• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.65-70
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• 2004

Read out signal and temperature distribution of magnetic amplifying magnetooptical disk were studied. Temperature distribution of recording layer and adjacent layers were calculated when the disk was at rest. Mark size, length and location were simulated from a chain of recording beam pulses. In addition, signal amplitude depending on the shape of the marks, readout signals from the recording layer and amplified marks of the readout layer, were simulated. Simplified thermal conduction model was used to calculate the temperature distribution of recording and adjacent layers as a function of time as well as to calculate the mark size, length and location. Readout signal was calculated by the convolution of the disk reflectivity and the Gaussian beam intensity. Readout signal from the mark in the readout layer amplified to the size of the laser beam fumed out to be twice as large as the signal from the crescent shaped mark in the recording layer.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.73-81
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• 2014

Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.48-52
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• 2005

The research topic of super-RENS technology is shifting from the signal intensity (CNR; Carrier to Noise Ratio) to the signal uniformity (Jitter or bER). To achieve an uniform signal characteristics, it is important to reduce signal fluctuation in a super-RENS disc. In this study, we investigated the relation between signal fluctuation and low frequency noise (LFN), and analyzed LFN increase in recording and readout processes. It was found that signal fluctuation had a close relationship with the LFN. Also, it was found that the recorded mark shape such a bubble type and high readout power increased the LFN in recording and readout process of a super-RENS disc. So, using non-bubble type recording material and low super-resolution readout material, we markedly improved the LFN in a super-RENS disc.

• Transactions of the Society of Information Storage Systems
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• v.3 no.3
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• pp.113-117
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• 2007

재생층이 상변화물질로 이루어진 초해상 광디스크에 있어서, 기록 전과 후에 thermal curing 을 실시하여 신호품질과 재생안정성이 크게 향상되었다. Pre-curing으로 수천 회 이하에서 나타나는 short-term stability가 향상되었고, post-curing 한 후 mid-term stability 가 향상되었다. 그리고, pre- and post-curing 후 noise level 은 전반적으로 $1{\sim}2dB$가 낮아졌고, CNR은 $2{\sim}3dB$, jitter 는 $2{\sim}3%$ 가 향상되었다.

• Transactions of the Society of Information Storage Systems
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• v.3 no.3
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• pp.123-125
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• 2007

We report the readout stability improvement results of super-resolution near field structure (Super-RENS) writeonce read-many (WORM) disk at a blue laser optical system. (Laser wavelength 405nm, numerical aperture 0.85) By using diffusion barrier structure (GeSbTe sandwiched by GeN) and high transition temperature recording material ($BaTiO_3$), material diffusion of phase change layer and recording mark degradation were greatly improved during high power (Pr=2.0mW) readout process up to $1{\times}10^5$ times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.85-88
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• 1998

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator(e.g., digital clocks, meter readout) and display systems(e.g., instrument panels, TV display), the application being determined by the light -output capability and size availability(cost) of the particular device. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. Also in order to maximize even surface emission, various sieving process are introduced. Very similar phosphor particle size is selected. Luminance by various wave intensity is also investigated. 150cd/m$^2$ luminance are investigated in stable voltage and frequency.

• Transactions of the Society of Information Storage Systems
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• v.4 no.1
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• pp.1-5
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• 2008

Super-resolution near-field structure (super-RENS) technology and solid immersion lens (SIL) based near-field (NF) technology have been expected as promising approaches to increase data capacity or areal density of optical disc. Super-RENS technology has been studied until now using mainly numerical aperture (NA) of 0.85 far-field optical system and possibility of tangential data density increment have been presented. NF technology has been studied with NA over 1 and presented demonstration of removable performance. To achieve much higher density, approach to increase NA of super-RENS by NF technology (Near-Field Super-Resolution, NFSR) can be a candidate and we think this technology would be advantageous compared to wavelength reduction or much higher NA increment of NF technology or much smaller effective optical spot size reduction of far-field super-resolution technology. In this paper we present readout result of ROM media having monotone pits using NF optical system with wavelength of 405nm and NA of 1.84 surface type SIL. GeSbTe material was used for super resolution active layer and pit length is 37.5nm which is shorter than resolution limit 55nm. We present the feasibility of NFSR technology by confirming the CNR threshold according to readout power (Pr) and CNR 33dB over threshold Pr.

• Transactions of the Society of Information Storage Systems
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• v.3 no.2
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• pp.54-58
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• 2007

Using metal/Si materials as a recording layer, we have achieved good results for a SR disc (super resolution disc). Mainly by controlling metal composition and the ratio of metal to Si of recording layer, signal qualities were greatly enhanced. At the mark length of 75nm, the best CNR (Carrier to Noise Ratio) was about 45dB. Write power was reduced down to about 6.5mW. LFN (Low Frequency Noise) could also be reduced down to 14dB. Single tone pattern jitters for every mark whose length is from 2T through 8T were achieved to be below 10%. The readout signal was stable sustaining CNR>40dB during about 15,000 times reading. The so-called "3T-problem" could be avoided.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.817-820
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• 2002

Amorphous selenium based flat panel detectors convert incident x-ray to electric signal directly. Flat panel detectors gain more interest real time medical x-ray imaging. TFT array and electric readout circuits are used in this paper offered by LG.Philips.LCD. Detector is based on a $1536{\times}1280$ array of a-Si TFT pixels. X-ray conversion layer(a-Se) is deposited upper TFT array with a $400{\mu}m$ by thermal deposition technology. Thickness uniformity of this layer is made of thickness control system technology$({\leq}5%)$. Each $139{\mu}m{\times}139{\mu}m$ pixel is made of thin film transistor technology, a storage capacitor and collecting electrode having geometrical fill factor of 86%. This system show dynamic performance. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.780-783
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• 2004

The two-dimensional modeling of the non-stationary thermal state and voltage responsivity of the sensitive elements usually used in solid-state pyroelectric focal plane arrays are presented. Temperature distributions under periodical thermal excitation and the response of the thermal imaging device, which is composed of the pyroelectric sensitive elements mounted on a single silicon substrate, are numerically calculated. The sensitive element consists of a covering metal layer, infrared polymer absorber, front metal contact, sensitive pyroelectric element, the interconnecting column and the bulk silicon readout. The results of the numerical modeling show that the thermal crosstalk between sensitive elements to be critical especially at low frequency (f < 10Hz) of periodically modulated light. It is also shown that the use of our models gives the possibility to improve the design, operating regimes and sensitivity of the device.