• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.10
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• pp.1427-1435
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• 2002

The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3093-3098
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• 2010

The core-shell $SnO_2$@AO (A=Ni, Cu, Zn and Mg) films were prepared and the effects of coatings on photovoltaic properties were investigated. Studies on X-ray photoelectron spectroscopy, energy dispersive X-ray analysis and transmission electron microscopy showed the formation of divalent oxides on the surface of $SnO_2$ nanoparticles. It was commonly observed that all the dye-sensitized core-shell films exhibited higher photovoltage than the bare $SnO_2$ film. Transient photovoltage measurements confirmed that the improved photovoltages were related to the decreased time constants for electron recombination.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.111-115
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• 2015

To improve the efficiency of the Si solar cell, high minority carrier life time is required. Therefore, the passivation technology is important to eliminate point defects on the silicon surface, causing the loss of minority carrier recombination. PECVD or post-annealing of thermally-grown $SiO_2$ is commonly used to form the passivation layer, but a high-temperature process and low thermal stability is a critical factor of low minority carrier lifetime. In this study, atomic layer deposition was used to grow the $Al_2O_3$ passivation layer at low temperature process. $Al_2O_3$ was selected as a passivation layer which has a low surface recombination velocity because of the fixed charge density. For the high charge density, an improved minority carrier lifetime, and a low surface recombination, nitrogen was doped in the $Al_2O_3$ thin film and the improvement of passivation was studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.636-639
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• 2001

InGaN/GaN multiple quantum wells (MQWs) grown with various growth interruptions between the InGaN well and GaN barrier by metal-organic chemical vapor deposition were investigated using photoluminescence, high-resolution transmission electron microscopy, and energy filtered transmission electron microscopy (EFTEM). The luminescence intensity of the MQWs with growth interruptions is abruptly reduced compared to that of the MQW without growth interruption. Also, as the interruption time increases the peak emission shows a continuous blue shift. Evidence of indium clustering is directly observed both by using an indium ratio map of the MQWs and from indium composition measurements along an InGaN well using EFTEM. The higher intensity and lower energy emission of light from the MQW grown without interruption showing indium clustering is believed to be caused by the recombination of excitons localized in indium clustering regions and the increased indium composition in these recombination centers.

• Journal of Fashion Business
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• v.18 no.2
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• pp.113-131
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• 2014

This study aims to examine the background to the rise of Rei Kawakubo, a Japanese designer who achieved fame by suggesting the concept of deconstruction and recombination of clothes, and to look at environment of the time, the formative characteristics of her design and the Japanese aesthetic sense inherent in her design. As the method of research, collections that Kawakubo unveiled over the past 10 years starting in 2004 were examined, and a survey of the literature was conducted to describe the background of her growth and the Japanese aesthetic sense inherent in the design. According to the study, Kawakubo grew up in the ruins of a war, and went through a time of great tumult, when Western culture was mixing with Japan's traditional culture. She taught herself a method of creation involving the deconstruction of clothes, and their recombination. For this reason, her design from the beginning was inevitably focused on deconstructing clothes before they could be recombined. Through analyses of her collections, it was found that the formative characteristics of her design were characterized by asymmetry, incompleteness, humor and hybridity. Kawakubo created clothes under the influence of an ethnicity that was shrouded in individuality and a traditional aesthetic sense, and the formative characteristics of her design defined by asymmetry, incompleteness, humor and hybridity were closely related to the hybridity represented by Wabi (わび), Yugen (幽玄), Okashi (をかし) and Zakyo (雜居).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.7C
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• pp.459-466
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• 2011

This paper addresses the problem in the acquisition of binary offset carrier (BOC) signals employed in global navigation satellite systems, which is caused by the multiple side-peaks of the BOC autocorrelation function. We first observe that the side-peaks arise due to the fact that the BOC autocorrelation is made up of the sum of the sub-correlations shaped irregularly, and then, propose a novel acquisition scheme based on a recombination of the sub-correlations with cyclostationarity. The proposed scheme is demonstrated to remove the side-peaks completely for any type of BOC signal and to provide a performance improvement over the conventional schemes in terms of the mean acquisition time.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.119-119
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• 2010

