• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.341-346
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• 2010

In this paper, anti-reflection coating was investigated for decreasing the reflection in visible range of 400~650 [nm] through four staked layers of $Si_xO_y$ and $Si_xN_y$ thin films prepared by reactive sputtering method. Si single crystal of 6 [inch] diameter was used as a sputtering target. Ar and $O_2$ gases were used as sputtering gases for reactive sputtering for the $Si_xO_y$ thin film, and Ar and $N_2$ gases were used for reactive sputtering for the $Si_xN_y$ thin film. DC pulse power of 1900 [W] was used for the reactive sputtering. Refractive index and deposition rate were 1.50 and 2.3 [nm/sec] for the $Si_xO_y$, and 1.94 and 1.8 [nm/sec] for the $Si_xN_y$ thin film, respectively. Considering the simulation of the four layer anti-reflection coating structure with the above mentioned films, the $Si_xO_y-Si_xN_y$ stacked four-layer structure was prepared. The reflection measurement result for that structure showed that a "W" shaped anti-reflection was obtained successfully with a reflection of 1.7 [%] at 550 [nm] region and a reflection of 1 [%] at 400~650 [nm] range.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.688-694
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• 1999

Ti-6Al-4V-N films have been grown onto glass substrates by dc reactive magnetron sputtering from a Ti-6Al-4V-N alloy target at different nitrogen partial pressure, input powers and sputtering times. The influence of various sputtering conditions on structural properties of Ti-6Al-4V-N films was investigated by measuring their X-ray diffraction. The quaternary Ti-6Al-4V-N film is crystallizing in a face centered cubic TiN structure, the lattice parameter is smaller than the TiN parameter as titanium atoms of the TiN lattice are replaced by aluminum and vanadium atoms. The films show the (111) preferred orientation and the (111) peak intensity decreases as the nitrogen partial pressure is increased, but the intensity increases as the sputtering time is increased. The deposition rate and the grain size are alto related with the variation of various sputtering conditions.

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.17-21
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• 2004

Aluminum nitride(AlN) thin films were deposited on silicon substrate by reactive RF magnetron sputtering without substrate heating. We investigated the dependence of some properties for AlN thin film on sputtering conditions such as working pressure, $N_2$ concentration and RF power. XRD, Ellipsometer and AES has been measured to find out structural properties and preferred orientation of AlN thin films. Deposition rate of AlN thin film was increased with an increase of RF power and decreased with an increase of $N_2$ concentration. AES in-depth measurements showed that stoichiometry of Aluminium and Nitrogen elements were not affected by $N_2$ concentration. It has shown that low working pressure, low $N_2$ concentration and high RF power should be maintained to deposit AlN thin film with a high degree of (0002) preferred orientation.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.27-32
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• 2004

High temperature superconducting coated conductor has a structure of /< superconducting layer>//. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is CeO$_2$(cap layer)/YSZ(diffusion barrier layer)/CeO$_2$(seed layer). Evaporation technique is used for the CeO$_2$ layer and DC reactive sputtering technique is used for the YSZ layer, A chamber was set up specially for DC reactive sputtering, Detailed features are as following. A separator divided the chamber into two halves a sputtering chamber and a reaction chamber. The argon gas for sputtering target elements flows out of the cap of sputtering gun, and water vapor for reaction with depositing species spouts near the substrate. Turbo pump is connected with reaction chamber. High speed deposition of YSZ film could be achieved in the chamber. Detailed deposition conditions (temperature and partial pressure of reaction gas) were investigated for the rapid growth of high quality YSZ film.

• Journal of the Korean institute of surface engineering
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• v.45 no.5
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.153-153
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.49.2-49.2
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• 2010

Copper oxide films have been deposited on silicon substrates by direct current magnetron sputtering of Cu in O2 / Ar gas mixtures. The target oxidation occurring as a result of either adsorption or ion-plating of reactive gases to the target has a direct effect on the discharge current and the resulting composition of the deposited films. The kinetic model which relates the target oxidation to the discharge current was proposed, showing the one-to-one relationship between discharge current characteristics and film stoichiometry of the deposited films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.527-534
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• 1998

Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$ｓ, and 1.912eV, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.52-53
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• 2005

$Y_2O_3$ film was directly deposited on Ni-3at%W substrate using DC reactive sputtering technique. Metallic yttrium was used for DC sputtering target and water vapor was used for oxidizing the deposited metallic Yttrium atoms on the substrate. The window of the water vapor turned out to be broad. The minimum partial pressure of water vapor was determined by sufficient oxidation of the $Y_2O_3$ film, and the maximum partial pressure of water vapor was determined by the non-oxidation of the target surface. As the sputtering power was increased, The deposition rate increased without narrowing the window. The fabricated $Y_2O_3$ films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the $Y_2O_3$ buffered Ni-3at%W substrate showed $T_c$, $I_c$ (77 K, self field), and $J_c$ (77 K, self field) of 89 K, 64 A/cm and 1.l $MA/cm^2$, respectively.