• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.241.1-241.1
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• 2013

최근 고집적화된 금속-산화막 반도체 metal oxide semiconductor (MOS) 소자는 크기가 점점 작아짐에 따라 얇은 산화막과 다양한 High-K 물질과 전극에 대하여 연구되고 있다. 이러한 소자의 열적 안정성과 균일성을 얻기 위해 다양한 열처리 방법이 사용되고 있으며, 일반적인 열처리 방법으로는 conventional thermal annealing (CTA)과 rapid thermal annealing (RTA)이 많이 이용되고 있다. 본 실험에서는 microwave radiation에 의한 열처리로 소자의 특성을 개선시킬 수 있다는 사실을 확인하였고, 상대적으로 $100^{\circ}C$ 이하의 저온에서도 공정이 이루어지기 때문에 열에 의한 소자 특성의 열화를 억제할 수 있으며, 또한 짧은 처리 시간 및 공정의 단순화로 비용을 효과적으로 절감할 수 있다. 본 실험에서는 metal-oxide-silicon (MOS) 구조의 capacitor를 제작한 다음, 기존의 CTA나 RTA 처리가 아닌 microwave radiation을 실시하여 MOS capacitor의 전기적인 특성에 미치는 microwave radiation 효과를 평가하였다. 본 실험은 p-type Si 기판에 wet oxidation으로 300 nm 성장된 SiO2 산화막 위에 titanium/aluminium (Ti/Al) 금속 전극을 E-beam evaporator로 형성하여 capacitance-voltage (C-V) 특성 및 current-voltage (I-V) 특성을 평가하였다. 그 결과, microwave 처리를 통해 flat band voltage와 hysteresis 등이 개선되는 것을 확인하였고, microwave radiation 파워와 처리 시간을 최적화하였다. 또한 일반적인 CTA 열처리 소자와 비교하여 유사한 전기적 특성을 확인하였다. 이와 같은 microwave radiation 처리는 매우 낮은 온도에서 공정이 이루어짐에도 불구하고 시료 내에서의 microwave 에너지의 흡수가 CTA나 RTA 공정에서의 열에너지 흡수보다 훨씬 효율적으로 이루어지며, 결과적으로 산화막과 실리콘 기판의 계면 특성 개선에 매우 효과적이라는 것을 나타낸다. 따라서, microwave radiation 처리는 향후 저온공정을 요구하는 nano-scale MOSFET의 제작 및 저온 공정이 필수적인 display 소자 제작의 해결책으로 기대한다.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.409-412
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• 1998

In this paper, we present an $H^2$ controller design of RTP(rapid thermal processing) systems satisfying robust stability and performance using weighted mixed sensitivity minimization. In industrial fields, RTP system is widely used for improving the oxidation and the annealing in semiconductor manufacturing process. The main control factors are temperature control of wafer and uniformity has been solved by PID control method. Because the reference inputs of RTP are ramp, we improve performance of RTP system by the design of $H^2controller$ using the weighted mixed sensitivity function. Also we compare $H^2controller$ with PID controller in terms of performance. An example is proposed to show the validity of proposed method.

• Tribology and Lubricants
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• v.9 no.2
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• pp.16-21
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• 1993

Alkylbenzenes used as the synthetic lubricant base stocks were composed of the mixture of the various kinds of aromatic hydrocarbons. Their compositions have affected on the quality of synthetic alkylbenzene lubricants. Therefore, the rapid and accurate methods for the composit ional analysis are important. In this study, the compositions of the alkylbenzenes (Hv. LAB, FHv. LAB, Hv, BAB, DAB[HF], DAB[$AlCl_3$]) as synthetic base stocks have been investigated according to six average structural parameters(Tar, Nal, Asub, $\bar{n}$, nb, $T\alpha$) in the view of the molecular structures by $^{13}C-NMR$ spectroscopy. The experimental results of the oxidation $\varepsilon$ thermal stability tests have been related to the results of the molecular structural analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.7-8
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• 2006

