• Textile Coloration and Finishing
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• v.29 no.4
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• pp.195-201
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• 2017

To study the effect of oxyfluorination on water dispersion of phthalocyanine blue(C.I. pigment blue 15:3), the pigment was oxyfluorinated using various oxygen to fluorine ratio of the reactant gas. After the oxyfluorination of the phthalocyanine blue pigment, no significant change in FT-IR spectra was observed, whereas XPS spectra showed the introduction of oxygen and fluorine containing functional groups. This suggests that the oxyfluorination of the pigment only occurred on the surface of the pigment particle and resulted in no significant change in UV-Vis spectra of the pigment. However, the oxyflurinated pigments showed improved water dispersion, compared to the non-treated pigment. Especially, when the oxygen to fluorine ratio was 47:3, the water dispersion of the oxyfluorinated pigments significantly increased, compared to the non-treated pigments. This suggests that the oxyfluorination of the phthalocyanine blue pigment has a potential to be used as a water dispersion improving method.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• Korean Chemical Engineering Research
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• v.53 no.6
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• pp.818-823
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• 2015

In this study, FT reaction in a microchannel was simulated using computational fluid dynamics(CFD), and sensitivity analyses conducted to see effects of channel geometry variables, namely, process channel width, height, gap between process channel and cooling channel, and gap between process channels on the channel temperature profile. Microchannel reactor considered in the study is composed of five reaction channels with height and width ranging from 0.5 mm to 5.0 mm. Cooling surfaces is assumed to be in isothermal condition to account for the heat exchange between the surface and process channels. A gas mixture of $H_2$ and CO($H_2/CO$ molar ratio = 2) is used as a reactant and operating conditions are the following: GHSV(gas hourly space velocity) = $10000h^{-1}$, pressure = 20 bar, and temperature = 483 K. From the simulation study, it was confirmed that heat removal in an FT microchannel reactor is affected channel geometry variables. Of the channel geometry variables considered, channel height and width have significant effect on the channel temperature profile. However, gap between cooling surface and process channel, and gap between process channels have little effect. Maximum temperature in the reaction channel was found to be proportional to channel height, and not affected by the width over a particular channel width size. Therefore, microchannels with smaller channel height(about less than 2 mm) and bigger channel width (about more than 4 mm), can be attractive design for better heat removal and higher production.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Transactions of the KSME C: Technology and Education
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• v.3 no.4
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• pp.285-290
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• 2015

Oxy gasification was performed for the production of high quality syngas from the waste. $CO_2$ was used as reactant with $O_2$ for $CO_2$ gasification and greenhouse gas reduction. Therefore, gasification was performed at high temperature of $1000-1400^{\circ}C$. RPF was gasified in the thermobalance and 0.5 ton/day pilot plant gasifier. Weight variation with temperature and CO production by Boudouard reaction were studied for $CO_2$ gasification of RPF in thermobalance reactor. Syngas of high $H_2$ concentration was produced from oxy gasification in 0.5 ton/day pilot system, which showed appropriate $H_2$/CO ratio for the production of transport fuel and chemical products.

• Bulletin of the Korean Chemical Society
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• v.11 no.5
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• pp.391-395
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• 1990

The kinetics of thermnal cis-trans isomerization reaction of 1-bromopropene(1-BP) was studied at temperatures from 620.8 to 753.15 K over the pressure range 0.17-50.3 Torr. Both the inhibition effect by cyclohexene or propene and the catalytic effect by HBr showed a radical process as the main mechanism of the isomerization. In the suppression of the radical process by the inhibitors, the molecular process also contributed to overall reaction rate. The reactions demonstrated the first order kinetics under both uninhibited and inhibited conditions and could be represented by the expressions (R = 1.987 cal/mol/K) $k_{un}/s^{-1} = (3.45{\pm}1.50){\times}10^{11}$exp$[(- 48100{\pm}2000)/RT]\;k_{ink}/s^{-1} = (2.98{\pm}1.40){\times}10^{12}$exp$[(- 55800{\pm}1800)/RT]$> where $k_{un}$ is the observed rate constant of cis-1-bromopropene(1-B$P_c$) to trans-1-bromopropene(1-B$P_t$) under uninhibited condition at initial pressure of 50 Torr and $k_{ink}$ is the rate constant under maximal inhibition by cyclohexene. The ratio of rate constants for bromine atom elimination from the allylic hydrogen of reactant(1-BP) and from the inhibitors, propene and cyclohexene, were measured from the observed rates of the uninhibited and inhibited reactions. The inhibition efficiencies of cyclohexene and propene were compared kinetically from the rate constants and shown to give good agreement with the previous results reported from other alkyl bromide pyrolyses.

• Journal of the Korean Ceramic Society
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• v.41 no.7
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• pp.518-527
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• 2004

In this study, SiC whiskers were grown in porous alumina substrate in order to enhance the filtering efficiency, performance, and durability by controlling pore morphology. This experiment was performed by Chemical Vapor Infiltration (CVI) in order to obtain the whiskers on the inside of pores as well as on the surface of porous the A1$_2$O$_3$ substrate. The deposition behavior was changed remarkably with the deposition position, temperature, and input gas ratio. First, the mean diameter of whisker was decreased as the position of observation moved into the inside of substrate due to the reactant gas depletion effect'. Second, the deposition temperature caused the changes of the deposition type such as debris, whiskers and films and the change in morphology affect the various properties. When SiC films were deposited. the gas permeability and the specific surface area decreased. However, the whisker showed the opposite result. The whiskers increase not only the specific surface area and minimizing pressure drop but also mechanical strength. Therefore it is expected that the porous alumina body which deposited the SiC whisker is the promising material for the filter trapping the particles.