• The Korean Journal of Food And Nutrition
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• v.25 no.3
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• pp.538-545
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• 2012

The objective of this work was to study the effect of far infrared ray-vacuum drying having reflection and dispersion functions(RD-FRVD) and hot air drying(HAD) on the quality changes of dried vegetable flakes. HAD was regarded as a control. Browning degrees, color value, titratable acidity and pH value were measured as chemical evaluations. Rehydration and electron micrographs were investigated as physical evaluation. Microbial cells were counted. The color value and browning degrees were increased in both RD-FRVE and HAD. In case of degree of those changes, RD-FRVD made less changes than HAD. Especially, green bean sprout had no differences in color value and browning degrees between raw material and dried-rehydrated material. There were no significance differences in titratable acidity and pH value between raw material and dried-rehydrated material. The total microbial counts were gradually reduced in RD-FRVD. The rehydration rates of dried vegetable flakes were typically increased in RD-FRVD. Also, these results were investigated electron micrographs evaluation. Therefore, these results showed that the quality of dried-rehydrated vegetable flakes was typically enhanced by using RD-FRVD.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.52-59
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• 2023

The effects of dielectric curing temperature and temperature/humidity treatment conditions on the interfacial adhesion energies between Ti diffusion barrier/polybenzoxazole (PBO) dielectric layers were systematically investigated for Cu redistribution layer applications of fan-out wafer level package. The initial interfacial adhesion energies were 16.63, 25.95, 16.58 J/m² for PBO curing temperatures at 175, 200, and 225 ℃, respectively. X-ray photoelectron spectroscopy analysis showed that there exists a good correlation between the interfacial adhesion energy and the C-O peak area fractions at PBO delaminated surfaces. And the interfacial adhesion energies of samples cured at 200 ℃ decreased to 3.99 J/m² after 500 h at 85 ℃/85 % relative humidity, possibly due to the weak boundary layer formation inside PBO near Ti/PBO interface.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.96-109
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• 1997

In order to simulate the corrosion behavior of Zr-4 alloy in pressurized water reactors it was implanted (or bombarded) with 190ke V $Zr^+\; and \;Ar^+$ ions at liquid nitrogen temperature and room temperature respectively up to a dose of $5times10^{15} \sim 8\times10^{16} \textrm{ions/cm}^2$ The oxidation behavior and electrochemical vehavior were studied on implanted and unimplanted samples. The oxidation kinetics of the experimental samples were measured in pure oxygen at 923K and 133.3Pa. The corrosion parameters were measured by anodic polarization methods using a princeton Applied Research Model 350 corrosion measurement system. Auger Electron Spectroscopy (AES) and X-ray Photoelectric Spectroscopy (XPS) were employed to investigate the distribution and the ion valence of oxygen and zirconium ions inside the oxide films before and after implantation. it was found tat: 1) the $Zr^+$ ion implantation (or bombardment) enhanced the oxidation of Zircaloy-4 and resulted in that the oxidation weight gain of the samples at a dose of $8times10^{16}\textrm{ions/cm}^2$ was 4 times greater than that of the unimplantation ones;2) the valence of zirconium ion in the oxide films was classified as $Zr^0,Zr^+,Zr^{2+},Zr^{3+}\; and \;Zr^{4+}$ and the higher vlence of zirconium ion increased after the bombardment ; 3) the anodic passivation current density is about 2 ~ 3 times that of the unimplanted samples; 4) the implantation damage function of the effect of ion implantation on corrosion resistance of Zr-4 alloy was established.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1697-1702
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• 2014

A novel complex [$Zn(phen)(o-AB)_2$] [phen: 1,10-phenanthroline o-AB: o-aminobenzoic acid] was synthesized and characterized by elemental analysis and X-ray diffraction single-crystal analysis. The crystal crystallizes in monoclinic, space group P2(1)/c with $a=7.6397(6){\AA}$, $b=16.8761(18){\AA}$, $c=17.7713(19){\AA}$, ${\alpha}=90^{\circ}$, ${\beta}=98.9570(10)^{\circ}$, ${\gamma}=90^{\circ}$, $V=2.2633(4)nm^3$, Z = 4, F(000) = 1064, S = 1.058, $Dc=1.520g{\cdot}cm^{-3}$, $R_1=0.0412$, $wR_2=0.0948$, ${\mu}=1.128mm^{-1}$. The Zn(II) is six coordinated by two nitrogen and four oxygen atoms from the 1,10-phenanthroline and o-aminobenzoic acid to furnish a distorted octahedron geometry. The complex exhibits intense fluorescence at room temperature. Theoretical studies of the title complex were carried out by density functional theory (DFT) B3LYP method. CCDC: 898291.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3749-3754
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• 2013

Two 3D isomorphous and isostructural complexes, namely, $[Zn(BDOA)(bpy)(H_2O)_2]_n$ (1) and $[Cd(BDOA)-(bpy)(H_2O)_2]_n$ (2); (BDOA = Benzene-1,4-dioxyacetic acid, bpy = 4,4'-bipyridine) were synthesized under hydrothermal conditions and characterized by means of elemental analyses, thermogravimetric (TG), infrared spectrometry, and single crystal X-ray diffraction. Complexes 1 and 2 crystallize in the triclinic system, space group P-1 and each metal ion in the complexes are six-coordinated with the same coordination environment. In the as-synthesized complexes, $BDOA^{2-}$ anions link central metal ions to form a 1D zigzag chain $[-BDOA^{2-}-Zn(Cd)-BDOA^{2-}-Zn(Cd)-]_{\infty}$, whereas bpy pillars connect metal ions to generate a 1D linear chain $[-bpy-Zn(Cd)-bpy-Zn(Cd)-]_{\infty}$. Both infinite chains are interweaved into 2D grid-like layers which are further constructed into a 3D open framework, where hydrogen bonds play as the bridges between the adjacent 2D layers. Luminescent properties of complex 1 showed selectivity for $Hg^{2+}$ ion.

