• Current Applied Physics
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• v.18 no.11
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• pp.1230-1234
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• 2018

We report a new method of measuring the non-radiative recombination rate in bulk Silicon. Synchrotron timeresolved x-ray scattering (TRXS) combines femtometer spatial sensitivity with nanosecond time resolution to record the temporal evolution of a crystal lattice following intense ultrafast laser excitation. Modeling this data requires an Auger recombination time that is considerably slower than previous measurements, which were made at lower laser intensities while probing only a relatively shallow surface depth. We attribute this difference to an enhanced Coulomb interaction that has been predicted to occur in bulk materials with high densities of photoexcited charge carriers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.67-70
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• 2000

In this paper, all SCR recombination currents including setback and graded layer's recombination currents are analytically introduced for the first time. Different emitter-base structures are tested to prove the validity of the model. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. In this paper, recombination current model included setback layer and graded layer is proposed. New recombination current model also includes abrupt heterojunction's recombination current model. In this paper, new recombination current model analytically explains effects of setback layer and graded layer.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.318-324
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• 2003

A time-resolved probe beam deflection (PBD) technique was employed to study the energy relaxation dynamics of photofragments produced by photodissociation of $CH_3I$ at 266 nm. Under 500 torr argon environment, experimental PBD transients revealed two energy relaxation processes; a fast relaxation process occurring within an acoustic transit time (less than 0.2 ㎲ in this study) and a slow relaxation process with the relaxation time in several tens of ㎲. The fast energy relaxation of which signal intensity depended linearly on the excitation laser power was assigned to translational-to-translational energy transfer from the photofragments to the medium. As for the slow process, the signal intensity depended on square of the excitation laser power, and the relaxation time decreased as the photofragment concentration increased. Based on experimental findings and reaction rate constants reported previously, the slow process was assigned to methyl radical recombination reaction. In order to determine the rate constant for methyl radical recombination reaction, a theoretical equation of the PBD transient for a radical recombination reaction was derived and used to fit the experimental results. By comparing the experimental PBD curves with the calculated ones, the rate constant for methyl recombination is determined to be $3.3({\pm}1.0)\;{\times}\;10^6\;s^{-1}torr^{-1}$ at 295 ± 2 K in 500 torr Ar.

• Journal of Magnetics
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• v.4 no.4
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• pp.131-135
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• 1999

The HDDR characteristics of the Nd-Fe-B-type isotropic and anisotropic HDDR alloys were investigated using three types of alloys: alloy A $(Nd_{12.6}Fe_{81.4}B_6), alloy B (Nd_{12.6}Fe_{81.3}B_6Zr_{0.1}), and alloy C (Nd_{12.6}Fe_{68.8}Co_{11.5}B_6Ga_{1.0}Zr_{0.1}$). The alloy A is featured with the isotropic HDDR character, while alloy B and C are featured with the anisotropic HDDR character. Hydrogenation and disproportionation characteristics of the alloys were examined using DTA under hydrogen gas. Recombination characteristics of the alloys were examined by observing the coercivity variation as a function of recombination time. The present study revealed that the alloy C exhibits slightly higher hydrogenation and disproportionation temperatures compared to the alloy A and B. Recombination of the anisotropic alloy B and C takes place more rapidly with respect to the isotropic alloy A. The intrinsic coercivities of the recombined materials rapidly increased with increasing the recombination time and then showed a peak, after which the coercivities decreased gradually. The degraded coercivity was, however, recovered significantly on prolonged recombination treatment. Compared with the isotropic HDDR alloy A the anisotropic HDDR alloy B and C are notable for their greater recovery of coercivity. The significant recovery of coercivity was accounted for the in terms of the development of well-defined smooth grain boundary between the recombined grains on prolonged recombination.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.71-77
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• 1992

According to increasing the doping concentration in p-n junction, a tunneling current through trap as well as SRH(Shockley-Read-Hall) generation-recombination current in depletion region occurs. It is the tunneling current that is a dominant current at the forward bias. In this paper, the new tunneling-recombination equation is derived. The thermal generation-recombination current and tunneling current though trap can be easily calculated at the same time because this equation has the same form as the SRH generation-recombination equation. For the validity of this equation, 2 kind of samples are simulated. The one is $n^{+}$-p junction device fabricated with MCT(Mercury Cadmium Telluride, mole fraction=0.29), the other Si n$^{+}-p^{+}$ junction. From the results for MCT $n^{+}$-p junction device and comparing the simulated and expermental I-V characteristics for Si n$^{+}-p^{+}$ junction, it is shown that this equation is a good description for tunneling through trap and thermal generation-recombination current calculation.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.397-406
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• 2000

