• 태양에너지
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• 제5권2호
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• pp.54-59
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• 1985

Due to the grainboundary recombination and the poor diffusion length, the polycrystalline cell efficiency is lower than the singlecrystalline cell. In order to define the effect of grains and grain-boundaries, 2 - dimensional differential diffusion equations of minority carrier are modelled. To solve them, two theoretical formulas are derived, which can be evaluated the grainboundary recombination velocity and the grain diffusion length. Also computer-aided numerical analysis is given.

• Bulletin of the Korean Chemical Society
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• 제33권2호
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• pp.469-472
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• 2012

Intensity modulated photocurrent spectroscopy and intensity modulated photovoltage spectroscopy were investigated to measure the dynamic response of charge transfer and recombination in the standard, $TiCl_4$-treated and the combined scattering layer electrode dye-sensitized solar cells (DSSCs). IMPS and IMVS provided transit time ($\tau_n$), lifetime ($\tau_r$), diffusion coefficient ($D_n$) and effective diffusion length ($L_n$). These expressions are derived that generation, collection, and recombination of electrons in a thin layer nanocrystalline DSSC under conditions of steady illumination and with a superimposed small amplitude modulation. In this experimental, IMPS/IMVS showed that the main effect of $TiCl_4$ treatment is to suppress the recombination of photogenerated electrons, thereby extending their lifetime. And the Diffusion coefficient of combined scattering layer electrode is $6.10{\times}10^{-6}$ higher than that of the others, resulting in longer diffusion length.

• Journal of Microbiology and Biotechnology
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• 제20권4호
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• pp.666-669
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• 2010

A target bacterial strain of interest for use in Red-based recombineering may already encode resistance to antibiotic markers used with current Red recombination tools, such that the resistance cannot be removed. Such cases include those where markers are needed to maintain an unstable genetic element co-resident in the strain or those where the genetic source of resistance is not known. We report the availability of PCR templates with FRT-flanked mutagenesis cassettes and plasmids encoding Red recombination functions that contain marker combinations not currently available on widely disseminated lambda Red molecular reagents. The functionality of these convenient alternative tools is demonstrated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.318-321
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• 2002

This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 $\mu\textrm{m}$, front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$, BSF thickness 5 $\mu\textrm{m}$, doping concentration 5${\times}$10$\^$19/ cm$\^$-3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %.

• 전자공학회논문지A
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• 제32A권3호
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• pp.143-151
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• 1995

The electrochemical impulse oscillations of the cathodic currents at the platinum group (Pt, Pd) electrode/(0.05M KHC$_{8}H_{4}O_{4}$) buffer solution interfaces have been studied using voltammetric, chronoamperometric, and electrochemical impedance methods. The periodic impulses of the cathodic currents are the activation controlled currents due to the hydrogen evolution reaction, and depend on the fractional surface coverage of the adsorbed hydrogen intermediate and potential. The oscillatory mechanism of the cathodic current impulses is connected with the unstable steady state of negative differential resistance. The widths and periods of the cathodic current impulses are 4ms or 5ms and 152.5ms or 305ms, respectively. The H$^{+}$ discharge reaction step is 38 or 61 times faster thatn the recombination reaction steps and the H$^{+}$ mass transport processes. The atom-atom recombination reaction step is twice faster thatn the atom-ion recombination reaction step. The two kinds of active sites corresponding to the atom-atom and atom-ion recombination reaction steps exist on the platinum group electrode surfaces.

• 대한수학회지
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• 제51권4호
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• pp.817-836
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• 2014

We develop a topological model of site-specific recombination that applies to substrates which are the connected sum of two torus links of the form T(2, n)#T(2, m). Then we use our model to prove that all knots and links that can be produced by site-specific recombination on such substrates are contained in one of two families, which we illustrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.47-48
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• 2005

The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of $5.29\times10^{-7}$ A/W.

• Transactions on Electrical and Electronic Materials
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• 제6권6호
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• pp.280-283
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• 2005

The moving photocarrier grating (MPG) technique for the determination of the carrier mobilities and the recombination lifetime of $\alpha$-Se:As films has been studied. The electron and hole drift mobility and the recombination lifetime of $\alpha$-Se films with arsenic (As) additions have been obtained from measurement of the short circuit current density $j_{sc}$ as a function of grating velocity and spatial period. The hole mobility decreases due to defect density of hole traps when x exceeds 0.003, whereas the hole mobility increases for the case of low As addition (x$\le$0.003). We have found an increase in hole drift mobility and recombination lifetime, especially when As with (x = 0.003) is added into the $\alpha$-Se film.

• 한국광학회지
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• 제18권1호
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• pp.24-30
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• 2007

3차원 영상 재생을 위한 집적결상법에서 기본영상의 재조합을 통한 재생영상의 깊이변환에 관하여 연구하였다. 렌즈 배열 또는 카메라 배열 등을 통하여 획득된 영상 배열을 적절한 조건 하에서 재조합하여 재생함으로써 재생영상의 깊이에 대해 도치(pseudoscopic) 영상 또는 정치(orthoscopic) 영상, 허상, 실상 뿐만 아니라 임의의 깊이로의 왜곡 없는 변환이 가능하다. 본 논문에서는 각 변환에 대한 재조합 조건을 이론적으로 유도하고 실험을 통하여 확인하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.187-191
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• 2004

In this work, we used the PCID simulator for simulation of solar cell and examined the effect of front-back surface recombination velocity, minority carrier diffusion length, junction depth and emitter sheet-resistance. As the effect of base thickness, the efficiency decreased by the increase in series resistance with the increase of the thickness and found decrease in efficiency by decrease of the current as the effect of the recombination. Also, as the effect of base resistivity, the efficiency increased somewhat with the decrease in resistivity, but when the resistivity exceeded certain value, the efficiency decreased as a increase in the recombination ratio. The optimum efficiency was obtained at the resistivity 0.5 $\Omega$-cm, and thickness $100\mu\textrm{m}$. We have successfully achieved 10.8% and 13.7% efficiency large area($103mm{\times}103mm$) mono-crystalline silicon solar cells without and with PECVD silicon nitride antireflection coating.