• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.681-688
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• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• Journal of the Korean institute of surface engineering
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• v.44 no.2
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• pp.60-67
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• 2011

Ternary B-C-N coatings were deposited on Si(100) wafer substrate from $B_4C$ target by RF magnetron sputtering technique in $Ar+N_2+CH_4$ gas mixture. In this work, the effect of reactant gas ratio, $CH_4/(N_2+CH_4)$ on the composition, kinds and amounts of bonding states comprising B-C-N coatings were investigated using two different bias power sources of continuous and unipolar DCs. In addition, the tribological properties of coatings were studied with the composition and bonding state of coating. It was found that the substrate bias power had an effect on chemical composition, and all of the obtained coatings were nearly amorphous. Main bonding states of coatings were revealed from FTIR analyses to be h-BN, C-C, C-N, and B-C. The amount of C-C bonging mainly increased with increase of the reactant gas ratio. From our studies, both C-C and h-BN bonding states improved the tribological properties but B-C one was found to be harmful on those. The best coating from tribological points of view was found to be $BC_{1.9}N_{2.3}$ composition.

• Journal of Korean Society for Atmospheric Environment
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• v.25 no.5
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• pp.402-409
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• 2009

Sodium bicarbonate ($NaHCO_3$) was used as a reactant for the removal of acid gases from a waste incinerator. The removal efficiencies of HCl and $SO_x$ were tested with a reactant mixing apparatus and a distributor installed at the bag filter inlet. It was shown that the stoichiometric ratio of $NaHCO_3$ to the acid gases which allows a removal of over 90% for both HCl and $SO_2$ was about 1.2. When a reactant mixing apparatus was installed on the duct, the removal efficiencies of HCl and $SO_2$ at the end of the duct were increased by approximately 1.5 and 3 times respectively, compared to when the apparatus was not installed. At the end of the bag filter, the removal efficiencies of the both were as high as 98% with a stoichiometric ratio of 1.35. Installing a reactant mixing apparatus on the duct and a distributor at the entrance of the bag filter and using $NaHCO_3$ as a reactant helped overcome the problem of low removal efficiencies of acid gases by dry scrubbing.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.11b
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• pp.506-511
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• 1996

Research on the dry etching of UO$_2$ by using fluorine containing gas plasma is carried out for DUPIC (Direct Use of spent PWR fuel In CANDU) process which is taken into consideration for potential future fuel cycle in Korea. CF$_4$/O$_2$ gas mixture is chosen for the reactant gas and the etching rates of UO$_2$ by the gas plasma are investigated as functions of substrate temperature, plasma gas pressure, CF$_4$/O$_2$ ratio, and plasma power, It is tentatively found that the etching rate can reach 1000 monolayers/min. and the optimum CF$_4$/O$_2$ ratio is around 4:1.

• Journal of Microbiology and Biotechnology
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• v.19 no.12
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• pp.1665-1671
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• 2009

Anaerobic digestion sludge was cultivated in an electrochemical bioreactor (ECB) to enrich the hydrogenotrophic methanogens. A modified graphite felt cathode with neutral red (NR-cathode) was charged with electrochemical reducing power generated from a solar cell. The methane and carbon dioxide collected in a Teflon bag from the ECB were more than 80 ml/l of reactant/day and less than 20 ml/l of reactant/day, respectively, whereas the methane and carbon dioxide collected from a conventional bioreactor (CB) was around 40 ml/l of reactant/day, respectively. Moreover, the maximal volume ratios of methane to carbon dioxide (M/C ratio) collected in the Teflon bag from the ECB and CB were 7 and 1, respectively. The most predominant methanogens isolated from the CB on the $20^{th}$, $80^{th}$, and $150^{th}$ days of incubation were hydrogenotrophs. The methanogenic diversity analyzed by temperature gradient gel electrophoresis (TGGE) of the 16S rDNA variable region was higher in the ECB than in the CB. The DNA extracted from the TGGE bands was more than 95% homologous with hydrogenotrophic methanogens in the ECB, but was an aceticlastic methanogen in the CB. In conclusion, the ECB was demonstrated as a useful system for enriching hydrogenotrophic methanogens and increasing the M/C ratio of the gas product.

• Transactions of the Korean hydrogen and new energy society
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• v.23 no.1
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• pp.73-82
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• 2012

A 2-dimensional heterogeneous reactor model was developed and simulated for a tube reactor of packed bed where the steam-$CO_2$ combined reforming reaction of natural gas proceeded to produce synthesis gas. Under the reactor feeding rate, 45 $Nm^3$/h, of the reactant gas stream, the 2-dimensional heterogeneous reactor model showed the similar results to those from the ASPEN simulator although there were some discrepancies between the two in the temperature and the $H_2$/CO ratio of the reformed gas at the reactor exit. The calculated enthalpy difference between the reformed gas at the reactor exit and the reactant gas fed to the reactor was closely correspondent to the total amount of heat transferred to the reactor interior from the furnace. This supports that the 2-dimensional heterogeneous reactor model was reasonably established and the numerical solution was properly obtained.

• Journal of Climate Change Research
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• v.7 no.3
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• pp.231-236
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• 2016

Electrocatalytic reduction can produce useful chemicals and fuels such as carbon monoxide, methane, formate, aldehydes, and alcohols using carbon dioxide, the green house gas, as a reactant through the supply of electrical energy. In this study, tin-lead (Sn-Pb) alloy electrodes are fabricated by electrodeposition on a carbon paper with different alloy composition and used as cathode for electrocatalytic reduction of carbon dioxide into formate in an aqueous system. The prepared electrodes are measured by Faradaic efficiency and partial current density for formate production. Electrocatalytic reduction experiments are carried out at -1.8 V (vs. Ag/AgCl) using H-type cell under ambient temperature and pressure and the gas and liquid products are analyzed by gas chromatograph and liquid chromatograph, respectively. As results, the Sn-Pb electrodes show higher Faradaic efficiency and partial current density than the single metal electrode. The Sn-Pb alloy electrode which have Sn:Pb molar ratio=2:1, shows the highest Faradaic efficiency of 88.7%.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.619-626
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• 2004

Pulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and $H_2$ reactant at the deposition temperatures from 50 to $100^{\circ}C$. The Cu thickness increased proportionally to the number of cycles, and the growth rate was in the range from 3.5 to $8.2{\AA}/cycle$, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for films thicker than 100 nm. In addition about a $90\%$ step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. $H_2$, introduced as a reactant gas, can play an active role in achieving highly conformal coating, with increased grain sizes.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.601-608
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• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.