• Title/Summary/Keyword: recessed

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The Crystal Structure of a Sulfur Sorption Complex of the Dehydrated Partially $Co^{2+}$-Exchanged Zeolite A

  • 염영훈;송성환;김양
    • Bulletin of the Korean Chemical Society
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    • v.16 no.9
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    • pp.823-826
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    • 1995
  • The crystal structure of a sulfur sorption complex of the dehydrated partially Co2+ exchanged zeolite A (a=12.058(2) Å) has been determined by single-crystal X-ray techniques. The crystal structure was solved and refined in cubic space group Pm3m at 21(1) ℃. Ion Exchange with aqueous 0.05 M Co(NO3)2 was done by the static method. The crystal of Na4Co4-A was dehydrated at 380 ℃ and 2 × 10-6 Torr for 2 days, followed by exposure to about 100 Torr of sulfur at 330 ℃ for 72 h. Full matrix least-squares refinement converged to R1=0.084 and Rw=0.074 with 102 reflections for which I > 3σ(I). Crystallographic analysis shows that 2.8 Co2+ ions and 4 Na+ ions per unit cell occupy 6-ring sites on the threefold axes. 1.2 Co2+ ions occupy the 8-ring sites on fourfold axes. 2.8 Co2+ ions at Co(1) are recessed 0.66 Å into the large cavity and 4 Na+ ion at Na(1) are recessed 0.77 Å into the sodalite cavity from the (111) plane of O(3)'s. Approximately 16 sulfur atoms were sorbed per unit cell. Two S8 rings, each in a butterfly form, are found in the large cavity. The bond length between S and its adjacent S is 2.27(3) Å. The distance between 6-ring Co2+ ion and its adjacent sulfur is 2.53 (2) Å and that between 8-ring Co2+ ions and its adjacent sulfur is 2.72(9) Å. The angles of S-S'-S and S'-S-S'/ in octasulfur rings are 119.0(2)°and 113.0(2)°, respectively.

Chemistry and Crystallographic Studies of Metal Ion Exchanged Zeolite X. Ⅰ. The Crystal Structure of Fully Dehydrated and Fully $K^+$-Exchanged Zeolite X, $K_{92}$-X

  • 장세복;김양
    • Bulletin of the Korean Chemical Society
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    • v.16 no.6
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    • pp.539-542
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    • 1995
  • The crystal structure of K92-X (K92Al92Si100O384), a=25.128(1) Å, dehydrated at 360 ℃ and 2X 10-6 Torr, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd&bar{3} at 21(1) ℃. The structure was refined to the final error indices R1=0.044 and Rw=0.039 with 242 reflections for which I<3σ(I). In this structure, ninety-two K+ ions are located at the five different crystallographic sites. Sixteen K+ ions are located at the centers of the double six rings (site I; K(1)-O(3)=2.65(2) Å and O(3)-K(1)-O(3)=92.0(6)°). About twelve K+ ions lie at site I' in the sodalite cavity opposite double six rings (D6R's) and these K+ ions are recessed ca. 1.62 Å into the sodalite cavity from their O(3) plane (K(2)-O(3)=2.74(2) Å, O(3)-K(2)-O(3)=88.5(8)°). About thirty-two K+ ions are located at the site II in the supercage and these K+ ions are recessed ca. 1.20 Å into the supercage from their O(2) plane (K(3)-O(2)=2.64(2) Å, and O(2)-K(3)-O(2)=101(1)°). About twenty-two K+ ions lie at the site III in the supercage opposite 4-ring ladder and the remaining ten K+ ions lie at the site III' near the 4-ring ladder in the supercage (K(4)-O(4)=2.88(3) Å, O(4)-K(4)-O(4)=79.8(9)°, K(5)-O(4)=2.8(2) Å, and O(4)-K(5)-O(4)=68(5)°).

Supperession of Short Channel Effects in 0.1$\mu\textrm{m}$ nMOSFETs with ISRC Structure (짧은 채널 효과의 억제를 위한 ISRC (Inverted-Sidewall Recessed-Channel)구조를 갖는 0.1$\mu\textrm{m}$ nMOSFET의 특성)

  • 류정호;박병국;전국진;이종덕
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.8
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    • pp.35-40
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    • 1997
  • To suppress the short channel effects in nMOSFET with 0.1.mu.m channel length, we have fabricated and characterized the ISRC n MOSFET with several process condition. When the recess oxide thickness is 100nm and the channel dose for threshold voltge adjustment is 6*10$^{12}$ /c $m^{-2}$ , B $F_{2}$$^{+}$, the maximum transconductance at $V_{DS}$ =2.0V is 455mS/mm and the BIDL is kept within 67mV. By comparing the ISRC n MOSFET with the conventioanl SHDD (shallowly heavily dopped drain) nMOSFET, we verify the suppression of short channel effects ISRC structure.e.