Hopkinson effect in the HDDR-treated Nd$\sub$15/Fe$\sub$77/B$\sub$8/ alloy was examined in detail by means of a thermomagnetic analysis with low magnetic field (600 Oe). The emergence and magnitude of maximum in magnetisation in the thermomagnetic curve due to the Hopkinson effect was correlated to the grain structure and coercivity of the HDDR-treated material. the HDDR-treated materials showed clear Hopkinson effect (maximum in magnetisation just below the Curie temperature of the Nd$\sub$2/Fe$\sub$14/B phase) on heating in the thermomagnetic curve. Magnitude of the magnetisation rise due to the Hopkinson effect became smaller as the recombination time increased. The magnetisation recovery at room temperature on cooling from above the Curie temperature became smaller as the recombination time increased. The HDDR-treated materials with shorter recombination time, finer grain size and higher coercivity showed larger magnetisation maximum due to Hopkinson effect in the thermomagnetic curve.

• Journal of Magnetics
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• v.6 no.2
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• pp.61-65
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• 2001

The Hopkinson effect in the HDDR-treated $Nd_{15}Fe_{77}B_8$ allay was examined in detail by means of a thermo-magnetic analysis with low magnetic field (600 Oe). The emergence and magnitude of maximum in magnetisation in the thermomagnetic curve due to the Hopkinson effect was correlated with the grain structure and coercivity of the HDDR-treated material. The HDDR-treated materials showed a clear Hopkinson effect (maximum in magnetisation just below the Curie temperature of the $Nd_2Fe_{14}B\;$ phase) on heating. The magnitude of the magnetisation rise due to the Hopkinson effect became smaller as the recombination time increased. The magnetisation recovery at room temperature on cooling from above the Curie temperature became smaller as the recombination time increased. The HDDR-treated materials with shorter recombination time, finer grain size and higher coercivity showed larger magnetisation maximum due to the Hopkinson effect in the thermo-magnetic curve.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.278-282
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• 2001

The recombination motion of Partial dislocations on basal slip (0001) 1/3<1120> in sapphire ($\alpha$-Al$_2$$O_3$) single crystals was investigated using the four-point bending test with the prism plane (1120) samples. These bending experiments were carried but in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$ at various engineering stresses 90MPa, 120MPa, and 150MPa. During these tests it was shown that an incubation time was needed for basal slip to be activated. The activation energy for the incubation time was 5.6-6.0eV in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$. The incubation time is believed to be related to recombination of climb dissociated partial dislocations via self-climb. In addition, these activation energies are nearly same as those for oxygen self-diffusion in $Al_2$$O_3$ (approximately 6.3 eV). Thus, the recombination of the two partial dislocations would be possibly controlled by oxygen diffusion on the stacking fault between the partials.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.469-472
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• 2012

Intensity modulated photocurrent spectroscopy and intensity modulated photovoltage spectroscopy were investigated to measure the dynamic response of charge transfer and recombination in the standard, $TiCl_4$-treated and the combined scattering layer electrode dye-sensitized solar cells (DSSCs). IMPS and IMVS provided transit time ($\tau_n$), lifetime ($\tau_r$), diffusion coefficient ($D_n$) and effective diffusion length ($L_n$). These expressions are derived that generation, collection, and recombination of electrons in a thin layer nanocrystalline DSSC under conditions of steady illumination and with a superimposed small amplitude modulation. In this experimental, IMPS/IMVS showed that the main effect of $TiCl_4$ treatment is to suppress the recombination of photogenerated electrons, thereby extending their lifetime. And the Diffusion coefficient of combined scattering layer electrode is $6.10{\times}10^{-6}$ higher than that of the others, resulting in longer diffusion length.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.541-543
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• 1995

We propose the improved threshold current ratio method to determine the reflectivity of coated facets. The carrier recombination time used in the improved threshold current ratio method depends on the value of facet reflectivities. However, the carrier recombination time used in the conventional threshold current ratio method is constant regardless of facet reflectivities. The difference between the results of the two methods increases as the reflectivity of a coated facet decreases.