reduction DC voltage

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Electro-optical (EO) characteristics of photo-aligned TN-LCD on PM4Ch surfaces (PM4Ch 표면을 이용한 광배향 TN-LCD의 전기광학특성)

  • Hwang, Jeoung-Yeon;Park, Sang-Gun;Park, Tae-Kyu;Seo, Dae-Shik;Suh, Dong-Hack
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1765-1767
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    • 1999
  • We synthesised a photo-alignment material of PM4Ch (poly(4-methacryloylloxychalcone)). The electro-optical (EO) characteristics of photo-aligned twisted nematic (TN)-liquid crystal display (LCD) with linearly polarized ultraviolet (UV) light irradiation on PM4Ch surface were investigated. The uniform alignment of NLC with polarized UV light irradiation on PM4Ch surface was measured. Also, We had The excellent voltage-transmittance characteristics of photo-aligned TN-LCD. The low threshold voltage of photo-aligned TN-LCD was measured. Moreover, the fast response time of photo-aligned TN-LCD on PM4Ch was successfully achieved. Finally The reduction DC voltage of photo-aligned TN-LCD decreases with increasing the UV light irradiation time on photo-dimerized PM4Ch surface.

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Redundancy Module Operation Analysis of MMC using Scaled Hardware Model (축소모형을 이용한 MMC의 Redundancy Module 동작분석)

  • Yoo, Seung-Hwan;Shin, Eun-Suk;Choi, Jong-Yun;Han, Byung-Moon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.8
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    • pp.1046-1054
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    • 2014
  • In this paper, a hardware prototype for the 10kVA 11-level MMC was built and various experimental works were conducted to verify the operation algorithms of MMC. The hardware prototype was designed using computer simulation with PSCAD/EMTDC software. After manufactured in the lab, the hardware prototype was tested to verify the modulation algorithms to form the output voltage, the balancing algorithm to equalize the sub-module capacitor voltage, and the redundancy operation algorithm to improve the system reliability. The developed hardware prototype can be utilized for analyzing the basic operation and performance improvement of MMC according to the modulation and redundancy operation scheme. It also can be utilize to analyze the basic operational characteristics of HVDC system based on MMC.

Flashover Characteristics of the Horizontal Air Gaps Caused by Combustion Flames (연소화염에 의한 수평배치 공기갭의 섬락전압 특성)

  • 김인식;김이국;김충년;지승욱;이상우;이광식
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.1
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    • pp.27-34
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    • 2002
  • In this paper, characteristics of the ac and dc flashover voltage in the horizontal air gap of a needle-needle electrode system were investigated when the combustion flame was present near the high-voltage electrode. In order to examine the flashover phenomena and the corona inception voltages caused by flame we measured the voltage and current waveforms when the corona and the flashover was occurred. We also observed, as increasing the applied voltages, the deflection or fluctuation phenomena in the shape of flames caused by the corona wind and the coulomb's force. As the results of an experimental investigation, we found that the reduction of flashover voltages, in comparison with the no-flame case, are 62.7[%] for k=1.0, 34.2[%] for h=5[cm], 27.3[%] for h=7[cm] and 21.4[%] for h=9[cm] when ac voltage is applied.

The Switching Characteristic and Efficiency of New Generation SiC MOSFET (차세대 전력반도체 SiC MOSFET의 스위칭 특성 및 효율에 관한 연구)

  • Choi, Won-mook;Ahn, Ho-gyun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.2
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    • pp.353-360
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    • 2017
  • Recently, due to physical limitation of Si based power semiconductor, development speed of switching power semiconductors is falling and it is difficult to expect any further performance improvements. SiC based power semiconductor with superior characteristic than Si-based power semiconductor have been developed to overcome these limitations. however, there is not method to apply for real system. Therefore, suggested the feasibility and solution for SiC-based power semiconductor system. design to 1kW class DC-DC boost converter and demonstrated the superiority of SiC MOSFET under the same operating conditions by analyzing switching frequency, duty ratio, voltage and current, and comparing with Si based power semiconductor through experimental efficiency according to each system load. The SiC MOSFET has high efficiency and fast switching speed, and can be designed with small inductors and capacitors which has the advantage of volume reduction of the entire system.

Gate length scaling behavior and improved frequency characteristics of In0.8Ga0.2As high-electron-mobility transistor, a core device for sensor and communication applications (센서 및 통신 응용 핵심 소재 In0.8Ga0.2As HEMT 소자의 게이트 길이 스케일링 및 주파수 특성 개선 연구)

  • Jo, Hyeon-Bhin;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
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    • v.30 no.6
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    • pp.436-440
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    • 2021
  • The impact of the gate length (Lg) on the DC and high-frequency characteristics of indium-rich In0.8Ga0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (LSD) of 0.8 ㎛ with different values of Lg ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (VT) roll-off behavior against Lg was observed clearly, and the maximum transconductance (gm_max) improved as Lg scaled down to 19 nm. In particular, the device with an Lg of 19 nm with an LSD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a gm_max of 2.5 mS/㎛, On resistance (RON) of 261 Ω·㎛, current-gain cutoff frequency (fT) of 738 GHz, and maximum oscillation frequency (fmax) of 492 GHz. The results indicate that the reduction of Lg to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

Fully Differential 5-GHz LC-Tank VCOs with Improved Phase Noise and Wide Tuning Range