We report strong exciton transition and exciton-phonon couplings in photoluminescence (PL) of ZnO thin films grown on MgO/sapphire (buffer/substrate) by plasma-assisted molecular beam epitaxy. The PL spectra at 10 K showed the intensity of the dominant emission, donor-bound exciton transition of front surface (top surface, the latter part in growth) is found to be about 100 times higher than that of back surface (in-depth bottom area, the initial part), while the room temperature PL spectra showed dominant contributions from the free exciton emissions and phonon-replicas of free excitons for front surface and back surface, respectively, It could be attributed to the strong contributions of exciton-phonon coupling. Time resolved PL spectra reveal that the life time of exciton recombination from the front surface are longer than those from back surface. This is most probably due to the fact that reduction of non-radiative recombination in the front surface. This investigation indicates that the existence of native defects or trap centers which can be reduced by the proper initial condition in growth and the exciton-phonon interaction couplings play an important role in optical properties and crystal quality of ZnO thin films.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.418-418
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• 2000

This paper proposes a path planning algorithm for mobile robot. To generate an optimal path and minimum time path for a mobile robot, we use the Genetic Algorithm(GA) and Visibility Graph. After finding a minimum-distance between start and goal point, the path is revised to find the minimum time path by path-smoothing algorithm. Simulation results show that the proposed algorithms are more effective.

• Journal of Microbiology and Biotechnology
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• v.27 no.12
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• pp.2221-2227
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• 2017

Echovirus serotype 30 (ECHO30) has been responsible for several recent worldwide outbreaks of viral meningitis. In Zhejiang Province, China, ECHO30 has been one of the main causes of viral meningitis for years. This study, using phylogenetic analysis of the VP1 gene, was performed to investigate the general molecular epidemiology and genetic patterns of ECHO30 circulating in Zhejiang Province between the years 2002 and 2015. The nucleotide sequences of ECHO30 VP1 showed that they were 64.8% identical with the prototype strain, Bastianni, while the amino acids were 84.9% identical. Phylogenetic analyses showed that ECHO30 in the Zhejiang area has diverged into two genotypes. Genotype I consists of strains isolated since 2002, whereas genotype II includes strains that were mainly isolated during the 2002 to 2004 outbreak. ECHO30 has been endemically circulating in both humans and the environment for a long period of time. Additionally, we evaluated the significance of recombination presented during the years 2005 to 2007 to demonstrate that recombination plays an important role in the prevalence of ECHO30 in the Zhejiang area.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.38-42
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• 2018

Continuous efforts are being made to improve the efficiency of Si solar cells, which is the prevailing technology at this time. As opposed to the standard front-lit solar cell design, the back-lit design suffers no shading loss because all the metal electrodes are placed on one side close to the pn junction, which is referred to as the front side, and the incoming light enters the denuded back side. In this study, a systematic comparison between the two designs was conducted by means of computer simulation. Medici, a two-dimensional semiconductor device simulation tool, was utilized for this purpose. The $0.6{\mu}m$ wavelength, the peak value for the AM-1.5 illumination, was chosen for the incident photons, and the minority-carrier recombination lifetime (${\tau}$), a key indicator of the Si substrate quality, was the main variable in the simulation on a p-type $150{\mu}m$ thick Si substrate. Qualitatively, minority-carrier recombination affected the short circuit current (Isc) but not the opencircuit voltage (Voc). The latter was most affected by series resistance associated with the electrode locations. Quantitatively, when ${\tau}{\leq}500{\mu}s$, the simulation yielded the solar cell power outputs of $20.7mW{\cdot}cm^{-2}$ and $18.6mW{\cdot}cm^{-2}$, respectively, for the front-lit and back-lit cells, a reasonable 10 % difference. However, when ${\tau}$ < $500{\mu}s$, the difference was 20 % or more, making the back-lit design less than competitive. We concluded that the back-lit design, despite its inherent benefits, is not suitable for a broad range of Si solar cells but may only be applicable in the high-end cells where float-zone (FZ) or magnetic Czochralski (MCZ) Si crystals of the highest quality are used as the substrate.