• Bulletin of the Korean Chemical Society
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• v.35 no.12
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• pp.3495-3501
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• 2014

A novel crystal, the mono-protonated metformin acetate (1), was obtained and characterized by elemental analysis, IR spectroscopy and X-ray crystallography. It was found that one of the imino group in the metformin cation was protonated along with the proton transfer from the secondary amino group to the other imino group. Its crystal structure was then compared with the previously reported diprotonated metformin oxalate (2). The difference between them is that the mono-protonated metformin cations can be linked by hydrogen bonding to form dimers while the diprotonated metformin cations cannot. Both of them are stabilized by intermolecular hydrogen bonds to assemble a 3-D supermolecular structure. The four potential tautomer of the mono-protonated metformin cation (tautomers 1a, 1b, 1c and 1d) were optimized and their single point energies were calculated by Density Functional Theory (DFT) B3LYP method based on the Polarized Continuum Model (PCM) in water, which shows that the most likely existed tautomer in human cells is the same in the crystal structure. Based on the optimized structure, their Wiberg bond orders, Natural Population Analysis (NPA) atomic charges, molecular electrostatic potential (MEP) maps were calculated to analyze their electronic structures, which were then compared with the corresponding values of the diprotonated metformin cation (cation 2) and the neutral metformin (compound 3). Finally, the possible tautomeric mechanism of the mono-protonated metformin cation was discussed based on the observed phenomena.

• Asian Pacific Journal of Cancer Prevention
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• v.14 no.10
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• pp.5957-5960
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• 2013

Background: Gliomas are the most common type of primary brain tumor in adults, and the X-ray repair complementing group 1 gene (XRCC1) is an important candidate gene influencing its risk. The objective of this study was to detect the influence of XRCC1 genetic polymorphisms on glioma risk. Materials and Methods: A total of 629 glioma patients and 641 cancer-free subjects were enrolled in this case-control study. The genotypes of the c.1471G>A genetic polymorphism were determined by created restriction site-polymerase chain reaction (CRS-PCR) and DNA sequencing methods. The influence of the XRCC1 genetic polymorphism on glioma risk was evaluated by association analysis. Results: Our data indicated that the alleles/genotype of this genetic variant was statistically associated with glioma risk. The AA genotype was statistically associated with the increased risk of glioma compared to the GG wild genotype (odds ratios (OR) = 1.89, 95% CI 1.25-2.87, P = 0.003). The allele-A may contribute to increased the susceptibility to glioma (OR = 1.23, 95% CI 1.04-1.46, P = 0.017). Conclusions: These preliminary findings indicate that the c.1471G>A genetic polymorphism of XRCC1 has the potential to influence glioma susceptibility, and might be used as molecular marker for assessing glioma risk.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.158-158
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• 2011

$Cu(In_xGa_{1-x})Se_2$ (CIGS) thin film solar cell is one of the most promising solar cells in photovoltaic devices. CIGS has a direct band gap which varied from 1.0 to 1.26 eV, depending on the Ga to In ratio. Also, CIGS has been studying for an absorber in thin film solar cells due to their highest absorption coefficient which is $1{\times}10^5cm^{-1}$ and good stability for deposition process at high temperature of $450{\sim}590^{\circ}C$. Currently, the highest efficiency of CIGS thin film solar cell is approximately 20.3%, which is closely approaching to the efficiency of poly-silicon solar cell. The deposition technique is one of the most important points in preparing CIGS thin film solar cells. Among the various deposition techniques, the sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have been prepared by rf magnetron sputtering method using a single target. The optical and structural properties of CIGS films are generally dependent on deposition parameters. Therefore, we will explore the influence of deposition power on the properties of CIGS films and the films will be deposited by rf magnetron sputtering using CIGS single target on Mo coated soda lime glass at $500^{\circ}C$. The thickness of CIGS films will be measured by Tencor-P1 profiler. The optical properties will be measured by UV-visible spectroscopy. The crystal structure will be analyzed using X-ray diffraction (XRD). Finally the optimal deposition conditions for CIGS thin films will be developed.

• Applied Microscopy
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• v.46 no.1
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• pp.32-36
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• 2016

The Cu-based bulk glassy alloys in Cu-Zr-Ti-Ni systems were prepared by means of copper mold casting. The Cu-based bulk glassy alloys samples were tested by X-ray diffractomer (XRD), differential scanning calorimeter, scanning electron microscopy (SEM), Instron testing machine and Vickers hardness instruments. The result indicated that the prepared Cu-Zr-Ti-Ni alloys were bulk glassy alloys. The temperature interval of supercooled liquid region (${\Delta}T_x$) was about 45.48 to 70.98 K for the Cu-Zr-Ti-Ni alloy. The Vickers hardness was up to 565 HV for the $Cu_{50}Zr_{25}Ti_{15}Ni_{10}$ bulk glassy alloy. The $Cu_{50}Zr_{25}Ti_{15}Ni_{10}$ bulk glassy alloys were annealed in order to obtain nanocrystals. The results showed that the Vickers hardness was raise up to 630 HV from 565 HV. As shown in XRD results, the amorphous alloys changed to nanocrystals, which were $Cu_8Zr_3$, $Cu_3Ti_2$ and CuZr, improved the hardness. The SEM analysis showed that the compression fractured morphology of amorphous alloys was brittle fracture, and the fracture morphology after annealing was ductile fracture. This proved that annealing of amorphous to nanocrystals can improve the plasticity and toughness of amorphous alloys.