The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.25.2-25.2
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• 2011

The tungsten oxide wire-like nanostructure is fabricated by deposition and thermal oxidation of tungsten metal on porous single wall carbon nanotubes (SWNTs). The morphology and crystalline quality of materials are investigated by SEM, TEM, XRD and Raman analysis. The results prove that $WO_3$ wire-like nanostructure fabricated on SWNTs show highly porous structures. Exposure of the sensors to NH3 gas in the temperature range of 150~300$^{\circ}C$ resulted in the highest sensitivity at $250^{\circ}C$ with quite rapid response and recovery time. Response time as a function of test concentrations and NH3 gas sensing mechanism is reported and discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1469-1472
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• 2006

We investigated the electrical and optical properties of ZnO:Al thin films as a function of the thermal process conditions. The film was prepared by RF magnetron sputtering followed by annealing in a box furnace in air. An ZnO:Al (98:2) alloy with the purity of 99.99% (3 inch diameter) was used as the target material. The electrical properties of the transparent electrode, exhibited surface oxidation as a result of rapid oxygen absorption with increasing annealing temperature. The processed ZnO:Al films and commercial ITO(indium-tin-oxide) were applied to an OLED stack to investigate the current density and luminescence efficiency. The efficiency of the device using the ZnO:Al electrode was higher than that from the device using the ITO electrode.

• Journal of IKEEE
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• v.22 no.2
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• pp.356-361
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• 2018

We investigated a hydrogen gas sensor which is available in a high temperature atmosphere. The hydrogen sensors were fabricated into a metal-oxide-semiconductor (MOS) structure made of $Pd/Ta_2O_5/SiC$, and the thin tantalum oxide ($Ta_2O_5$) layer was fabricated by rapid thermal oxidation (RTO). In the experiment, we made three types of sensors with different palladium (Pd) patterns to evaluate the effect of Pd electrode on response characteristics. As the result, the response characteristics in capacitance were improved further when the filled area of the Pd electrode became larger.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.399-402
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• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• Electrical & Electronic Materials
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• v.5 no.4
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• pp.385-392
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• 1992

급속열산화방법으로 400-650.deg.C의 온도범위에서 10-600초 동안 n형 InP기판위에 InP자연산화막을 형성하고 산화막의 성장율, 성장기구와 화학적 구성성분 및 전기적 성질등을 조사하였다. InP자연산화막의 두께는 산화시간이 제곱근에 비례하였고 산화온도에 대하여 지수함수적으로 증가하였다. InP자연산화막은 320.deg.C의 온도에서 초기성장이 이루어지고 산소원자들이 InP내부로 확산되는 과정으로 형성되며 산화막 형성에 필요한 활성화에너지는 1.218eV이었다. InP 자연산화마그이 화학적성분은 In$_{2}$)$_{3}$, P$_{2}$O$_{5}$ 및 InPO$_{4}$의 산화물이 혼합하여 구성된다. Au/InP쇼트키다이오드와 InP자연산화막을 게이트절연물로 사용한 MOS 다이오드의 전기적 특성은 다이오드방정식에 따르는 전류-전압특성을 보였다.

• Rapid Communication in Photoscience
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• v.4 no.1
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• pp.19-21
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• 2015

Zeolite is an ideal host material for encapsulating nano-size metal catalyst species because of its defined microporous structure, prominent adsorption/condensation properties, high surface area, chemical/thermal stability, and transparency to light. In this study, $TiO_2$ photocatalyst was incorporated in highly hydrophobic Y zeolite and its photocatalytic activity was examined in the photocatalytic oxidation of olefins under UV-light irradiation using molecular oxygen as an oxygen source. $TiO_2$ nanoparticles incorporated in hydrophobic Y zeolite exhibited a markedly enhanced photocatalytic activity compared with bare $TiO_2$ owing to its excellent affinity toward organic moieties, which facilitates the mass transfer of organic substrates and allows them to efficiently access to the neighboring active $TiO_2$ surface.