  • Lee, Ja-Yol;Park, Chan-Woo;Lee, Sang-Heung;Kang, Jin-Young;Oh, Seung-Hyeub
    • ETRI Journal
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    • v.27 no.5
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    • pp.473-483
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    • 2005
  • In this paper, we propose two LC voltage-controlled oscillators (VCOs) that improve both phase noise and tuning range. With both 1/f induced low-frequency noise and low-frequency thermal noise around DC or around harmonics suppressed significantly by the employment of a current-current negative feedback (CCNF) loop, the phase noise in the CCNF LC VCO has been improved by about 10 dB at 6 MHz offset compared to the conventional LC VCO. The phase noise of the CCNF VCO was measured as -112 dBc/Hz at 6 MHz offset from 5.5 GHz carrier frequency. Also, we present a bandwidth-enhanced LC VCO whose tuning range has been increased about 250 % by connecting the varactor to the bases of the cross-coupled pair. The phase noise of the bandwidth-enhanced LC-tank VCO has been improved by about 6 dB at 6 MHz offset compared to the conventional LC VCO. The phase noise reduction has been achieved because the DC-decoupling capacitor Cc prevents the output common-mode level from modulating the varactor bias point, and the signal power increases in the LC-tank resonator. The bandwidth-enhanced LC VCO represents a 12 % bandwidth and phase noise of -108 dBc/Hz at 6 MHz offset.

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An Improvement of the Gas Discharge Structure of the AMD Gate PDP (AND Gate PDP의 기체방전구조 개선)

  • Ryeom, Jeong-Duk
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.18 no.5
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    • pp.42-47
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    • 2004
  • This research has improved the problem of discharge AND gate PDP proposed before. The polarity of the DC discharge which composes AND gate is reversely designed and the cross talk problem to the adjacent scanning electrode has been improved. The AND gate proposed before operated by using non-linearity of the discharge by the space charge. In this research, new discharge NOT logic in which it was used that an applied voltage changed with the discharge circuit was added to AND gate. AND gate came to operate more stably. A selective address was able to be discharged with four horizontal scanning electrodes from the experiment result. The operation margin of the AND gate discharge obtained 34V and of the address discharge obtained 70V.

High-Power-Density Power Conversion Systems for HVDC-Connected Offshore Wind Farms

  • Parastar, Amir;Seok, Jul-Ki
    • Journal of Power Electronics
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    • v.13 no.5
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    • pp.737-745
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    • 2013
  • Offshore wind farms are rapidly growing owing to their comparatively more stable wind conditions than onshore and land-based wind farms. The power capacity of offshore wind turbines has been increased to 5MW in order to capture a larger amount of wind energy, which results in an increase of each component's size. Furthermore, the weight of the marine turbine components installed in the nacelle directly influences the total mechanical design, as well as the operation and maintenance (O&M) costs. A reduction in the weight of the nacelle allows for cost-effective tower and foundation structures. On the other hand, longer transmission distances from an offshore wind turbine to the load leads to higher energy losses. In this regard, DC transmission is more useful than AC transmission in terms of efficiency because no reactive power is generated/consumed by DC transmission cables. This paper describes some of the challenges and difficulties faced in designing high-power-density power conversion systems (HPDPCSs) for offshore wind turbines. A new approach for high gain/high voltage systems is introduced using transformerless power conversion technologies. Finally, the proposed converter is evaluated in terms of step-up conversion ratio, device number, modulation, and costs.

Multi-Phase Buck Converter with Fast Transient Response (빠른 응답을 갖는 멀티페이스 벅 변환기)

  • Lee, Yoon-Jae;Roh, Jeongjin
    • Journal of IKEEE
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    • v.20 no.3
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    • pp.314-317
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    • 2016
  • Recently, efforts to maximize battery life in progress with an increase in the demand for portable devices. In this paper, we propose multi-phase buck converter with fast transient response. Multi-phase buck converter may be used for the output capacitor of small size because the ripple cancellation effect, it is possible to use an inductor having an inductance less. The portable device for quick change from standby mode to active 4-phase design structure was given a fast transient response. The proposed multi-phase buck converter was fabricated using a 0.18 um CMOS process and the supply voltage ranges from 2.7V to 3.3V, the maximum load current is 500mA and settling time is 10us.

A study on the Conducted Noise Reduction in Three-Phase Boost Converter using Random Pulse Width Modulation (Random PWM 기법을 이용한 3상 승압형 컨버터 전도노이즈 저감에 관한 연구)

  • Jung, Dong-Hyo
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.51 no.3
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    • pp.120-125
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    • 2002
  • The switching-mode power converter has been widely used because of its features of high efficiency and small weight and size. These features are brought by the ON-OFF operation of semiconductor switching devices. However, this switching operation causes the surge and EMI(Electromagnetic Interference) which deteriorate the reliability of the converter themselves and entire electronic systems. This problem on the surge and noise is one of the most serious difficulties in AC-to-DC converter. In the switching-mode power converter, the output voltage is generally controlled by varying the duty ratio of main switch. When a converter operates in steady state, duty ratio of the converter is kept constant. So the power of switching noise is concentrated in specific frequencies. Generally, to reduce the EMI and improve the immunity of converter system, the switching frequency of converter needs to be properly modulated during a rectified line period instead of being kept constant. Random Pulse Width Modulation (RPWM) is performed by adding a random perturbation to switching instant while output-voltage regulation of converter is performed. RPWM method for reducing conducted EMI in single switch three phase discontinuous conduction mode boost converter is presented. The more white noise is injected, the more conducted EMI is reduced. But output-voltage is not sufficiently regulated. This is the reason why carrier frequency selection topology is proposed. In the case of carrier frequency selection, output-voltage of steady state and transient state is fully regulated. A RPWM control method was proposed in order to smooth the switching noise spectrum and reduce it's level. Experimental results are verified by converter operating at 300V/1kW with 5%~30% white noise input. Spectrum analysis is performed on the Phase current and the CM noise voltage. The former is measured with Current Probe and the latter is achieved with LISN, which are connected to the spectrum analyzer respectively.