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POD analysis of crosswind forces on a tall building with square and H-shaped cross sections

  • Cheng, L.;Lam, K.M.;Wong, S.Y.
    • Wind and Structures
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    • v.21 no.1
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    • pp.63-84
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    • 2015
  • The shape of a tall building has significant impact on wind force generation and wind-induced dynamic response. To study the effect of recessed cavities, wind excitations on a wind-tunnel model of an H-section tall building were compared with those on a square-section building model. Characteristics of the fluctuating wind pressures on the side faces of the two tall buildings and their role in the generation of crosswind forces on the buildings were investigated with the space-time statistical tool of proper orthogonal decomposition (POD). This paper also compares the use of different pressure data sets for POD analysis in situations where pressures on two different surfaces are responsible for the generation of a wind force. The first POD mode is found to dominate the generation of crosswind excitation on the buildings.

Tile Size Dependency of Ballistic Performance in Alumina (알루미나의 시편크기가 방탄거동에 미치는 영향)

  • ;S.J. Bless
    • Journal of the Korean Ceramic Society
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    • v.32 no.3
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    • pp.366-370
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    • 1995
  • The ballistic efficiency of alumina tiles with various sizes, shapes, and target configurations was measured by the thick backing plate technique. The ballistic efficiency of square tiles roughly 8 mm thick struck by 12.7mm diameter bullets rapidly increased with tile size up to about 100mm, then tended to saturate. Circular shape tiles had lower ballistic efficiencies than those of square shape tiles for the same width and thickness. Small tiles (50mm) that were recessed in aluminum wells had a significantly higher ballistic efficiency than tiles placed on a flat surface. However, the difference in the ballistic efficiency between the two target configurtions became small at larger tile sizes. All the results could be explained by the effect of reflected waves at edges and the propagation of resulting cracks on the penetration process.

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A Study on the Electrical and Thermal Safety of System LED Lighting (시스템 LED 조명의 전기적·열적 안전성 확보 방안에 대한 연구)

  • Kim, Yeong Woo;Kim, Chung Hyeok;Choi, Woon Shik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.5
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    • pp.418-426
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    • 2020
  • This study tested the electrical, structural, and thermal safety of LED lighting products, available on the market. Five recessed LED systems, 20 W each, and five fixed LED systems, 25 W each, were selected. Dielectric strength tests, live part electric shock protection tests, and thermal tests were conducted on the LEDs. These were key tests for user safety, according to the specification of the safety criteria for electric products, KC 60598-1, South Korea. In addition, the wiring temperature of UL1007, 60227 IEC 08, and UTP cables, was measured. The results of the study gave an in-depth examination of the safety of LED lighting systems for users.

Radiation Hardness Evaluation of GaN-based Transistors by Particle-beam Irradiation (방사선빔 조사를 이용한 질화갈륨 기반 트랜지스터의 내방사선 특성 연구)

  • Keum, Dongmin;Kim, Hyungtak
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.9
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    • pp.1351-1358
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    • 2017
  • In this work, we investigated radiation hardness of GaN-based transistors which are strong candidates for next-generation power electronics. Field effect transistors with three types of gate structures including metal Schottky gate, recessed gate, and p-AlGaN layer gate were fabricated on AlGaN/GaN heterostructure on Si substrate. The devices were irradiated with energetic protons and alpha-particles. The irradiated transistors exhibited the reduction of on-current and the shift of threshold voltage which were attributed to displacement damage by incident energetic particles at high fluence. However, FET operation was still maintained and leakage characteristics were not degraded, suggesting that GaN-based FETs possess high potential for radiation-hardened electronics.

The Design of a K-Band 4$\times$4 Microstrip Patch Array Antennas with High Directitvity (고지향성 구현을 갖는 K-밴드 4$\times$4 마이크로스트립 패치 어레이 안테나의 설계)

  • Lee, Ha-Young;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.1
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    • pp.161-166
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    • 2007
  • In this paper, two 4$\times$4 rectangular patch array antennas operating at 20 GHz are implemented for the satellite communication. The sixteen patch antennas and microstrip feeding line are printed on a single-layered substrate. The design goal is to achieve high directivity and gain by optimizing design parameters through permutations in element spacing. The spacing between the array elements is chosen to be 0.736$\lambda$. Numerical simulation results indicate that the HPBW(Half-Power Beam Width) of the 4$\times$4 patch array antenna is 18.78 degrees in the E-plane and 18.48 degrees in the H-plane with a gain of 17.18 dBi. Numerical simulations of a 4$\times$4 recessed patch array antenna yield a HPBW of 18.71 degrees in the E-plane and 17.82 degrees in the H-plane with a gain of 19.43 dBi.

A novel in-situ vacuu encapsulted lateral field emitter triode (자체적으로 진공을 갖는 수평형 전계 방출 트라이오드)

  • 임무섭;박철민;한민구;최연익
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.12
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    • pp.65-71
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    • 1996
  • A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

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Studies on the Processing of Herbal Medicines(IV) -The changes of a color tone of processed and unprocessed herbal medicines by Korean standard color table- (한약재 수치에 관한 연구(IV) -수치 전.후 외부 한약재의 표준 색도표에 의한 색상변화-)

  • Kim, Hyun-Jung;Kim, Jin-Sook
    • Korean Journal of Oriental Medicine
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    • v.8 no.2 s.9
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    • pp.121-124
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    • 2002
  • To obtain a specific pharmacological effect, herbal medicines are i)recessed based on the principle of traditional korean medicines. However, the problem in processing is the variety of methods, technics, and drug quality. In order to establish the base of standardization of processing methods, some herbal medicines were processed and studied the change of a color tone before and after processing.

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